STD6N62K3
  • Share:

STMicroelectronics STD6N62K3

Manufacturer No:
STD6N62K3
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 620V 5.5A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STD6N62K3 is a high-performance N-channel Power MOSFET from STMicroelectronics, part of the MDmesh K3 series. This device is designed using an optimized vertical structure and ST's well-established strip-based PowerMESH layout. It offers superior dynamic performance, extremely low on-resistance, and high avalanche capability, making it suitable for the most demanding applications.

Key Specifications

ParameterValueUnit
Drain-Source Voltage (VDS)620V
Gate-Source Voltage (VGS)±30V
Drain Current (ID) at TC = 25°C5.5A
Drain Current (ID) at TC = 100°C3.465A
Pulsed Drain Current (IDM)22A
Total Power Dissipation (PTOT) at TC = 25°C90W
On-Resistance (RDS(on))< 1.28Ω
Gate Threshold Voltage (VGS(th))3 - 4.5V
Storage Temperature Range (Tstg)-55 to 150°C
Operating Junction Temperature Range (Tj)-55 to 150°C

Key Features

  • 100% avalanche tested
  • Extremely high dv/dt capability
  • Gate charge minimized
  • Very low intrinsic capacitances
  • Improved diode reverse recovery characteristics
  • Zener-protected gate-source

Applications

The STD6N62K3 is primarily used in switching applications, where its high performance and robust characteristics make it an ideal choice for demanding environments.

Q & A

  1. What is the maximum drain-source voltage of the STD6N62K3?
    The maximum drain-source voltage (VDS) is 620 V.
  2. What is the maximum continuous drain current at 25°C?
    The maximum continuous drain current at 25°C is 5.5 A.
  3. What is the typical on-resistance (RDS(on)) of the STD6N62K3?
    The typical on-resistance (RDS(on)) is less than 1.28 Ω.
  4. What is the gate-source voltage range?
    The gate-source voltage (VGS) range is ±30 V.
  5. What are the key features of the STD6N62K3?
    Key features include 100% avalanche testing, high dv/dt capability, minimized gate charge, low intrinsic capacitances, improved diode reverse recovery, and Zener protection.
  6. What are the typical applications for the STD6N62K3?
    The STD6N62K3 is used in switching applications.
  7. What is the total power dissipation at 25°C?
    The total power dissipation (PTOT) at 25°C is 90 W.
  8. What is the storage temperature range for the STD6N62K3?
    The storage temperature range (Tstg) is -55 to 150°C.
  9. What is the operating junction temperature range?
    The operating junction temperature range (Tj) is -55 to 150°C.
  10. Is the STD6N62K3 Zener-protected?
    Yes, the STD6N62K3 has built-in Zener diodes for gate-source protection.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):620 V
Current - Continuous Drain (Id) @ 25°C:5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.28Ohm @ 2.8A, 10V
Vgs(th) (Max) @ Id:4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:25.7 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:706 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):90W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

$2.08
61

Please send RFQ , we will respond immediately.

Same Series
STB6N62K3
STB6N62K3
MOSFET N-CH 620V 5.5A D2PAK

Similar Products

Part Number STD6N62K3 STD3N62K3 STD4N62K3 STD5N62K3 STD6N52K3
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 620 V 620 V 620 V 620 V 525 V
Current - Continuous Drain (Id) @ 25°C 5.5A (Tc) 2.7A (Tc) 3.8A (Tc) 4.2A (Tc) 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 1.28Ohm @ 2.8A, 10V 2.5Ohm @ 1.4A, 10V 1.95Ohm @ 1.9A, 10V 1.6Ohm @ 2.1A, 10V 1.2Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 50µA 4.5V @ 50µA 4.5V @ 50µA 4.5V @ 50µA 4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 25.7 nC @ 10 V 13 nC @ 10 V 14 nC @ 10 V 26 nC @ 10 V -
Vgs (Max) ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 706 pF @ 50 V 385 pF @ 25 V 450 pF @ 50 V 680 pF @ 50 V -
FET Feature - - - - -
Power Dissipation (Max) 90W (Tc) 45W (Tc) 70W (Tc) 70W (Tc) 70W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

FQD2N90TM
FQD2N90TM
onsemi
MOSFET N-CH 900V 1.7A DPAK
STB36NM60ND
STB36NM60ND
STMicroelectronics
MOSFET N-CH 600V 29A D2PAK
FDB38N30U
FDB38N30U
onsemi
MOSFET N CH 300V 38A D2PAK
FDBL0150N80
FDBL0150N80
onsemi
MOSFET N-CH 80V 300A 8HPSOF
STWA88N65M5
STWA88N65M5
STMicroelectronics
MOSFET N-CH 650V 84A TO247
FQD7P06TM
FQD7P06TM
onsemi
MOSFET P-CH 60V 5.4A DPAK
STD5N80K5
STD5N80K5
STMicroelectronics
MOSFET N-CH 800V 4A DPAK
STV270N4F3
STV270N4F3
STMicroelectronics
MOSFET N-CH 40V 270A 10POWERSO
STU10N60M2
STU10N60M2
STMicroelectronics
MOSFET N-CH 600V 7.5A IPAK
BSH112,235
BSH112,235
NXP USA Inc.
MOSFET N-CH 60V 300MA TO236AB
STP80PF55
STP80PF55
STMicroelectronics
MOSFET P-CH 55V 80A TO220AB
MCH3375-TL-W-Z
MCH3375-TL-W-Z
onsemi
MOSFET P-CH 30V 1.6A SC-70FL

Related Product By Brand

STPS1L60MF
STPS1L60MF
STMicroelectronics
DIODE SCHOTTKY 60V 1A DO222AA
STP80NF03L-04
STP80NF03L-04
STMicroelectronics
MOSFET N-CH 30V 80A TO220AB
TDA7718N
TDA7718N
STMicroelectronics
IC AUDIO SIGNAL PROCESSR 28TSSOP
STHVDAC-303F6
STHVDAC-303F6
STMicroelectronics
IC DAC 8BIT 16FLIPCHIP
STM32F407VGT6TR
STM32F407VGT6TR
STMicroelectronics
IC MCU 32BIT 1MB FLASH 100LQFP
M27C4002-80C6
M27C4002-80C6
STMicroelectronics
IC EPROM 4MBIT PARALLEL 44PLCC
VNN3NV04PTR-E
VNN3NV04PTR-E
STMicroelectronics
IC PWR DRIVER N-CHAN 1:1 SOT223
VB325SP13TR
VB325SP13TR
STMicroelectronics
IC PWR DRVR BIPOLAR 1:1 PWRSO10
VNQ6040S-E
VNQ6040S-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO36
L5050STR
L5050STR
STMicroelectronics
IC REG LINEAR 5V 50MA 8SO
LD1117AS25TR
LD1117AS25TR
STMicroelectronics
IC REG LINEAR 2.5V 1A SOT223
LNBH23LQTR
LNBH23LQTR
STMicroelectronics
IC REG CONV SAT TV 1OUT 32QFN