STW40N95DK5
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STMicroelectronics STW40N95DK5

Manufacturer No:
STW40N95DK5
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CHANNEL 950V 38A TO247
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Product Introduction

Overview

The STW40N95DK5 is a high-performance N-channel power MOSFET developed by STMicroelectronics. This device is part of the MDmesh DK5 series, known for its advanced technology and superior electrical characteristics. The STW40N95DK5 is designed to operate at high voltages and currents, making it suitable for a wide range of power management and conversion applications.

Key Specifications

Parameter Value
VDS (Drain-Source Voltage) 950 V
RDS(on) (On-Resistance) 0.120 Ω (typical)
ID (Drain Current) 38 A
Ptot (Total Power Dissipation) Dependent on package and thermal conditions
TJ (Junction Temperature) -55°C to 150°C
Package TO-247
Gate Charge (Qg) Low gate charge, input capacitance, and resistance
Avalanche Capability 100% avalanche tested

Key Features

  • Fast-recovery body diode for improved efficiency in high-frequency applications.
  • Best RDS(on) x area ratio, offering low on-resistance and high current handling.
  • Low gate charge, input capacitance, and resistance, which enhance switching performance.
  • 100% avalanche tested to ensure robustness against transient conditions.
  • Extremely high dv/dt capability, making it suitable for high-speed switching applications.

Applications

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • High-frequency switching applications.
  • Industrial and automotive power management systems.
  • Renewable energy systems, such as solar and wind power inverters.

Q & A

  1. What is the maximum drain-source voltage of the STW40N95DK5?

    The maximum drain-source voltage (VDS) is 950 V.

  2. What is the typical on-resistance (RDS(on)) of the STW40N95DK5?

    The typical on-resistance is 0.120 Ω.

  3. What is the maximum drain current (ID) of the STW40N95DK5?

    The maximum drain current is 38 A.

  4. What package type is the STW40N95DK5 available in?

    The STW40N95DK5 is available in a TO-247 package.

  5. Does the STW40N95DK5 have any special features for high-frequency applications?

    Yes, it has a fast-recovery body diode and low gate charge, input capacitance, and resistance, making it suitable for high-frequency switching.

  6. Is the STW40N95DK5 tested for avalanche capability?

    Yes, it is 100% avalanche tested.

  7. What are some common applications for the STW40N95DK5?

    Common applications include power supplies, motor control systems, high-frequency switching applications, industrial and automotive power management, and renewable energy systems.

  8. What is the junction temperature range for the STW40N95DK5?

    The junction temperature range is -55°C to 150°C.

  9. Does the STW40N95DK5 have high dv/dt capability?

    Yes, it has extremely high dv/dt capability, making it suitable for high-speed switching applications.

  10. Where can I find detailed specifications and datasheets for the STW40N95DK5?

    Detailed specifications and datasheets can be found on the STMicroelectronics official website and through distributors like Digi-Key.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):950 V
Current - Continuous Drain (Id) @ 25°C:38A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:130mOhm @ 19A, 10V
Vgs(th) (Max) @ Id:5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:100 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:3480 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):450W (Tc)
Operating Temperature:-55°C ~ 150°C
Mounting Type:Through Hole
Supplier Device Package:TO-247
Package / Case:TO-247-3
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Same Series
STWA40N95DK5
STWA40N95DK5
MOSFET N-CHANNEL 950V 38A TO247

Similar Products

Part Number STW40N95DK5 STW40N95K5 STW20N95DK5
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 950 V 950 V 950 V
Current - Continuous Drain (Id) @ 25°C 38A (Tc) 38A (Tc) 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 130mOhm @ 19A, 10V 130mOhm @ 19A, 10V 330mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 5V @ 100µA 5V @ 100µA 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 100 nC @ 10 V 93 nC @ 10 V 50.7 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 3480 pF @ 100 V 3300 pF @ 100 V 1600 pF @ 100 V
FET Feature - - -
Power Dissipation (Max) 450W (Tc) 450W (Tc) 250W (Tc)
Operating Temperature -55°C ~ 150°C -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-247 TO-247-3 TO-247-3
Package / Case TO-247-3 TO-247-3 TO-247-3

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