STD6N62K3
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STMicroelectronics STD6N62K3

Manufacturer No:
STD6N62K3
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 620V 5.5A DPAK
Delivery:
Payment:
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Product Introduction

Overview

The STD6N62K3 is a high-performance N-channel Power MOSFET from STMicroelectronics, part of the MDmesh K3 series. This device is designed using an optimized vertical structure and ST's well-established strip-based PowerMESH layout. It offers superior dynamic performance, extremely low on-resistance, and high avalanche capability, making it suitable for the most demanding applications.

Key Specifications

ParameterValueUnit
Drain-Source Voltage (VDS)620V
Gate-Source Voltage (VGS)±30V
Drain Current (ID) at TC = 25°C5.5A
Drain Current (ID) at TC = 100°C3.465A
Pulsed Drain Current (IDM)22A
Total Power Dissipation (PTOT) at TC = 25°C90W
On-Resistance (RDS(on))< 1.28Ω
Gate Threshold Voltage (VGS(th))3 - 4.5V
Storage Temperature Range (Tstg)-55 to 150°C
Operating Junction Temperature Range (Tj)-55 to 150°C

Key Features

  • 100% avalanche tested
  • Extremely high dv/dt capability
  • Gate charge minimized
  • Very low intrinsic capacitances
  • Improved diode reverse recovery characteristics
  • Zener-protected gate-source

Applications

The STD6N62K3 is primarily used in switching applications, where its high performance and robust characteristics make it an ideal choice for demanding environments.

Q & A

  1. What is the maximum drain-source voltage of the STD6N62K3?
    The maximum drain-source voltage (VDS) is 620 V.
  2. What is the maximum continuous drain current at 25°C?
    The maximum continuous drain current at 25°C is 5.5 A.
  3. What is the typical on-resistance (RDS(on)) of the STD6N62K3?
    The typical on-resistance (RDS(on)) is less than 1.28 Ω.
  4. What is the gate-source voltage range?
    The gate-source voltage (VGS) range is ±30 V.
  5. What are the key features of the STD6N62K3?
    Key features include 100% avalanche testing, high dv/dt capability, minimized gate charge, low intrinsic capacitances, improved diode reverse recovery, and Zener protection.
  6. What are the typical applications for the STD6N62K3?
    The STD6N62K3 is used in switching applications.
  7. What is the total power dissipation at 25°C?
    The total power dissipation (PTOT) at 25°C is 90 W.
  8. What is the storage temperature range for the STD6N62K3?
    The storage temperature range (Tstg) is -55 to 150°C.
  9. What is the operating junction temperature range?
    The operating junction temperature range (Tj) is -55 to 150°C.
  10. Is the STD6N62K3 Zener-protected?
    Yes, the STD6N62K3 has built-in Zener diodes for gate-source protection.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):620 V
Current - Continuous Drain (Id) @ 25°C:5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.28Ohm @ 2.8A, 10V
Vgs(th) (Max) @ Id:4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:25.7 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:706 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):90W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Same Series
STB6N62K3
STB6N62K3
MOSFET N-CH 620V 5.5A D2PAK

Similar Products

Part Number STD6N62K3 STD3N62K3 STD4N62K3 STD5N62K3 STD6N52K3
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 620 V 620 V 620 V 620 V 525 V
Current - Continuous Drain (Id) @ 25°C 5.5A (Tc) 2.7A (Tc) 3.8A (Tc) 4.2A (Tc) 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 1.28Ohm @ 2.8A, 10V 2.5Ohm @ 1.4A, 10V 1.95Ohm @ 1.9A, 10V 1.6Ohm @ 2.1A, 10V 1.2Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 50µA 4.5V @ 50µA 4.5V @ 50µA 4.5V @ 50µA 4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 25.7 nC @ 10 V 13 nC @ 10 V 14 nC @ 10 V 26 nC @ 10 V -
Vgs (Max) ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 706 pF @ 50 V 385 pF @ 25 V 450 pF @ 50 V 680 pF @ 50 V -
FET Feature - - - - -
Power Dissipation (Max) 90W (Tc) 45W (Tc) 70W (Tc) 70W (Tc) 70W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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