STW15N95K5
  • Share:

STMicroelectronics STW15N95K5

Manufacturer No:
STW15N95K5
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 950V 12A TO247
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STW15N95K5 is an N-channel Power MOSFET developed by STMicroelectronics using the advanced SuperMESH™ 5 technology. This device is known for its ultra-low gate charge, high voltage handling, and avalanche ruggedness, making it suitable for a variety of high-performance applications. The STW15N95K5 is packaged in a TO-247 package, which is designed to handle high power and thermal requirements.

Key Specifications

ParameterValue
Drain-Source Voltage (Vds)950 V
Drain Current (Id)7.6 A
On-Resistance (Rds(on))0.41 Ohm (typ.)
Gate Charge (Qg)Ultra low
PackagingTO-247
TechnologySuperMESH™ 5

Key Features

  • Avalanche ruggedness for enhanced reliability
  • Ultra-low gate charge for efficient switching
  • High voltage handling capability of up to 950 V
  • Low on-resistance (Rds(on)) of 0.41 Ohm (typ.)
  • TO-247 package for high power and thermal management

Applications

The STW15N95K5 is suitable for various high-power applications, including:

  • Switch Mode Power Supplies (SMPS)
  • Motor Control and Drives
  • Power Factor Correction (PFC) circuits
  • High-frequency switching circuits
  • Industrial and automotive power systems

Q & A

  1. What is the drain-source voltage rating of the STW15N95K5?
    The drain-source voltage rating is 950 V.
  2. What is the typical on-resistance of the STW15N95K5?
    The typical on-resistance (Rds(on)) is 0.41 Ohm.
  3. What technology is used in the STW15N95K5?
    The STW15N95K5 uses SuperMESH™ 5 technology.
  4. What is the maximum drain current of the STW15N95K5?
    The maximum drain current is 7.6 A.
  5. In what package is the STW15N95K5 available?
    The STW15N95K5 is available in a TO-247 package.
  6. What are some typical applications of the STW15N95K5?
    Typical applications include SMPS, motor control, PFC circuits, high-frequency switching circuits, and industrial and automotive power systems.
  7. Is the STW15N95K5 avalanche rugged?
    Yes, the STW15N95K5 is avalanche rugged.
  8. What is the gate charge characteristic of the STW15N95K5?
    The STW15N95K5 has an ultra-low gate charge.
  9. Why is the SuperMESH™ 5 technology important in the STW15N95K5?
    The SuperMESH™ 5 technology enhances the device's performance by providing low on-resistance, high voltage handling, and improved switching characteristics.
  10. Can the STW15N95K5 be used in high-temperature environments?
    While specific temperature ratings should be checked in the datasheet, the device is generally robust and suitable for various environmental conditions.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):950 V
Current - Continuous Drain (Id) @ 25°C:12A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:500mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:40 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:900 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):170W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
0 Remaining View Similar

In Stock

-
153

Please send RFQ , we will respond immediately.

Same Series
STF15N95K5
STF15N95K5
MOSFET N-CH 950V 12A TO220FP
STP15N95K5
STP15N95K5
MOSFET N-CH 950V 12A TO220

Similar Products

Part Number STW15N95K5 STW10N95K5
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 950 V 950 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc) 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 500mOhm @ 6A, 10V 800mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 5V @ 100µA 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 10 V 22 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 900 pF @ 100 V 630 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 170W (Tc) 130W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3
Package / Case TO-247-3 TO-247-3

Related Product By Categories

FDD86102LZ
FDD86102LZ
onsemi
MOSFET N-CH 100V 8A/35A DPAK
NTLJF4156NT1G
NTLJF4156NT1G
onsemi
MOSFET N-CH 30V 2.5A 6WDFN
STP19NF20
STP19NF20
STMicroelectronics
MOSFET N-CH 200V 15A TO220AB
CSD18531Q5AT
CSD18531Q5AT
Texas Instruments
MOSFET N-CH 60V 100A 8VSON
FDN357N
FDN357N
onsemi
MOSFET N-CH 30V 1.9A SUPERSOT3
CSD17581Q5AT
CSD17581Q5AT
Texas Instruments
MOSFET N-CH 30V 24A/123A 8VSON
PSMN0R9-25YLDX
PSMN0R9-25YLDX
Nexperia USA Inc.
MOSFET N-CH 25V 300A LFPAK56
BSS84AKW
BSS84AKW
Nexperia USA Inc.
NOW NEXPERIA BSS84AKW - SMALL SI
STF38N65M5
STF38N65M5
STMicroelectronics
MOSFET N-CH 650V 30A TO220FP
PHP9NQ20T,127
PHP9NQ20T,127
Nexperia USA Inc.
MOSFET N-CH 200V 8.7A TO220AB
STW15NB50
STW15NB50
STMicroelectronics
MOSFET N-CH 500V 14.6A TO247-3
MCH3375-TL-W-Z
MCH3375-TL-W-Z
onsemi
MOSFET P-CH 30V 1.6A SC-70FL

Related Product By Brand

STGIPQ3H60T-HZS
STGIPQ3H60T-HZS
STMicroelectronics
PWR MODULE 600V 3A 26DIP
STM32F745VGH6
STM32F745VGH6
STMicroelectronics
IC MCU 32BIT 1MB FLASH 100TFBGA
TDA7491LP
TDA7491LP
STMicroelectronics
IC AMP CLSS D STER 5W POWERSSO36
TS393IPT
TS393IPT
STMicroelectronics
IC COMPARATOR DUAL MCRPWR 8TSSOP
LM293N
LM293N
STMicroelectronics
IC COMPARATOR LP DUAL 8-DIP
M24C04-FMC5TG
M24C04-FMC5TG
STMicroelectronics
IC EEPROM 4KBIT I2C 8UFDFPN
M27C4001-12F6
M27C4001-12F6
STMicroelectronics
IC EPROM 4MBIT PARALLEL 32CDIP
VNN3NV04PTR-E
VNN3NV04PTR-E
STMicroelectronics
IC PWR DRIVER N-CHAN 1:1 SOT223
VNS3NV04-E
VNS3NV04-E
STMicroelectronics
IC PWR DRIVER N-CHANNEL 1:1 8SO
L9779WDM
L9779WDM
STMicroelectronics
HI-QUAD 64 14X14 POW
PM8908TR
PM8908TR
STMicroelectronics
IC REG CONV DDR 1OUT 20QFN
LPR450AL
LPR450AL
STMicroelectronics
GYRO 500DEG/S 2MV 140HZ 28LGA