STI4N62K3
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STMicroelectronics STI4N62K3

Manufacturer No:
STI4N62K3
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 620V 3.8A I2PAK
Delivery:
Payment:
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Product Introduction

Overview

The STI4N62K3 is a high-performance N-channel power MOSFET developed by STMicroelectronics. It is part of the SuperMESH3™ technology family, which offers enhanced performance and reliability. This MOSFET is designed to operate at high voltages and currents, making it suitable for a variety of power management applications. With its robust design and advanced features, the STI4N62K3 is ideal for applications requiring high efficiency and durability.

Key Specifications

ParameterValue
Voltage Rating (Vds)620 V
On-Resistance (Rds(on))1.7 Ohm (typ.)
Continuous Drain Current (Id)3.8 A (Tc = 25°C)
Power Dissipation (Pd)70 W (Tc = 25°C)
Package TypeI2PAK (Through Hole)
Avalanche Testing100% avalanche tested
Gate ChargeMinimized gate charge
Intrinsic CapacitanceVery low intrinsic capacitance

Key Features

  • Extremely high dv/dt capability, ensuring robust operation in high-frequency applications.
  • Minimized gate charge, reducing switching losses and improving efficiency.
  • Very low intrinsic capacitance, enhancing the device's high-frequency performance.
  • Improved diode reverse recovery characteristics, reducing switching losses and EMI.
  • 100% avalanche tested, ensuring reliability under extreme conditions.
  • Zener-protected, providing additional protection against voltage spikes.

Applications

The STI4N62K3 is well-suited for various power management applications, including:

  • Flyback converters, where its high voltage rating and low on-resistance are beneficial.
  • LED lighting systems, where efficiency and reliability are critical.
  • Power supplies, where high dv/dt capability and low intrinsic capacitance are advantageous.
  • Motor control and drive systems, where robust operation and high current handling are necessary.

Q & A

  1. What is the voltage rating of the STI4N62K3?
    The voltage rating (Vds) of the STI4N62K3 is 620 V.
  2. What is the typical on-resistance of the STI4N62K3?
    The typical on-resistance (Rds(on)) of the STI4N62K3 is 1.7 Ohm.
  3. What is the continuous drain current of the STI4N62K3 at 25°C?
    The continuous drain current (Id) of the STI4N62K3 at 25°C is 3.8 A.
  4. What package type is the STI4N62K3 available in?
    The STI4N62K3 is available in the I2PAK (Through Hole) package type.
  5. Is the STI4N62K3 avalanche tested?
    Yes, the STI4N62K3 is 100% avalanche tested.
  6. What are some key features of the STI4N62K3?
    The STI4N62K3 features extremely high dv/dt capability, minimized gate charge, very low intrinsic capacitance, and improved diode reverse recovery characteristics.
  7. What are some common applications for the STI4N62K3?
    The STI4N62K3 is commonly used in flyback converters, LED lighting systems, power supplies, and motor control and drive systems.
  8. Does the STI4N62K3 have any built-in protection features?
    Yes, the STI4N62K3 is Zener-protected.
  9. What technology does the STI4N62K3 use?
    The STI4N62K3 uses STMicroelectronics' SuperMESH3™ technology.
  10. Where can I find detailed specifications for the STI4N62K3?
    Detailed specifications for the STI4N62K3 can be found in the datasheet available on STMicroelectronics' official website and other electronic component distributors like Mouser, Digi-Key, etc.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):620 V
Current - Continuous Drain (Id) @ 25°C:3.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2Ohm @ 1.9A, 10V
Vgs(th) (Max) @ Id:4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:22 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:550 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):70W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I2PAK
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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Same Series
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STU4N62K3
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Similar Products

Part Number STI4N62K3 STI6N62K3
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 620 V 620 V
Current - Continuous Drain (Id) @ 25°C 3.8A (Tc) 5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 2Ohm @ 1.9A, 10V 1.2Ohm @ 2.8A, 10V
Vgs(th) (Max) @ Id 4.5V @ 50µA 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V 34 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 550 pF @ 50 V 875 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 70W (Tc) 90W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package I2PAK I2PAK
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA

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