STD5N62K3
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STMicroelectronics STD5N62K3

Manufacturer No:
STD5N62K3
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 620V 4.2A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STD5N62K3 is a high-performance N-channel Power MOSFET from STMicroelectronics, part of their MDmesh™ K3 series. This device is designed with an optimized vertical structure, enhancing its dynamic performance and avalanche capability. It is suitable for the most demanding applications due to its extremely low on-resistance and superior dynamic characteristics.

Key Specifications

Parameter Value Unit
Drain to Source Breakdown Voltage (VDS) 620 V
Maximum On-Resistance (RDS(on)) 1.6 Ω (max), 1.28 Ω (typ) Ω
Continuous Drain Current (ID) 4.2 A A
Package DPAK -
Avalanche Current (IAR) 4.2 A A
Single Pulse Avalanche Energy (EAS) 120 mJ mJ
Thermal Resistance Junction-Case (Rthj-case) 1.79 °C/W °C/W
Thermal Resistance Junction-Ambient (Rthj-amb) 62.5 °C/W °C/W

Key Features

  • 100% avalanche tested
  • Extremely high dv/dt capability
  • Very low intrinsic capacitance
  • Improved diode reverse recovery characteristics
  • Zener-protected gate-source diode for enhanced ESD performance

Applications

The STD5N62K3 is primarily used in switching applications due to its high performance and robust characteristics. These include but are not limited to:

  • Power supplies and converters
  • Motor control and drives
  • High-frequency switching circuits
  • Industrial and automotive systems requiring high reliability and performance

Q & A

  1. What is the maximum drain to source breakdown voltage of the STD5N62K3?

    The maximum drain to source breakdown voltage is 620 V.

  2. What is the typical on-resistance of the STD5N62K3?

    The typical on-resistance is 1.28 Ω.

  3. What is the continuous drain current rating of the STD5N62K3?

    The continuous drain current rating is 4.2 A.

  4. In which package is the STD5N62K3 available?

    The STD5N62K3 is available in the DPAK package, among others (TO-220FP, TO-220, IPAK).

  5. What is the avalanche current rating of the STD5N62K3?

    The avalanche current rating is 4.2 A.

  6. What is the thermal resistance junction-case for the DPAK package?

    The thermal resistance junction-case for the DPAK package is 1.79 °C/W.

  7. Does the STD5N62K3 have built-in protection features?

    Yes, it has built-in Zener-protected gate-source diodes for enhanced ESD performance.

  8. What are the key applications of the STD5N62K3?

    The key applications include switching applications, power supplies, motor control, and high-frequency switching circuits.

  9. What is the single pulse avalanche energy of the STD5N62K3?

    The single pulse avalanche energy is 120 mJ.

  10. How does the STD5N62K3 improve diode reverse recovery characteristics?

    The device features improved diode reverse recovery characteristics, which enhance its performance in inductive load switching applications.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):620 V
Current - Continuous Drain (Id) @ 25°C:4.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.6Ohm @ 2.1A, 10V
Vgs(th) (Max) @ Id:4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:26 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:680 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):70W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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STF5N62K3
STF5N62K3
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STP5N62K3
STP5N62K3
MOSFET N-CH 620V 4.2A TO220AB
STB5N62K3
STB5N62K3
MOSFET N-CH 620V 4.2A D2PAK
STU5N62K3
STU5N62K3
MOSFET N-CH 620V 4.2A IPAK

Similar Products

Part Number STD5N62K3 STD6N62K3 STD2N62K3 STD3N62K3 STD4N62K3 STD5N52K3
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 620 V 620 V 620 V 620 V 620 V 525 V
Current - Continuous Drain (Id) @ 25°C 4.2A (Tc) 5.5A (Tc) 2.2A (Tc) 2.7A (Tc) 3.8A (Tc) 4.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 1.6Ohm @ 2.1A, 10V 1.28Ohm @ 2.8A, 10V 3.6Ohm @ 1.1A, 10V 2.5Ohm @ 1.4A, 10V 1.95Ohm @ 1.9A, 10V 1.5Ohm @ 2.2A, 10V
Vgs(th) (Max) @ Id 4.5V @ 50µA 4.5V @ 50µA 4.5V @ 50µA 4.5V @ 50µA 4.5V @ 50µA 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 26 nC @ 10 V 25.7 nC @ 10 V 15 nC @ 10 V 13 nC @ 10 V 14 nC @ 10 V 17 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 680 pF @ 50 V 706 pF @ 50 V 340 pF @ 50 V 385 pF @ 25 V 450 pF @ 50 V 545 pF @ 100 V
FET Feature - - - - - -
Power Dissipation (Max) 70W (Tc) 90W (Tc) 45W (Tc) 45W (Tc) 70W (Tc) 70W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK DPAK DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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