STI4N62K3
  • Share:

STMicroelectronics STI4N62K3

Manufacturer No:
STI4N62K3
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 620V 3.8A I2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STI4N62K3 is a high-performance N-channel power MOSFET developed by STMicroelectronics. It is part of the SuperMESH3™ technology family, which offers enhanced performance and reliability. This MOSFET is designed to operate at high voltages and currents, making it suitable for a variety of power management applications. With its robust design and advanced features, the STI4N62K3 is ideal for applications requiring high efficiency and durability.

Key Specifications

ParameterValue
Voltage Rating (Vds)620 V
On-Resistance (Rds(on))1.7 Ohm (typ.)
Continuous Drain Current (Id)3.8 A (Tc = 25°C)
Power Dissipation (Pd)70 W (Tc = 25°C)
Package TypeI2PAK (Through Hole)
Avalanche Testing100% avalanche tested
Gate ChargeMinimized gate charge
Intrinsic CapacitanceVery low intrinsic capacitance

Key Features

  • Extremely high dv/dt capability, ensuring robust operation in high-frequency applications.
  • Minimized gate charge, reducing switching losses and improving efficiency.
  • Very low intrinsic capacitance, enhancing the device's high-frequency performance.
  • Improved diode reverse recovery characteristics, reducing switching losses and EMI.
  • 100% avalanche tested, ensuring reliability under extreme conditions.
  • Zener-protected, providing additional protection against voltage spikes.

Applications

The STI4N62K3 is well-suited for various power management applications, including:

  • Flyback converters, where its high voltage rating and low on-resistance are beneficial.
  • LED lighting systems, where efficiency and reliability are critical.
  • Power supplies, where high dv/dt capability and low intrinsic capacitance are advantageous.
  • Motor control and drive systems, where robust operation and high current handling are necessary.

Q & A

  1. What is the voltage rating of the STI4N62K3?
    The voltage rating (Vds) of the STI4N62K3 is 620 V.
  2. What is the typical on-resistance of the STI4N62K3?
    The typical on-resistance (Rds(on)) of the STI4N62K3 is 1.7 Ohm.
  3. What is the continuous drain current of the STI4N62K3 at 25°C?
    The continuous drain current (Id) of the STI4N62K3 at 25°C is 3.8 A.
  4. What package type is the STI4N62K3 available in?
    The STI4N62K3 is available in the I2PAK (Through Hole) package type.
  5. Is the STI4N62K3 avalanche tested?
    Yes, the STI4N62K3 is 100% avalanche tested.
  6. What are some key features of the STI4N62K3?
    The STI4N62K3 features extremely high dv/dt capability, minimized gate charge, very low intrinsic capacitance, and improved diode reverse recovery characteristics.
  7. What are some common applications for the STI4N62K3?
    The STI4N62K3 is commonly used in flyback converters, LED lighting systems, power supplies, and motor control and drive systems.
  8. Does the STI4N62K3 have any built-in protection features?
    Yes, the STI4N62K3 is Zener-protected.
  9. What technology does the STI4N62K3 use?
    The STI4N62K3 uses STMicroelectronics' SuperMESH3™ technology.
  10. Where can I find detailed specifications for the STI4N62K3?
    Detailed specifications for the STI4N62K3 can be found in the datasheet available on STMicroelectronics' official website and other electronic component distributors like Mouser, Digi-Key, etc.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):620 V
Current - Continuous Drain (Id) @ 25°C:3.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2Ohm @ 1.9A, 10V
Vgs(th) (Max) @ Id:4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:22 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:550 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):70W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I2PAK
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
0 Remaining View Similar

In Stock

$0.61
794

Please send RFQ , we will respond immediately.

Same Series
STFI4N62K3
STFI4N62K3
MOSFET N CH 620V 3.8A I2PAKFP
STI4N62K3
STI4N62K3
MOSFET N-CH 620V 3.8A I2PAK
STU4N62K3
STU4N62K3
MOSFET N-CH 620V 3.8A IPAK
STP4N62K3
STP4N62K3
MOSFET N-CH 620V 3.8A TO220

Similar Products

Part Number STI4N62K3 STI6N62K3
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 620 V 620 V
Current - Continuous Drain (Id) @ 25°C 3.8A (Tc) 5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 2Ohm @ 1.9A, 10V 1.2Ohm @ 2.8A, 10V
Vgs(th) (Max) @ Id 4.5V @ 50µA 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V 34 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 550 pF @ 50 V 875 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 70W (Tc) 90W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package I2PAK I2PAK
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA

Related Product By Categories

BSS123NH6327XTSA1
BSS123NH6327XTSA1
Infineon Technologies
MOSFET N-CH 100V 190MA SOT23-3
NTNS3193NZT5G
NTNS3193NZT5G
onsemi
MOSFET N-CH 20V 224MA 3XLLGA
STP5NK60Z
STP5NK60Z
STMicroelectronics
MOSFET N-CH 600V 5A TO220AB
STB170NF04
STB170NF04
STMicroelectronics
MOSFET N-CH 40V 80A D2PAK
FDN357N
FDN357N
onsemi
MOSFET N-CH 30V 1.9A SUPERSOT3
FDMS86520L
FDMS86520L
onsemi
MOSFET N CH 60V 13.5A 8PQFN
STD7ANM60N
STD7ANM60N
STMicroelectronics
MOSFET N-CH 600V 5A DPAK
STP45N10F7
STP45N10F7
STMicroelectronics
MOSFET N-CH 100V 45A TO220
BSS138K
BSS138K
onsemi
MOSFET N-CH 50V 220MA SOT23-3
FDD9507L-F085
FDD9507L-F085
onsemi
MOSFET P-CH 40V 100A DPAK
FDN336P-NL
FDN336P-NL
onsemi
MOSFET P-CH 20V 1.3A SUPERSOT3
FDB075N15A_SN00284
FDB075N15A_SN00284
onsemi
MOSFET N-CH 150V 130A D2PAK

Related Product By Brand

STTH802CB-TR
STTH802CB-TR
STMicroelectronics
DIODE ARRAY GP 200V 4A DPAK
ACST1235-8FP
ACST1235-8FP
STMicroelectronics
TRIAC 800V 12A TO-220FPAB
SCTWA90N65G2V
SCTWA90N65G2V
STMicroelectronics
SILICON CARBIDE POWER MOSFET 650
STGP30H60DFB
STGP30H60DFB
STMicroelectronics
TRENCH GATE FIELD-STOP IGBT, HB
STM32L496VET6
STM32L496VET6
STMicroelectronics
IC MCU 32BIT 512KB FLASH 100LQFP
STM8AF6223IPCX
STM8AF6223IPCX
STMicroelectronics
IC MCU 8BIT 4KB FLASH 20TSSOP
STM32H755ZIT6U
STM32H755ZIT6U
STMicroelectronics
IC MCU 32BIT 2MB FLASH 144LQFP
TDA7498LTR
TDA7498LTR
STMicroelectronics
IC AMP D STEREO 80W POWERSSO36
74LCX573MTR
74LCX573MTR
STMicroelectronics
IC LATCH OCTAL D-TYPE 20-SOIC
M24256-BWMN6T
M24256-BWMN6T
STMicroelectronics
IC EEPROM 256KBIT I2C 1MHZ 8SO
VNQ810PTR-E
VNQ810PTR-E
STMicroelectronics
IC PWR DRIVER N-CHANNEL 1:1 28SO
LIS302DL
LIS302DL
STMicroelectronics
ACCEL 2.3-9.2G I2C/SPI 14LGA