Overview
The STFI4N62K3 is a high-performance N-channel Power MOSFET from STMicroelectronics, utilizing the advanced SuperMESH3™ technology. This device is designed to offer superior dynamic performance, extremely low on-resistance, and high avalanche capability, making it suitable for the most demanding applications. The STFI4N62K3 is available in various packages, including TO-220FP, I²PAKFP, I²PAK, TO-220, and IPAK, ensuring versatility in design and implementation.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 620 | V |
| Gate-Source Voltage (VGS) | ± 30 | V |
| Drain Current (continuous) at TC = 25 °C (ID) | 3.8 | A |
| Drain Current (continuous) at TC = 100 °C (ID) | 2 | A |
| Pulsed Drain Current (IDM) | 15.2 | A |
| Total Dissipation at TC = 25 °C (PTOT) | 25 / 70 | W |
| Static Drain-Source On Resistance (RDS(on)) | < 2 Ω | Ω |
| Gate Threshold Voltage (VGS(th)) | 3 - 4.5 | V |
Key Features
- 100% avalanche tested
- Extremely high dv/dt capability
- Gate charge minimized
- Very low intrinsic capacitance
- Improved diode reverse recovery characteristics
- Zener-protected to enhance ESD capability and absorb voltage transients
Applications
The STFI4N62K3 is primarily used in switching applications due to its high performance and robust characteristics. It is suitable for a wide range of demanding applications where high reliability and efficiency are crucial.
Q & A
- What is the maximum drain-source voltage (VDS) of the STFI4N62K3?
The maximum drain-source voltage (VDS) is 620 V.
- What is the continuous drain current (ID) at 25 °C?
The continuous drain current (ID) at 25 °C is 3.8 A.
- What is the typical on-resistance (RDS(on)) of the STFI4N62K3?
The typical on-resistance (RDS(on)) is less than 2 Ω.
- What are the key features of the STFI4N62K3?
The key features include 100% avalanche testing, high dv/dt capability, minimized gate charge, low intrinsic capacitance, improved diode reverse recovery, and Zener protection.
- In which packages is the STFI4N62K3 available?
The STFI4N62K3 is available in TO-220FP, I²PAKFP, I²PAK, TO-220, and IPAK packages.
- What is the gate-source voltage (VGS) range?
The gate-source voltage (VGS) range is ± 30 V.
- What is the total dissipation at 25 °C (PTOT)?
The total dissipation at 25 °C (PTOT) is 25 W for some packages and up to 70 W for others.
- What are the typical switching times for the STFI4N62K3?
The typical turn-on delay time (td(on)) is 10 ns, rise time (tr) is 9 ns, turn-off delay time (td(off)) is 29 ns, and fall time (tf) is 19 ns.
- What is the gate threshold voltage (VGS(th)) range?
The gate threshold voltage (VGS(th)) range is 3 to 4.5 V.
- What kind of protection does the STFI4N62K3 have?
The STFI4N62K3 is Zener-protected to enhance ESD capability and absorb voltage transients.
