STD2N62K3
  • Share:

STMicroelectronics STD2N62K3

Manufacturer No:
STD2N62K3
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 620V 2.2A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STD2N62K3 is a high-performance N-channel Power MOSFET developed by STMicroelectronics. It is part of the MDmesh™ K3 series, which combines improved MDmesh™ technology with a new optimized vertical structure. This device is characterized by its extremely low on-resistance, superior dynamic performance, and high avalanche capability, making it suitable for the most demanding applications.

Key Specifications

Parameter Value Unit
Order Code STD2N62K3 -
Maximum Drain-Source Voltage (Vds) 620 V
Maximum Drain Current (Id) 2.2 A
Maximum Drain-Source On-State Resistance (Rds(on)) 3.6 Ω
Maximum Gate-Source Voltage (Vgs) ±30 V
Maximum Junction Temperature (Tj) 150 °C
Maximum Power Dissipation (Pd) 45 W
Package DPAK (TO-252) -
Lead Free Status / RoHS Status Lead free / RoHS Compliant -

Key Features

  • 100% avalanche tested
  • Extremely high dv/dt capability
  • Very low intrinsic capacitance
  • Improved diode reverse recovery characteristics
  • Zener-protected for enhanced ESD performance

Applications

The STD2N62K3 is designed for various high-performance applications, including:

  • Switching applications
  • Industrial and automotive systems
  • Power conversion applications such as SMPS, data centers, and solar microinverters

Q & A

  1. What is the maximum drain-source voltage of the STD2N62K3?

    The maximum drain-source voltage (Vds) is 620 V.

  2. What is the maximum drain current of the STD2N62K3?

    The maximum drain current (Id) is 2.2 A.

  3. What is the typical on-resistance of the STD2N62K3?

    The typical on-resistance (Rds(on)) is 3.6 Ω.

  4. What is the maximum gate-source voltage of the STD2N62K3?

    The maximum gate-source voltage (Vgs) is ±30 V.

  5. What is the maximum junction temperature of the STD2N62K3?

    The maximum junction temperature (Tj) is 150 °C.

  6. What package types are available for the STD2N62K3?

    The STD2N62K3 is available in DPAK (TO-252) package.

  7. Is the STD2N62K3 RoHS compliant?
  8. What are some key features of the STD2N62K3?
  9. What are typical applications for the STD2N62K3?
  10. Where can I find EDA symbols, footprints, and 3D models for the STD2N62K3?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):620 V
Current - Continuous Drain (Id) @ 25°C:2.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3.6Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id:4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:340 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):45W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

$1.61
117

Please send RFQ , we will respond immediately.

Same Series
STP2N62K3
STP2N62K3
MOSFET N-CH 620V 2.2A TO220
STB2N62K3
STB2N62K3
MOSFET N-CH 620V 2.2A TO263
STF2N62K3
STF2N62K3
MOSFET N-CH 620V 2.2A TO220FP
STU2N62K3
STU2N62K3
MOSFET N-CH 620V 2.2A IPAK

Similar Products

Part Number STD2N62K3 STD4N62K3 STD3N62K3 STD5N62K3
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 620 V 620 V 620 V 620 V
Current - Continuous Drain (Id) @ 25°C 2.2A (Tc) 3.8A (Tc) 2.7A (Tc) 4.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 3.6Ohm @ 1.1A, 10V 1.95Ohm @ 1.9A, 10V 2.5Ohm @ 1.4A, 10V 1.6Ohm @ 2.1A, 10V
Vgs(th) (Max) @ Id 4.5V @ 50µA 4.5V @ 50µA 4.5V @ 50µA 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V 14 nC @ 10 V 13 nC @ 10 V 26 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 340 pF @ 50 V 450 pF @ 50 V 385 pF @ 25 V 680 pF @ 50 V
FET Feature - - - -
Power Dissipation (Max) 45W (Tc) 70W (Tc) 45W (Tc) 70W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

BSS123NH6327XTSA1
BSS123NH6327XTSA1
Infineon Technologies
MOSFET N-CH 100V 190MA SOT23-3
FDB38N30U
FDB38N30U
onsemi
MOSFET N CH 300V 38A D2PAK
CSD18531Q5AT
CSD18531Q5AT
Texas Instruments
MOSFET N-CH 60V 100A 8VSON
STWA88N65M5
STWA88N65M5
STMicroelectronics
MOSFET N-CH 650V 84A TO247
FDMS86520L
FDMS86520L
onsemi
MOSFET N CH 60V 13.5A 8PQFN
STP3NK90Z
STP3NK90Z
STMicroelectronics
MOSFET N-CH 900V 3A TO220AB
STF13N65M2
STF13N65M2
STMicroelectronics
MOSFET N-CH 650V 10A TO220FP
STL220N6F7
STL220N6F7
STMicroelectronics
MOSFET N-CH 60V 120A POWERFLAT
STL36N55M5
STL36N55M5
STMicroelectronics
MOSFET N-CH 550V 22.5A 4PWRFLAT
PMCXB900UE147
PMCXB900UE147
NXP USA Inc.
SMALL SIGNAL FET
NTTFS4939NTAG
NTTFS4939NTAG
onsemi
MOSFET N-CH 30V 8.9A/52A 8WDFN
FDMS86101E
FDMS86101E
onsemi
MOSFET N-CH 100V 12.4A/60A 8PQFN

Related Product By Brand

SM6T24CAY
SM6T24CAY
STMicroelectronics
TVS DIODE 20.5VWM 42.8VC SMB
X0202MN 5BA4
X0202MN 5BA4
STMicroelectronics
SCR 600V 1.25A SOT223
BTA08-600CWRG
BTA08-600CWRG
STMicroelectronics
TRIAC ALTERNISTOR 600V TO220AB
STH410N4F7-6AG
STH410N4F7-6AG
STMicroelectronics
MOSFET N-CH 40V 200A H2PAK-6
STA333BWJ13TR
STA333BWJ13TR
STMicroelectronics
IC FULLY INTEG PROC POWERSSO-36
STM32L433RCI6
STM32L433RCI6
STMicroelectronics
IC MCU 32BIT 256KB FLASH 64UFBGA
STM32F100VDT6B
STM32F100VDT6B
STMicroelectronics
IC MCU 32BIT 384KB FLASH 100LQFP
STM32F427VGT7
STM32F427VGT7
STMicroelectronics
IC MCU 32BIT 1MB FLASH 100LQFP
M27C4001-12F6
M27C4001-12F6
STMicroelectronics
IC EPROM 4MBIT PARALLEL 32CDIP
L6375S
L6375S
STMicroelectronics
IC PWR SWITCH N-CHAN 1:1 8SOIC
VNQ810PTR-E
VNQ810PTR-E
STMicroelectronics
IC PWR DRIVER N-CHANNEL 1:1 28SO
L4995KTR
L4995KTR
STMicroelectronics
IC REG LIN 5V 500MA POWERSSO-24