STD5N62K3
  • Share:

STMicroelectronics STD5N62K3

Manufacturer No:
STD5N62K3
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 620V 4.2A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STD5N62K3 is a high-performance N-channel Power MOSFET from STMicroelectronics, part of their MDmesh™ K3 series. This device is designed with an optimized vertical structure, enhancing its dynamic performance and avalanche capability. It is suitable for the most demanding applications due to its extremely low on-resistance and superior dynamic characteristics.

Key Specifications

Parameter Value Unit
Drain to Source Breakdown Voltage (VDS) 620 V
Maximum On-Resistance (RDS(on)) 1.6 Ω (max), 1.28 Ω (typ) Ω
Continuous Drain Current (ID) 4.2 A A
Package DPAK -
Avalanche Current (IAR) 4.2 A A
Single Pulse Avalanche Energy (EAS) 120 mJ mJ
Thermal Resistance Junction-Case (Rthj-case) 1.79 °C/W °C/W
Thermal Resistance Junction-Ambient (Rthj-amb) 62.5 °C/W °C/W

Key Features

  • 100% avalanche tested
  • Extremely high dv/dt capability
  • Very low intrinsic capacitance
  • Improved diode reverse recovery characteristics
  • Zener-protected gate-source diode for enhanced ESD performance

Applications

The STD5N62K3 is primarily used in switching applications due to its high performance and robust characteristics. These include but are not limited to:

  • Power supplies and converters
  • Motor control and drives
  • High-frequency switching circuits
  • Industrial and automotive systems requiring high reliability and performance

Q & A

  1. What is the maximum drain to source breakdown voltage of the STD5N62K3?

    The maximum drain to source breakdown voltage is 620 V.

  2. What is the typical on-resistance of the STD5N62K3?

    The typical on-resistance is 1.28 Ω.

  3. What is the continuous drain current rating of the STD5N62K3?

    The continuous drain current rating is 4.2 A.

  4. In which package is the STD5N62K3 available?

    The STD5N62K3 is available in the DPAK package, among others (TO-220FP, TO-220, IPAK).

  5. What is the avalanche current rating of the STD5N62K3?

    The avalanche current rating is 4.2 A.

  6. What is the thermal resistance junction-case for the DPAK package?

    The thermal resistance junction-case for the DPAK package is 1.79 °C/W.

  7. Does the STD5N62K3 have built-in protection features?

    Yes, it has built-in Zener-protected gate-source diodes for enhanced ESD performance.

  8. What are the key applications of the STD5N62K3?

    The key applications include switching applications, power supplies, motor control, and high-frequency switching circuits.

  9. What is the single pulse avalanche energy of the STD5N62K3?

    The single pulse avalanche energy is 120 mJ.

  10. How does the STD5N62K3 improve diode reverse recovery characteristics?

    The device features improved diode reverse recovery characteristics, which enhance its performance in inductive load switching applications.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):620 V
Current - Continuous Drain (Id) @ 25°C:4.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.6Ohm @ 2.1A, 10V
Vgs(th) (Max) @ Id:4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:26 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:680 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):70W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

$0.89
989

Please send RFQ , we will respond immediately.

Same Series
STF5N62K3
STF5N62K3
MOSFET N-CH 620V 4.2A TO220FP
STP5N62K3
STP5N62K3
MOSFET N-CH 620V 4.2A TO220AB
STB5N62K3
STB5N62K3
MOSFET N-CH 620V 4.2A D2PAK
STU5N62K3
STU5N62K3
MOSFET N-CH 620V 4.2A IPAK

