STB21N90K5
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STMicroelectronics STB21N90K5

Manufacturer No:
STB21N90K5
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 900V 18.5A D2PAK
Delivery:
Payment:
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Product Introduction

Overview

The STB21N90K5 is a high-performance N-channel Power MOSFET developed by STMicroelectronics using the advanced SuperMESH™ 5 technology. This device is designed to offer superior power density and high efficiency, making it ideal for various high-voltage switching applications. The STB21N90K5 features a low on-resistance (RDS(on)) of 0.25 Ω (typical) and a high drain current of 18.5 A, ensuring minimal power loss and high reliability. It is available in several package types, including D2PAK, TO-220FP, TO-220, and TO-247, catering to different design requirements.

Key Specifications

Parameter Value Unit
Drain-Source Breakdown Voltage (V(BR)DSS) 900 V
On-Resistance (RDS(on)) < 0.299 Ω
Drain Current (ID) 18.5 A
Total Dissipation (PTOT) 250 W
Gate-Source Voltage (VGS) ± 30 V
Operating Junction Temperature (Tj) -55 to 150 °C
Thermal Resistance Junction-Case (Rthj-case) 0.5 °C/W
Thermal Resistance Junction-Ambient (Rthj-amb) 62.5 °C/W

Key Features

  • Worldwide best RDS(on) in TO-220 package
  • Worldwide best Figure of Merit (FOM)
  • Ultra-low gate charge
  • 100% avalanche tested
  • Zener-protected gate-source voltage
  • Avalanche-rugged and high voltage capability
  • ECOPACK® compliant packages for environmental sustainability

Applications

The STB21N90K5 is suitable for a variety of high-voltage switching applications, including:

  • Power supplies and DC-DC converters
  • Motor control and drives
  • Industrial automation and control systems
  • High-frequency switching circuits
  • Aerospace and defense applications requiring high reliability

Q & A

  1. What is the drain-source breakdown voltage of the STB21N90K5?

    The drain-source breakdown voltage (V(BR)DSS) is 900 V.

  2. What is the typical on-resistance (RDS(on)) of the STB21N90K5?

    The typical on-resistance (RDS(on)) is 0.25 Ω.

  3. What is the maximum continuous drain current (ID) at 25°C?

    The maximum continuous drain current (ID) at 25°C is 18.5 A.

  4. What are the available package types for the STB21N90K5?

    The device is available in D2PAK, TO-220FP, TO-220, and TO-247 packages.

  5. Is the STB21N90K5 avalanche tested?

    Yes, the STB21N90K5 is 100% avalanche tested.

  6. What is the gate-source voltage (VGS) range for the STB21N90K5?

    The gate-source voltage (VGS) range is ± 30 V.

  7. What is the thermal resistance junction-case (Rthj-case) for the STB21N90K5?

    The thermal resistance junction-case (Rthj-case) is 0.5 °C/W.

  8. Is the STB21N90K5 environmentally compliant?

    Yes, the device is available in ECOPACK® compliant packages.

  9. What are some common applications for the STB21N90K5?

    Common applications include power supplies, motor control, industrial automation, and high-frequency switching circuits.

  10. What is the operating junction temperature range for the STB21N90K5?

    The operating junction temperature range is -55 to 150 °C.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):900 V
Current - Continuous Drain (Id) @ 25°C:18.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:299mOhm @ 9A, 10V
Vgs(th) (Max) @ Id:5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:43 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1645 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):250W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Same Series
STP21N90K5
STP21N90K5
MOSFET N-CH 900V 18.5A TO220-3
STW21N90K5
STW21N90K5
MOSFET N-CH 900V 18.5A TO247-3
STF21N90K5
STF21N90K5
MOSFET N-CH 900V 18.5A TO220FP

Similar Products

Part Number STB21N90K5 STB20N90K5
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900 V 900 V
Current - Continuous Drain (Id) @ 25°C 18.5A (Tc) 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 299mOhm @ 9A, 10V 250mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 5V @ 100µA 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 43 nC @ 10 V 40 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1645 pF @ 100 V 1500 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 250W (Tc) 250W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package D2PAK D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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