STB20N90K5
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STMicroelectronics STB20N90K5

Manufacturer No:
STB20N90K5
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 900V 20A D2PAK
Delivery:
Payment:
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Product Introduction

Overview

The STB20N90K5 is a high-voltage N-channel Power MOSFET designed by STMicroelectronics using the innovative MDmesh™ K5 technology. This device is characterized by its low on-resistance and ultra-low gate charge, making it ideal for applications requiring high power density and efficiency. The STB20N90K5 is packaged in a D²PAK (TO-263) package, which is environmentally compliant and available in various ECOPACK® grades.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 900 V
RDS(on) (Static Drain-Source On-Resistance) 0.25 Ω
ID (Drain Current, continuous at TC = 25°C) 20 A
ID (Drain Current, continuous at TC = 100°C) 13 A
ID (Drain Current, pulsed) 80 A
PTOT (Total Dissipation at TC = 25°C) 250 W
VGS (Gate-Source Voltage) ±30 V
VGS(th) (Gate Threshold Voltage) 3 - 5 V
QGS (Gate-Source Charge) - 14 nC
QGD (Gate-Drain Charge) - 17 nC

Key Features

  • Industry’s lowest RDS(on) x area, ensuring high efficiency and power density.
  • Industry’s best figure of merit (FoM) for superior performance.
  • Ultra-low gate charge for fast switching times.
  • 100% avalanche tested for reliability.
  • Zener-protected gate-source to enhance ESD performance and eliminate the need for additional external components.

Applications

The STB20N90K5 is suitable for various high-power switching applications, including but not limited to:

  • Power supplies and DC-DC converters.
  • Motor control and drives.
  • Industrial automation and control systems.
  • High-voltage power management in consumer and industrial electronics.

Q & A

  1. What is the maximum drain-source voltage of the STB20N90K5?

    The maximum drain-source voltage (VDS) is 900 V.

  2. What is the typical on-resistance of the STB20N90K5?

    The typical static drain-source on-resistance (RDS(on)) is 0.25 Ω.

  3. What is the maximum continuous drain current at 25°C?

    The maximum continuous drain current (ID) at 25°C is 20 A.

  4. What is the gate-source threshold voltage range?

    The gate-source threshold voltage (VGS(th)) range is 3 to 5 V.

  5. Is the STB20N90K5 protected against ESD?
  6. What package type is the STB20N90K5 available in?

    The STB20N90K5 is available in a D²PAK (TO-263) package.

  7. What are the key benefits of using MDmesh™ K5 technology?

    The MDmesh™ K5 technology offers the industry’s lowest RDS(on) x area, ultra-low gate charge, and superior FoM, leading to high efficiency and power density.

  8. What is the maximum total dissipation at 25°C?

    The maximum total dissipation (PTOT) at 25°C is 250 W.

  9. What are some typical applications for the STB20N90K5?

    Typical applications include power supplies, DC-DC converters, motor control, and industrial automation.

  10. Is the STB20N90K5 100% avalanche tested?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):900 V
Current - Continuous Drain (Id) @ 25°C:20A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:250mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:40 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1500 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):250W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number STB20N90K5 STB20N95K5 STB21N90K5
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900 V 950 V 900 V
Current - Continuous Drain (Id) @ 25°C 20A (Tc) 17.5A (Tc) 18.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 250mOhm @ 10A, 10V 330mOhm @ 9A, 10V 299mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 5V @ 100µA 5V @ 100µA 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 10 V 40 nC @ 10 V 43 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1500 pF @ 100 V 1500 pF @ 100 V 1645 pF @ 100 V
FET Feature - - -
Power Dissipation (Max) 250W (Tc) 250W (Tc) 250W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package D²PAK (TO-263) D2PAK D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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