Similar Products

Part Number STD5N62K3 STD6N62K3 STD2N62K3 STD3N62K3 STD4N62K3 STD5N52K3
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 620 V 620 V 620 V 620 V 620 V 525 V
Current - Continuous Drain (Id) @ 25°C 4.2A (Tc) 5.5A (Tc) 2.2A (Tc) 2.7A (Tc) 3.8A (Tc) 4.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 1.6Ohm @ 2.1A, 10V 1.28Ohm @ 2.8A, 10V 3.6Ohm @ 1.1A, 10V 2.5Ohm @ 1.4A, 10V 1.95Ohm @ 1.9A, 10V 1.5Ohm @ 2.2A, 10V
Vgs(th) (Max) @ Id 4.5V @ 50µA 4.5V @ 50µA 4.5V @ 50µA 4.5V @ 50µA 4.5V @ 50µA 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 26 nC @ 10 V 25.7 nC @ 10 V 15 nC @ 10 V 13 nC @ 10 V 14 nC @ 10 V 17 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 680 pF @ 50 V 706 pF @ 50 V 340 pF @ 50 V 385 pF @ 25 V 450 pF @ 50 V 545 pF @ 100 V
FET Feature - - - - - -
Power Dissipation (Max) 70W (Tc) 90W (Tc) 45W (Tc) 45W (Tc) 70W (Tc) 70W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK DPAK DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

STD26P3LLH6
STD26P3LLH6
STMicroelectronics
MOSFET P-CH 30V 12A DPAK
BSS84KW-TP
BSS84KW-TP
Micro Commercial Co
MOSFET P-CH 50V 130MA SOT323
AO4407A
AO4407A
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 12A 8SOIC
CSD17575Q3
CSD17575Q3
Texas Instruments
MOSFET N-CH 30V 60A 8VSON
STD3N62K3
STD3N62K3
STMicroelectronics
MOSFET N-CH 620V 2.7A DPAK
STD36P4LLF6
STD36P4LLF6
STMicroelectronics
MOSFET P-CH 40V 36A DPAK
PMV50XP215
PMV50XP215
NXP USA Inc.
P-CHANNEL MOSFET
STS12NH3LL
STS12NH3LL
STMicroelectronics
MOSFET N-CH 30V 12A 8SO
NTTFS4939NTAG
NTTFS4939NTAG
onsemi
MOSFET N-CH 30V 8.9A/52A 8WDFN
STW6N120K3
STW6N120K3
STMicroelectronics
MOSFET N-CH 1200V 6A TO247
NVD5490NLT4G
NVD5490NLT4G
onsemi
MOSFET N-CH 60V 5A/17A DPAK-3
FDMS86101E
FDMS86101E
onsemi
MOSFET N-CH 100V 12.4A/60A 8PQFN

Related Product By Brand

STTH802CB-TR
STTH802CB-TR
STMicroelectronics
DIODE ARRAY GP 200V 4A DPAK
STL120N4F6AG
STL120N4F6AG
STMicroelectronics
MOSFET N-CH 40V 55A POWERFLAT
STM32F205RBT6TR
STM32F205RBT6TR
STMicroelectronics
IC MCU 32BIT 128KB FLASH 64LQFP
STM32H7B3IIT6Q
STM32H7B3IIT6Q
STMicroelectronics
IC MCU 32BIT 2MB FLASH 176LQFP
LM293PT
LM293PT
STMicroelectronics
IC VOLT COMPARATOR DUAL 8-TSSOP
TS881ILT
TS881ILT
STMicroelectronics
IC COMPARATOR R-R 1.1V SOT-23-5
M24C04-FMC5TG
M24C04-FMC5TG
STMicroelectronics
IC EEPROM 4KBIT I2C 8UFDFPN
M27C1001-12B1
M27C1001-12B1
STMicroelectronics
IC EPROM 1MBIT PARALLEL 32DIP
VNQ6040S-E
VNQ6040S-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO36
L9779WDM
L9779WDM
STMicroelectronics
HI-QUAD 64 14X14 POW
LF90CPT-TR
LF90CPT-TR
STMicroelectronics
IC REG LINEAR 9V 500MA PPAK
LSM6DS3HTR
LSM6DS3HTR
STMicroelectronics
IMU ACCEL/GYRO/TEMP I2C/SPI LGA