STW15N95K5
  • Share:

STMicroelectronics STW15N95K5

Manufacturer No:
STW15N95K5
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 950V 12A TO247
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STW15N95K5 is an N-channel Power MOSFET developed by STMicroelectronics using the advanced SuperMESH™ 5 technology. This device is known for its ultra-low gate charge, high voltage handling, and avalanche ruggedness, making it suitable for a variety of high-performance applications. The STW15N95K5 is packaged in a TO-247 package, which is designed to handle high power and thermal requirements.

Key Specifications

ParameterValue
Drain-Source Voltage (Vds)950 V
Drain Current (Id)7.6 A
On-Resistance (Rds(on))0.41 Ohm (typ.)
Gate Charge (Qg)Ultra low
PackagingTO-247
TechnologySuperMESH™ 5

Key Features

  • Avalanche ruggedness for enhanced reliability
  • Ultra-low gate charge for efficient switching
  • High voltage handling capability of up to 950 V
  • Low on-resistance (Rds(on)) of 0.41 Ohm (typ.)
  • TO-247 package for high power and thermal management

Applications

The STW15N95K5 is suitable for various high-power applications, including:

  • Switch Mode Power Supplies (SMPS)
  • Motor Control and Drives
  • Power Factor Correction (PFC) circuits
  • High-frequency switching circuits
  • Industrial and automotive power systems

Q & A

  1. What is the drain-source voltage rating of the STW15N95K5?
    The drain-source voltage rating is 950 V.
  2. What is the typical on-resistance of the STW15N95K5?
    The typical on-resistance (Rds(on)) is 0.41 Ohm.
  3. What technology is used in the STW15N95K5?
    The STW15N95K5 uses SuperMESH™ 5 technology.
  4. What is the maximum drain current of the STW15N95K5?
    The maximum drain current is 7.6 A.
  5. In what package is the STW15N95K5 available?
    The STW15N95K5 is available in a TO-247 package.
  6. What are some typical applications of the STW15N95K5?
    Typical applications include SMPS, motor control, PFC circuits, high-frequency switching circuits, and industrial and automotive power systems.
  7. Is the STW15N95K5 avalanche rugged?
    Yes, the STW15N95K5 is avalanche rugged.
  8. What is the gate charge characteristic of the STW15N95K5?
    The STW15N95K5 has an ultra-low gate charge.
  9. Why is the SuperMESH™ 5 technology important in the STW15N95K5?
    The SuperMESH™ 5 technology enhances the device's performance by providing low on-resistance, high voltage handling, and improved switching characteristics.
  10. Can the STW15N95K5 be used in high-temperature environments?
    While specific temperature ratings should be checked in the datasheet, the device is generally robust and suitable for various environmental conditions.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):950 V
Current - Continuous Drain (Id) @ 25°C:12A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:500mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:40 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:900 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):170W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
0 Remaining View Similar

In Stock

-
153

Please send RFQ , we will respond immediately.

Same Series
STP15N95K5
STP15N95K5
MOSFET N-CH 950V 12A TO220
STW15N95K5
STW15N95K5
MOSFET N-CH 950V 12A TO247

Similar Products

Part Number STW15N95K5 STW10N95K5
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 950 V 950 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc) 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 500mOhm @ 6A, 10V 800mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 5V @ 100µA 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 10 V 22 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 900 pF @ 100 V 630 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 170W (Tc) 130W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3
Package / Case TO-247-3 TO-247-3

Related Product By Categories

FDMC2523P
FDMC2523P
onsemi
MOSFET P-CH 150V 3A 8MLP
2N7002-TP
2N7002-TP
Micro Commercial Co
MOSFET N-CH 60V 115MA SOT23
BUK7Y4R4-40EX
BUK7Y4R4-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 100A LFPAK56
FCD3400N80Z
FCD3400N80Z
onsemi
MOSFET N-CH 800V 2A DPAK
STF13N65M2
STF13N65M2
STMicroelectronics
MOSFET N-CH 650V 10A TO220FP
STP14NK60ZFP
STP14NK60ZFP
STMicroelectronics
MOSFET N-CH 600V 13.5A TO220FP
PHP9NQ20T,127
PHP9NQ20T,127
Nexperia USA Inc.
MOSFET N-CH 200V 8.7A TO220AB
STW15NB50
STW15NB50
STMicroelectronics
MOSFET N-CH 500V 14.6A TO247-3
PH5030AL,115
PH5030AL,115
Nexperia USA Inc.
MOSFET N-CH 30V 91A LFPAK56
STW6N120K3
STW6N120K3
STMicroelectronics
MOSFET N-CH 1200V 6A TO247
FDB075N15A_SN00284
FDB075N15A_SN00284
onsemi
MOSFET N-CH 150V 130A D2PAK
IRF7416TRPBF-1
IRF7416TRPBF-1
Infineon Technologies
MOSFET P-CH 30V 10A 8SO

Related Product By Brand

SM6T24CAY
SM6T24CAY
STMicroelectronics
TVS DIODE 20.5VWM 42.8VC SMB
BAT54JFILM
BAT54JFILM
STMicroelectronics
DIODE SCHOTTKY 40V 300MA SOD323
T405Q-600H
T405Q-600H
STMicroelectronics
TRIAC SENS GATE 600V 4A IPAK
STP18N60M2
STP18N60M2
STMicroelectronics
MOSFET N-CH 600V 13A TO220
STM32L486RGT6
STM32L486RGT6
STMicroelectronics
IC MCU 32BIT 1MB FLASH 64LQFP
STM32F427VGT7
STM32F427VGT7
STMicroelectronics
IC MCU 32BIT 1MB FLASH 100LQFP
TDA7360HS
TDA7360HS
STMicroelectronics
IC AMP AB MONO/STER 11MULTIWATT
M24C04-FMC5TG
M24C04-FMC5TG
STMicroelectronics
IC EEPROM 4KBIT I2C 8UFDFPN
M24C02-WMN6
M24C02-WMN6
STMicroelectronics
IC EEPROM 2KBIT I2C 400KHZ 8SO
ST1S10PHR
ST1S10PHR
STMicroelectronics
IC REG BUCK ADJ 3A POWERSO-8
L79L15ACD13TR
L79L15ACD13TR
STMicroelectronics
IC REG LINEAR -15V 100MA 8SO
L5050STR
L5050STR
STMicroelectronics
IC REG LINEAR 5V 50MA 8SO