Overview
The STF4N62K3 is a high-performance N-channel Power MOSFET developed by STMicroelectronics, utilizing the advanced SuperMESH3™ technology. This device is designed to offer superior dynamic performance, extremely low on-resistance, and high avalanche capability, making it suitable for the most demanding applications. The STF4N62K3 is available in various packages including TO-220FP, I²PAKFP, I²PAK, TO-220, and IPAK, ensuring versatility in design and implementation.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 620 | V |
| Gate-Source Voltage (VGS) | ± 30 | V |
| Drain Current (continuous) at TC = 25 °C (ID) | 3.8 | A |
| Drain Current (continuous) at TC = 100 °C (ID) | 2 | A |
| Pulsed Drain Current (IDM) | 15.2 | A |
| Total Dissipation at TC = 25 °C (PTOT) | 25 / 70 | W |
| Static Drain-Source On Resistance (RDS(on)) | < 2 Ω (typ. 1.7 Ω) | Ω |
| Gate Threshold Voltage (VGS(th)) | 3 - 4.5 | V |
Key Features
- 100% avalanche tested
- Extremely high dv/dt capability
- Gate charge minimized
- Very low intrinsic capacitance
- Improved diode reverse recovery characteristics
- Zener-protected to enhance ESD capability and protect against voltage transients
Applications
The STF4N62K3 is particularly suited for switching applications due to its high performance and robust characteristics. It is ideal for use in power supplies, motor control, and other high-power switching circuits where reliability and efficiency are critical.
Q & A
- What is the maximum drain-source voltage of the STF4N62K3?
The maximum drain-source voltage (VDS) is 620 V.
- What is the typical on-resistance of the STF4N62K3?
The typical static drain-source on resistance (RDS(on)) is 1.7 Ω.
- What are the package options available for the STF4N62K3?
The device is available in TO-220FP, I²PAKFP, I²PAK, TO-220, and IPAK packages.
- What is the maximum continuous drain current at 25 °C?
The maximum continuous drain current (ID) at 25 °C is 3.8 A.
- Does the STF4N62K3 have built-in protection against voltage transients?
Yes, it includes built-in back-to-back Zener diodes to protect against voltage transients and enhance ESD capability.
- What is the typical gate threshold voltage of the STF4N62K3?
The typical gate threshold voltage (VGS(th)) is between 3 V and 4.5 V.
- What are the key features of the SuperMESH3™ technology used in the STF4N62K3?
The SuperMESH3™ technology offers extremely high dv/dt capability, minimized gate charge, very low intrinsic capacitance, and improved diode reverse recovery characteristics.
- Is the STF4N62K3 suitable for high-power switching applications?
Yes, it is highly suitable for high-power switching applications due to its robust characteristics and high performance.
- What is the maximum pulsed drain current of the STF4N62K3?
The maximum pulsed drain current (IDM) is 15.2 A.
- What is the total dissipation at 25 °C for the TO-220FP package?
The total dissipation at 25 °C for the TO-220FP package is 25 W.
