STD6N62K3
  • Share:

STMicroelectronics STD6N62K3

Manufacturer No:
STD6N62K3
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 620V 5.5A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STD6N62K3 is a high-performance N-channel Power MOSFET from STMicroelectronics, part of the MDmesh K3 series. This device is designed using an optimized vertical structure and ST's well-established strip-based PowerMESH layout. It offers superior dynamic performance, extremely low on-resistance, and high avalanche capability, making it suitable for the most demanding applications.

Key Specifications

ParameterValueUnit
Drain-Source Voltage (VDS)620V
Gate-Source Voltage (VGS)±30V
Drain Current (ID) at TC = 25°C5.5A
Drain Current (ID) at TC = 100°C3.465A
Pulsed Drain Current (IDM)22A
Total Power Dissipation (PTOT) at TC = 25°C90W
On-Resistance (RDS(on))< 1.28Ω
Gate Threshold Voltage (VGS(th))3 - 4.5V
Storage Temperature Range (Tstg)-55 to 150°C
Operating Junction Temperature Range (Tj)-55 to 150°C

Key Features

  • 100% avalanche tested
  • Extremely high dv/dt capability
  • Gate charge minimized
  • Very low intrinsic capacitances
  • Improved diode reverse recovery characteristics
  • Zener-protected gate-source

Applications

The STD6N62K3 is primarily used in switching applications, where its high performance and robust characteristics make it an ideal choice for demanding environments.

Q & A

  1. What is the maximum drain-source voltage of the STD6N62K3?
    The maximum drain-source voltage (VDS) is 620 V.
  2. What is the maximum continuous drain current at 25°C?
    The maximum continuous drain current at 25°C is 5.5 A.
  3. What is the typical on-resistance (RDS(on)) of the STD6N62K3?
    The typical on-resistance (RDS(on)) is less than 1.28 Ω.
  4. What is the gate-source voltage range?
    The gate-source voltage (VGS) range is ±30 V.
  5. What are the key features of the STD6N62K3?
    Key features include 100% avalanche testing, high dv/dt capability, minimized gate charge, low intrinsic capacitances, improved diode reverse recovery, and Zener protection.
  6. What are the typical applications for the STD6N62K3?
    The STD6N62K3 is used in switching applications.
  7. What is the total power dissipation at 25°C?
    The total power dissipation (PTOT) at 25°C is 90 W.
  8. What is the storage temperature range for the STD6N62K3?
    The storage temperature range (Tstg) is -55 to 150°C.
  9. What is the operating junction temperature range?
    The operating junction temperature range (Tj) is -55 to 150°C.
  10. Is the STD6N62K3 Zener-protected?
    Yes, the STD6N62K3 has built-in Zener diodes for gate-source protection.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):620 V
Current - Continuous Drain (Id) @ 25°C:5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.28Ohm @ 2.8A, 10V
Vgs(th) (Max) @ Id:4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:25.7 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:706 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):90W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

$2.08
61

Please send RFQ , we will respond immediately.

Same Series
STB6N62K3
STB6N62K3
MOSFET N-CH 620V 5.5A D2PAK

Similar Products

Part Number STD6N62K3 STD3N62K3 STD4N62K3 STD5N62K3 STD6N52K3
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 620 V 620 V 620 V 620 V 525 V
Current - Continuous Drain (Id) @ 25°C 5.5A (Tc) 2.7A (Tc) 3.8A (Tc) 4.2A (Tc) 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 1.28Ohm @ 2.8A, 10V 2.5Ohm @ 1.4A, 10V 1.95Ohm @ 1.9A, 10V 1.6Ohm @ 2.1A, 10V 1.2Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 50µA 4.5V @ 50µA 4.5V @ 50µA 4.5V @ 50µA 4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 25.7 nC @ 10 V 13 nC @ 10 V 14 nC @ 10 V 26 nC @ 10 V -
Vgs (Max) ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 706 pF @ 50 V 385 pF @ 25 V 450 pF @ 50 V 680 pF @ 50 V -
FET Feature - - - - -
Power Dissipation (Max) 90W (Tc) 45W (Tc) 70W (Tc) 70W (Tc) 70W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

FDMS86255ET150
FDMS86255ET150
onsemi
MOSFET N-CH 150V 10A/63A POWER56
FDP032N08B-F102
FDP032N08B-F102
onsemi
MOSFET N-CH 80V 120A TO220-3
STWA88N65M5
STWA88N65M5
STMicroelectronics
MOSFET N-CH 650V 84A TO247
FDMC86160ET100
FDMC86160ET100
onsemi
MOSFET N-CH 100V 9A/43A POWER33
IRF3710PBF
IRF3710PBF
Infineon Technologies
MOSFET N-CH 100V 57A TO220AB
STP3NK90Z
STP3NK90Z
STMicroelectronics
MOSFET N-CH 900V 3A TO220AB
STH275N8F7-2AG
STH275N8F7-2AG
STMicroelectronics
MOSFET N-CH 80V 180A H2PAK-2
STD5NM60T4
STD5NM60T4
STMicroelectronics
MOSFET N-CH 600V 5A DPAK
2N7002AQ-13
2N7002AQ-13
Diodes Incorporated
MOSFET N-CH 60V 180MA SOT23
STW88N65M5-4
STW88N65M5-4
STMicroelectronics
MOSFET N-CH 650V 84A TO247-4L
PMV65XP/MIR
PMV65XP/MIR
Nexperia USA Inc.
MOSFET P-CH 20V 2.8A TO236AB
BSS138W-7-F-79
BSS138W-7-F-79
Diodes Incorporated
DIODE

Related Product By Brand

STPS0560Z
STPS0560Z
STMicroelectronics
DIODE SCHOTTKY 60V 500MA SOD123
STD6N80K5
STD6N80K5
STMicroelectronics
MOSFET N-CH 800V 4.5A DPAK
STF28NM50N
STF28NM50N
STMicroelectronics
MOSFET N-CH 500V 21A TO220FP
STM32L151VCH6
STM32L151VCH6
STMicroelectronics
IC MCU 32BIT 256KB FLSH 100UFBGA
STM32F427VGT7
STM32F427VGT7
STMicroelectronics
IC MCU 32BIT 1MB FLASH 100LQFP
STM32H755ZIT6U
STM32H755ZIT6U
STMicroelectronics
IC MCU 32BIT 2MB FLASH 144LQFP
LM293N
LM293N
STMicroelectronics
IC COMPARATOR LP DUAL 8-DIP
TD352IDT
TD352IDT
STMicroelectronics
IC GATE DRVR HIGH-SIDE 8SO
VN750SM
VN750SM
STMicroelectronics
IC PWR DRIVER N-CHANNEL 1:1 8SO
VNQ6004SA-E
VNQ6004SA-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO36
L6599ATDTR
L6599ATDTR
STMicroelectronics
IC RESONANT CONVRTR CTRLR 16SOIC
LM217MDT-TR
LM217MDT-TR
STMicroelectronics
IC REG LINEAR POS ADJ 500MA DPAK