Overview
The STB10N95K5 is an N-channel Power MOSFET designed by STMicroelectronics using their revolutionary avalanche-rugged very high voltage SuperMESH™ 5 technology. This device is part of the MDmesh K5 series and is known for its superior power density and high efficiency. It features ultra-low gate charge and a dramatic reduction in on-resistance, making it ideal for high-performance applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Breakdown Voltage (VBRDSS) | 950 | V |
| On-Resistance (RDS(on)) | 0.65 Ω (typ.) | Ω |
| Continuous Drain Current (ID) at TC = 25 °C | 8 A | A |
| Continuous Drain Current (ID) at TC = 100 °C | 5 A | A |
| Total Dissipation (PTOT) at TC = 25 °C | 130 W | W |
| Gate-Source Voltage (VGS) | ±30 V | V |
| Pulse Drain Current (IDM) | 32 A | A |
| Thermal Resistance Junction-Ambient (Rthj-amb) | 62.5 °C/W | °C/W |
| Total Gate Charge (Qg) | 22 nC | nC |
Key Features
- Worldwide best Figure of Merit (FOM)
- Ultra-low gate charge
- 100% avalanche tested
- Zener-protected for enhanced reliability
- SuperMESH™ 5 technology for superior power density and high efficiency
- Available in various packages: D2PAK, TO-220FP, TO-220, and TO-247
Applications
The STB10N95K5 is suitable for a variety of high-performance switching applications, including but not limited to:
- Power supplies and converters
- Motor control and drives
- High-frequency switching circuits
- Aerospace and automotive systems requiring high reliability and efficiency
Q & A
- What is the drain-source breakdown voltage of the STB10N95K5?
The drain-source breakdown voltage (VBRDSS) is 950 V. - What is the typical on-resistance of the STB10N95K5?
The typical on-resistance (RDS(on)) is 0.65 Ω. - What is the maximum continuous drain current at 25 °C?
The maximum continuous drain current (ID) at TC = 25 °C is 8 A. - What is the total dissipation at 25 °C?
The total dissipation (PTOT) at TC = 25 °C is 130 W. - What are the available packages for the STB10N95K5?
The STB10N95K5 is available in D2PAK, TO-220FP, TO-220, and TO-247 packages. - What technology is used in the STB10N95K5?
The STB10N95K5 uses STMicroelectronics' SuperMESH™ 5 technology. - Is the STB10N95K5 Zener-protected?
Yes, the STB10N95K5 is Zener-protected for enhanced reliability. - What is the maximum gate-source voltage?
The maximum gate-source voltage (VGS) is ±30 V. - What is the pulse drain current rating?
The pulse drain current (IDM) is 32 A. - What is the thermal resistance junction-ambient?
The thermal resistance junction-ambient (Rthj-amb) is 62.5 °C/W.
