Overview
The STB20N95K5 is a high-voltage N-channel Power MOSFET designed by STMicroelectronics using the innovative MDmesh™ K5 technology. This device is part of the MDmesh K5 series, known for its superior power density and high efficiency. The STB20N95K5 is packaged in a D²PAK (TO-263-3) package and is suitable for various high-power applications requiring low on-resistance and ultra-low gate charge.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| FET Type | N-Channel | |
| Drain-to-Source Voltage (Vdss) | 950 | V |
| Drain-Source On Resistance (Rds(on)) | 0.33 | Ω |
| Maximum Drain Current (Id) | 17.5 | A |
| Maximum Power Dissipation (Pd) | 250 | W |
| Total Gate Charge (Qg) | 40 | nC |
| Maximum Gate-Source Voltage (Vgs) | 30 | V |
| Maximum Junction Temperature (Tj) | 150 | °C |
| Package Style | D²PAK (TO-263-3) | |
| Mounting Method | Surface Mount |
Key Features
- Industry’s lowest Rds(on) x area, providing superior power density and high efficiency.
- Ultra-low gate charge, enhancing switching performance and reducing power losses.
- 100% avalanche tested, ensuring robust device performance and reliable operation.
- Zener-protected, with built-in back-to-back Zener diodes to enhance ESD performance and device integrity.
- Minimum lot-to-lot variations, ensuring consistent device performance across different batches.
Applications
- Switching applications, such as power supplies and DC-DC converters.
- Motor drive applications, where high power and efficiency are required.
- Power switch applications, benefiting from the device's low on-resistance and high current handling.
Q & A
- What is the maximum drain-to-source voltage of the STB20N95K5?
The maximum drain-to-source voltage (Vdss) is 950 V.
- What is the maximum drain current of the STB20N95K5?
The maximum drain current (Id) is 17.5 A).
- What is the typical on-resistance of the STB20N95K5?
The typical drain-source on-resistance (Rds(on)) is 0.33 Ω).
- What is the maximum power dissipation of the STB20N95K5?
The maximum power dissipation (Pd) is 250 W).
- What is the package style of the STB20N95K5?
The package style is D²PAK (TO-263-3)).
- What technology is used in the STB20N95K5?
The STB20N95K5 is designed using MDmesh™ K5 technology).
- Is the STB20N95K5 100% avalanche tested?
Yes, the STB20N95K5 is 100% avalanche tested).
- What is the maximum gate-source voltage of the STB20N95K5?
The maximum gate-source voltage (Vgs) is 30 V).
- What is the total gate charge of the STB20N95K5?
The total gate charge (Qg) is 40 nC).
- What are some common applications of the STB20N95K5?
