Overview
The STW10N95K5 is an N-channel Power MOSFET from STMicroelectronics, designed using the advanced MDmesh K5 technology. This device is part of the SuperMESH™ 5 series, known for its high voltage and low on-resistance characteristics. The STW10N95K5 is housed in a TO-247 package and is optimized for high-efficiency and high-power density applications. It features a drain-source breakdown voltage of 950 V, a typical on-resistance of 0.65 Ω, and a continuous drain current of 8 A. The MOSFET is also Zener-protected, enhancing its ruggedness and reliability in demanding environments.
Key Specifications
Parameter | Value | Unit |
---|---|---|
Drain-Source Breakdown Voltage (VBRDSS) | 950 | V |
On-Resistance (RDS(on)) | 0.65 (typ.) | Ω |
Continuous Drain Current (ID) at TC = 25 °C | 8 | A |
Continuous Drain Current (ID) at TC = 100 °C | 5 | A |
Pulsed Drain Current (IDM) | 32 | A |
Total Dissipation at TC = 25 °C | 130 | W |
Gate-Source Voltage (VGS) | ±30 | V |
Thermal Resistance Junction-Case (Rthj-case) | 62.5 | °C/W |
Thermal Resistance Junction-PCB (Rthj-pcb) | 30 | °C/W |
Key Features
- Worldwide best Figure of Merit (FOM)
- Ultra-low gate charge
- 100% avalanche tested
- Zener-protected for enhanced ruggedness
- Low on-resistance and high efficiency
- MDmesh K5 technology for superior power density
- ECOPACK® packages for environmental compliance
Applications
The STW10N95K5 is suitable for a variety of high-power switching applications, including but not limited to:
- Power supplies and converters
- Motor control and drives
- Industrial automation
- Renewable energy systems
- High-efficiency power management systems
Q & A
- What is the drain-source breakdown voltage of the STW10N95K5?
The drain-source breakdown voltage (VBRDSS) is 950 V. - What is the typical on-resistance of the STW10N95K5?
The typical on-resistance (RDS(on)) is 0.65 Ω. - What is the continuous drain current at 25 °C for the STW10N95K5?
The continuous drain current (ID) at TC = 25 °C is 8 A. - What is the maximum pulsed drain current for the STW10N95K5?
The maximum pulsed drain current (IDM) is 32 A. - What is the thermal resistance junction-case for the STW10N95K5?
The thermal resistance junction-case (Rthj-case) is 62.5 °C/W. - Is the STW10N95K5 Zener-protected?
Yes, the STW10N95K5 is Zener-protected. - What package type is the STW10N95K5 available in?
The STW10N95K5 is available in a TO-247 package. - What is the gate-source voltage range for the STW10N95K5?
The gate-source voltage (VGS) range is ±30 V. - What are some typical applications for the STW10N95K5?
Typical applications include power supplies, motor control, industrial automation, and renewable energy systems. - Does the STW10N95K5 comply with environmental standards?
Yes, the STW10N95K5 is available in ECOPACK® packages, which comply with environmental standards.