STW15N95K5
  • Share:

STMicroelectronics STW15N95K5

Manufacturer No:
STW15N95K5
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 950V 12A TO247
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STW15N95K5 is an N-channel Power MOSFET developed by STMicroelectronics using the advanced SuperMESH™ 5 technology. This device is known for its ultra-low gate charge, high voltage handling, and avalanche ruggedness, making it suitable for a variety of high-performance applications. The STW15N95K5 is packaged in a TO-247 package, which is designed to handle high power and thermal requirements.

Key Specifications

ParameterValue
Drain-Source Voltage (Vds)950 V
Drain Current (Id)7.6 A
On-Resistance (Rds(on))0.41 Ohm (typ.)
Gate Charge (Qg)Ultra low
PackagingTO-247
TechnologySuperMESH™ 5

Key Features

  • Avalanche ruggedness for enhanced reliability
  • Ultra-low gate charge for efficient switching
  • High voltage handling capability of up to 950 V
  • Low on-resistance (Rds(on)) of 0.41 Ohm (typ.)
  • TO-247 package for high power and thermal management

Applications

The STW15N95K5 is suitable for various high-power applications, including:

  • Switch Mode Power Supplies (SMPS)
  • Motor Control and Drives
  • Power Factor Correction (PFC) circuits
  • High-frequency switching circuits
  • Industrial and automotive power systems

Q & A

  1. What is the drain-source voltage rating of the STW15N95K5?
    The drain-source voltage rating is 950 V.
  2. What is the typical on-resistance of the STW15N95K5?
    The typical on-resistance (Rds(on)) is 0.41 Ohm.
  3. What technology is used in the STW15N95K5?
    The STW15N95K5 uses SuperMESH™ 5 technology.
  4. What is the maximum drain current of the STW15N95K5?
    The maximum drain current is 7.6 A.
  5. In what package is the STW15N95K5 available?
    The STW15N95K5 is available in a TO-247 package.
  6. What are some typical applications of the STW15N95K5?
    Typical applications include SMPS, motor control, PFC circuits, high-frequency switching circuits, and industrial and automotive power systems.
  7. Is the STW15N95K5 avalanche rugged?
    Yes, the STW15N95K5 is avalanche rugged.
  8. What is the gate charge characteristic of the STW15N95K5?
    The STW15N95K5 has an ultra-low gate charge.
  9. Why is the SuperMESH™ 5 technology important in the STW15N95K5?
    The SuperMESH™ 5 technology enhances the device's performance by providing low on-resistance, high voltage handling, and improved switching characteristics.
  10. Can the STW15N95K5 be used in high-temperature environments?
    While specific temperature ratings should be checked in the datasheet, the device is generally robust and suitable for various environmental conditions.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):950 V
Current - Continuous Drain (Id) @ 25°C:12A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:500mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:40 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:900 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):170W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
0 Remaining View Similar

In Stock

-
153

Please send RFQ , we will respond immediately.

Same Series
STF15N95K5
STF15N95K5
MOSFET N-CH 950V 12A TO220FP
STP15N95K5
STP15N95K5
MOSFET N-CH 950V 12A TO220

Similar Products

Part Number STW15N95K5 STW10N95K5
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 950 V 950 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc) 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 500mOhm @ 6A, 10V 800mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 5V @ 100µA 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 10 V 22 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 900 pF @ 100 V 630 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 170W (Tc) 130W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3
Package / Case TO-247-3 TO-247-3

Related Product By Categories

BSC040N10NS5ATMA1
BSC040N10NS5ATMA1
Infineon Technologies
MOSFET N-CH 100V 100A TDSON
FDMT80040DC
FDMT80040DC
onsemi
MOSFET N-CH 40V 420A 8PQFN
NVR5124PLT1G
NVR5124PLT1G
onsemi
MOSFET P-CH 60V 1.1A SOT23-3
STF18NM60N
STF18NM60N
STMicroelectronics
MOSFET N-CH 600V 13A TO220FP
STL36N55M5
STL36N55M5
STMicroelectronics
MOSFET N-CH 550V 22.5A 4PWRFLAT
STL10N65M2
STL10N65M2
STMicroelectronics
MOSFET N-CH 650V 4.5A POWERFLAT
NTMFS5C612NLT1G
NTMFS5C612NLT1G
onsemi
MOSFET N-CH 60V 36A/235A 5DFN
BSS84AKW
BSS84AKW
Nexperia USA Inc.
NOW NEXPERIA BSS84AKW - SMALL SI
MTD6N15T4
MTD6N15T4
onsemi
MOSFET N-CH 150V 6A DPAK
FDMC8010ET30
FDMC8010ET30
onsemi
MOSFET N-CH 30V 30A/174A POWER33
PMV65XP/MIR
PMV65XP/MIR
Nexperia USA Inc.
MOSFET P-CH 20V 2.8A TO236AB
BSS138-F169
BSS138-F169
onsemi
MOSFET N-CH SOT23

Related Product By Brand

STPS0560Z
STPS0560Z
STMicroelectronics
DIODE SCHOTTKY 60V 500MA SOD123
STP40NF03L
STP40NF03L
STMicroelectronics
MOSFET N-CH 30V 40A TO220AB
STD6N80K5
STD6N80K5
STMicroelectronics
MOSFET N-CH 800V 4.5A DPAK
STGP30H60DFB
STGP30H60DFB
STMicroelectronics
TRENCH GATE FIELD-STOP IGBT, HB
STM32F078VBH6
STM32F078VBH6
STMicroelectronics
IC MCU 32BIT 128KB FLSH 100UFBGA
E-TDA7560A
E-TDA7560A
STMicroelectronics
IC AMP AB QUAD 80W 27FLEXIWATT
L6201PS
L6201PS
STMicroelectronics
IC MOTOR DRIVER PAR 20POWERSO
VN750SM
VN750SM
STMicroelectronics
IC PWR DRIVER N-CHANNEL 1:1 8SO
BALF-SPI-02D3
BALF-SPI-02D3
STMicroelectronics
BALUN 434MHZ 6WFBGA FCBGA
AIS326DQ
AIS326DQ
STMicroelectronics
ACCEL 2-6G I2C/SPI 28QFPN
ISM330DHCXTR
ISM330DHCXTR
STMicroelectronics
INEMO INERTIAL MODULE: ALWAYS-ON
LSM6DS3HTR
LSM6DS3HTR
STMicroelectronics
IMU ACCEL/GYRO/TEMP I2C/SPI LGA