STB20N90K5
  • Share:

STMicroelectronics STB20N90K5

Manufacturer No:
STB20N90K5
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 900V 20A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STB20N90K5 is a high-voltage N-channel Power MOSFET designed by STMicroelectronics using the innovative MDmesh™ K5 technology. This device is characterized by its low on-resistance and ultra-low gate charge, making it ideal for applications requiring high power density and efficiency. The STB20N90K5 is packaged in a D²PAK (TO-263) package, which is environmentally compliant and available in various ECOPACK® grades.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 900 V
RDS(on) (Static Drain-Source On-Resistance) 0.25 Ω
ID (Drain Current, continuous at TC = 25°C) 20 A
ID (Drain Current, continuous at TC = 100°C) 13 A
ID (Drain Current, pulsed) 80 A
PTOT (Total Dissipation at TC = 25°C) 250 W
VGS (Gate-Source Voltage) ±30 V
VGS(th) (Gate Threshold Voltage) 3 - 5 V
QGS (Gate-Source Charge) - 14 nC
QGD (Gate-Drain Charge) - 17 nC

Key Features

  • Industry’s lowest RDS(on) x area, ensuring high efficiency and power density.
  • Industry’s best figure of merit (FoM) for superior performance.
  • Ultra-low gate charge for fast switching times.
  • 100% avalanche tested for reliability.
  • Zener-protected gate-source to enhance ESD performance and eliminate the need for additional external components.

Applications

The STB20N90K5 is suitable for various high-power switching applications, including but not limited to:

  • Power supplies and DC-DC converters.
  • Motor control and drives.
  • Industrial automation and control systems.
  • High-voltage power management in consumer and industrial electronics.

Q & A

  1. What is the maximum drain-source voltage of the STB20N90K5?

    The maximum drain-source voltage (VDS) is 900 V.

  2. What is the typical on-resistance of the STB20N90K5?

    The typical static drain-source on-resistance (RDS(on)) is 0.25 Ω.

  3. What is the maximum continuous drain current at 25°C?

    The maximum continuous drain current (ID) at 25°C is 20 A.

  4. What is the gate-source threshold voltage range?

    The gate-source threshold voltage (VGS(th)) range is 3 to 5 V.

  5. Is the STB20N90K5 protected against ESD?
  6. What package type is the STB20N90K5 available in?

    The STB20N90K5 is available in a D²PAK (TO-263) package.

  7. What are the key benefits of using MDmesh™ K5 technology?

    The MDmesh™ K5 technology offers the industry’s lowest RDS(on) x area, ultra-low gate charge, and superior FoM, leading to high efficiency and power density.

  8. What is the maximum total dissipation at 25°C?

    The maximum total dissipation (PTOT) at 25°C is 250 W.

  9. What are some typical applications for the STB20N90K5?

    Typical applications include power supplies, DC-DC converters, motor control, and industrial automation.

  10. Is the STB20N90K5 100% avalanche tested?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):900 V
Current - Continuous Drain (Id) @ 25°C:20A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:250mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:40 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1500 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):250W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

$6.80
10

Please send RFQ , we will respond immediately.

Similar Products

Part Number STB20N90K5 STB20N95K5 STB21N90K5
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900 V 950 V 900 V
Current - Continuous Drain (Id) @ 25°C 20A (Tc) 17.5A (Tc) 18.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 250mOhm @ 10A, 10V 330mOhm @ 9A, 10V 299mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 5V @ 100µA 5V @ 100µA 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 10 V 40 nC @ 10 V 43 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1500 pF @ 100 V 1500 pF @ 100 V 1645 pF @ 100 V
FET Feature - - -
Power Dissipation (Max) 250W (Tc) 250W (Tc) 250W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package D²PAK (TO-263) D2PAK D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

FQD2N90TM
FQD2N90TM
onsemi
MOSFET N-CH 900V 1.7A DPAK
2N7002HSX
2N7002HSX
Nexperia USA Inc.
2N7002HS/SOT363/SC-88
STP19NF20
STP19NF20
STMicroelectronics
MOSFET N-CH 200V 15A TO220AB
FCD380N60E
FCD380N60E
onsemi
MOSFET N-CH 600V 10.2A DPAK
MVGSF1N02LT1G
MVGSF1N02LT1G
onsemi
MOSFET N-CH 20V 750MA SOT23-3
BUK7Y4R4-40EX
BUK7Y4R4-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 100A LFPAK56
STP8N120K5
STP8N120K5
STMicroelectronics
MOSFET N-CH 1200V 6A TO220
NTMFS5C468NLT1G
NTMFS5C468NLT1G
onsemi
MOSFET N-CH 40V 5DFN
STL220N6F7
STL220N6F7
STMicroelectronics
MOSFET N-CH 60V 120A POWERFLAT
BSN20BK215
BSN20BK215
Nexperia USA Inc.
SMALL SIGNAL N-CHANNEL MOSFET
2N7002H-13
2N7002H-13
Diodes Incorporated
MOSFET N-CH 60V 170MA SOT23
NTMFS4C55NT1G
NTMFS4C55NT1G
onsemi
MOSFET N-CH 30V 78A SO8FL

Related Product By Brand

STPS160H100TV
STPS160H100TV
STMicroelectronics
DIODE MODULE 100V 80A ISOTOP
STPS1045D
STPS1045D
STMicroelectronics
DIODE SCHOTTKY 45V 10A TO220AC
STP11NK40Z
STP11NK40Z
STMicroelectronics
MOSFET N-CH 400V 9A TO220AB
STP6NK90ZFP
STP6NK90ZFP
STMicroelectronics
MOSFET N-CH 900V 5.8A TO220FP
STH15NB50FI
STH15NB50FI
STMicroelectronics
MOSFET N-CH 500V 10.5A ISOWAT218
STGWA19NC60HD
STGWA19NC60HD
STMicroelectronics
IGBT 600V 52A 208W TO247
STM32L433VCT3
STM32L433VCT3
STMicroelectronics
IC MCU 32BIT 256KB FLASH 100LQFP
SPC58EC80E5EMC0X
SPC58EC80E5EMC0X
STMicroelectronics
IC MCU 32BIT 4MB FLASH 144ETQFP
LM239DT
LM239DT
STMicroelectronics
IC COMP QUAD LOW PWR 14SOIC
VNS3NV04-E
VNS3NV04-E
STMicroelectronics
IC PWR DRIVER N-CHANNEL 1:1 8SO
VNQ6040S-E
VNQ6040S-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO36
LD39015M33R
LD39015M33R
STMicroelectronics
IC REG LINEAR 3.3V 150MA SOT23-5