STF20N95K5
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STMicroelectronics STF20N95K5

Manufacturer No:
STF20N95K5
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 950V 17.5A TO220FP
Delivery:
Payment:
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Product Introduction

Overview

The STF20N95K5 is a high-voltage N-channel Power MOSFET designed by STMicroelectronics using the innovative MDmesh™ K5 technology. This device is characterized by its very low on-resistance and ultra-low gate charge, making it ideal for applications requiring high power density and efficiency. Available in a TO-220FP package, the STF20N95K5 is part of STMicroelectronics' MDmesh K5 series, known for its superior performance in high-voltage switching applications.

Key Specifications

Parameter Value Unit
Drain-Source Breakdown Voltage (VBRDSS) 950 V
On-Resistance (RDS(on)) 0.275 (typ.) Ω
Drain Current (ID) 17.5 A
Gate Threshold Voltage (VGS(th)) - V
Gate-Source Charge (Qgs) -9 (typ.) nC
Gate-Drain Charge (Qgd) -32.5 (typ.) nC
Package Type TO-220FP -
Maximum Power Dissipation (PTOT) 250 W

Key Features

  • Industry’s lowest RDS(on) x area, ensuring high efficiency and power density.
  • Ultra-low gate charge, reducing switching losses and enhancing performance.
  • 100% avalanche tested, ensuring robustness and reliability.
  • Zener-protected gate to enhance ESD performance and eliminate the need for additional external components.
  • MDmesh™ K5 technology for superior power handling and thermal management.

Applications

  • Switching applications, including power supplies, motor drives, and DC-DC converters.
  • High-voltage power management systems.
  • Industrial and automotive applications requiring high power density and efficiency.

Q & A

  1. What is the drain-source breakdown voltage of the STF20N95K5?

    The drain-source breakdown voltage (VBRDSS) is 950 V.

  2. What is the typical on-resistance of the STF20N95K5?

    The typical on-resistance (RDS(on)) is 0.275 Ω.

  3. What is the maximum drain current of the STF20N95K5?

    The maximum drain current (ID) is 17.5 A.

  4. What package type is the STF20N95K5 available in?

    The STF20N95K5 is available in a TO-220FP package.

  5. What is the maximum power dissipation of the STF20N95K5?

    The maximum power dissipation (PTOT) is 250 W.

  6. What technology is used in the STF20N95K5?

    The STF20N95K5 uses MDmesh™ K5 technology.

  7. Is the STF20N95K5 100% avalanche tested?
  8. Does the STF20N95K5 have built-in Zener protection?
  9. What are some common applications for the STF20N95K5?
  10. Is the STF20N95K5 suitable for automotive applications?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):950 V
Current - Continuous Drain (Id) @ 25°C:17.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:330mOhm @ 9A, 10V
Vgs(th) (Max) @ Id:5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:40 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1500 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):40W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
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Same Series
STB20N95K5
STB20N95K5
MOSFET N-CH 950V 17.5A D2PAK
STP20N95K5
STP20N95K5
MOSFET N-CH 950V 17.5A TO220-3
STW20N95K5
STW20N95K5
MOSFET N-CH 950V 17.5A TO247-3

Similar Products

Part Number STF20N95K5 STF2N95K5 STF10N95K5 STF20N90K5
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 950 V 950 V 950 V 900 V
Current - Continuous Drain (Id) @ 25°C 17.5A (Tc) 2A (Tc) 8A (Tc) 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 330mOhm @ 9A, 10V 5Ohm @ 1A, 10V 800mOhm @ 4A, 10V 250mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 10 V 10 nC @ 10 V 22 nC @ 10 V 40 nC @ 10 V
Vgs (Max) ±30V 30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1500 pF @ 100 V 105 pF @ 100 V 630 pF @ 100 V 1500 pF @ 100 V
FET Feature - - - -
Power Dissipation (Max) 40W (Tc) 20W (Tc) 30W (Tc) 40W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

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