STW10N95K5
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STMicroelectronics STW10N95K5

Manufacturer No:
STW10N95K5
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 950V 8A TO247
Delivery:
Payment:
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Product Introduction

Overview

The STW10N95K5 is an N-channel Power MOSFET from STMicroelectronics, designed using the advanced MDmesh K5 technology. This device is part of the SuperMESH™ 5 series, known for its high voltage and low on-resistance characteristics. The STW10N95K5 is housed in a TO-247 package and is optimized for high-efficiency and high-power density applications. It features a drain-source breakdown voltage of 950 V, a typical on-resistance of 0.65 Ω, and a continuous drain current of 8 A. The MOSFET is also Zener-protected, enhancing its ruggedness and reliability in demanding environments.

Key Specifications

ParameterValueUnit
Drain-Source Breakdown Voltage (VBRDSS)950V
On-Resistance (RDS(on))0.65 (typ.)Ω
Continuous Drain Current (ID) at TC = 25 °C8A
Continuous Drain Current (ID) at TC = 100 °C5A
Pulsed Drain Current (IDM)32A
Total Dissipation at TC = 25 °C130W
Gate-Source Voltage (VGS)±30V
Thermal Resistance Junction-Case (Rthj-case)62.5°C/W
Thermal Resistance Junction-PCB (Rthj-pcb)30°C/W

Key Features

  • Worldwide best Figure of Merit (FOM)
  • Ultra-low gate charge
  • 100% avalanche tested
  • Zener-protected for enhanced ruggedness
  • Low on-resistance and high efficiency
  • MDmesh K5 technology for superior power density
  • ECOPACK® packages for environmental compliance

Applications

The STW10N95K5 is suitable for a variety of high-power switching applications, including but not limited to:

  • Power supplies and converters
  • Motor control and drives
  • Industrial automation
  • Renewable energy systems
  • High-efficiency power management systems

Q & A

  1. What is the drain-source breakdown voltage of the STW10N95K5?
    The drain-source breakdown voltage (VBRDSS) is 950 V.
  2. What is the typical on-resistance of the STW10N95K5?
    The typical on-resistance (RDS(on)) is 0.65 Ω.
  3. What is the continuous drain current at 25 °C for the STW10N95K5?
    The continuous drain current (ID) at TC = 25 °C is 8 A.
  4. What is the maximum pulsed drain current for the STW10N95K5?
    The maximum pulsed drain current (IDM) is 32 A.
  5. What is the thermal resistance junction-case for the STW10N95K5?
    The thermal resistance junction-case (Rthj-case) is 62.5 °C/W.
  6. Is the STW10N95K5 Zener-protected?
    Yes, the STW10N95K5 is Zener-protected.
  7. What package type is the STW10N95K5 available in?
    The STW10N95K5 is available in a TO-247 package.
  8. What is the gate-source voltage range for the STW10N95K5?
    The gate-source voltage (VGS) range is ±30 V.
  9. What are some typical applications for the STW10N95K5?
    Typical applications include power supplies, motor control, industrial automation, and renewable energy systems.
  10. Does the STW10N95K5 comply with environmental standards?
    Yes, the STW10N95K5 is available in ECOPACK® packages, which comply with environmental standards.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):950 V
Current - Continuous Drain (Id) @ 25°C:8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:800mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:22 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:630 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):130W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
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Same Series
STF10N95K5
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STP10N95K5
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Similar Products

Part Number STW10N95K5 STW20N95K5 STW15N95K5
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 950 V 950 V 950 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc) 17.5A (Tc) 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 800mOhm @ 4A, 10V 330mOhm @ 9A, 10V 500mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 5V @ 100µA 5V @ 100µA 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V 40 nC @ 10 V 40 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 630 pF @ 100 V 1500 pF @ 100 V 900 pF @ 100 V
FET Feature - - -
Power Dissipation (Max) 130W (Tc) 250W (Tc) 170W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3 TO-247-3
Package / Case TO-247-3 TO-247-3 TO-247-3

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