STF15N95K5
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STMicroelectronics STF15N95K5

Manufacturer No:
STF15N95K5
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 950V 12A TO220FP
Delivery:
Payment:
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Product Introduction

Overview

The STF15N95K5 is an N-channel Power MOSFET developed by STMicroelectronics using the advanced SuperMESH™ 5 technology. This device is known for its high voltage and low on-resistance, making it ideal for applications requiring superior power density and high efficiency. The STF15N95K5 is available in the TO-220FP package and is characterized by its avalanche-rugged design and ultra-low gate charge.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 950 V
RDS(on) (Static Drain-Source On-Resistance) 0.41 (typ), 0.50 (max) Ω
ID (Drain Current, continuous at TC = 25 °C) 12 A
ID (Drain Current, continuous at TC = 100 °C) 7.6 A
IDM (Drain Current, pulsed) 48 A
PTOT (Total Dissipation at TC = 25 °C) 30 W
VGS (Gate-Source Voltage) ±30 V
VGS(th) (Gate Threshold Voltage) 3 to 5 V
Tj (Operating Junction Temperature) -55 to 150 °C
Tstg (Storage Temperature) -55 to 150 °C

Key Features

  • Ultra-low gate charge for high efficiency and fast switching times.
  • Worldwide best RDS(on) and figure of merit (FOM) for TO-220 packages.
  • 100% avalanche tested for robustness and reliability.
  • Zener-protected gate to enhance ESD capability and protect against voltage transients.
  • Avalanche-rugged design to handle high voltage and current stresses.
  • ECOPACK® compliant packages for environmental sustainability.

Applications

The STF15N95K5 is suitable for various switching applications that require high power density and efficiency. These include:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • High-frequency switching circuits.
  • Industrial and automotive power systems.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STF15N95K5?

    The maximum drain-source voltage (VDS) is 950 V.

  2. What is the typical on-resistance (RDS(on)) of the STF15N95K5?

    The typical on-resistance (RDS(on)) is 0.41 Ω.

  3. What is the maximum continuous drain current (ID) at 25 °C?

    The maximum continuous drain current (ID) at 25 °C is 12 A.

  4. What is the gate-source voltage (VGS) range for the STF15N95K5?

    The gate-source voltage (VGS) range is ±30 V.

  5. What technology is used in the STF15N95K5?

    The STF15N95K5 uses SuperMESH™ 5 technology.

  6. What are the key features of the STF15N95K5?

    Key features include ultra-low gate charge, worldwide best RDS(on) and FOM, 100% avalanche tested, and Zener-protected gate.

  7. What are the typical applications for the STF15N95K5?

    Typical applications include power supplies, motor control, high-frequency switching circuits, and industrial and automotive power systems.

  8. What is the operating junction temperature range for the STF15N95K5?

    The operating junction temperature range is -55 to 150 °C.

  9. Is the STF15N95K5 RoHS compliant?
  10. What package types are available for the STF15N95K5?

    The STF15N95K5 is available in TO-220FP, TO-220, and TO-247 packages.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):950 V
Current - Continuous Drain (Id) @ 25°C:12A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:500mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:40 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:900 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):30W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
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In Stock

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Same Series
STP15N95K5
STP15N95K5
MOSFET N-CH 950V 12A TO220
STW15N95K5
STW15N95K5
MOSFET N-CH 950V 12A TO247

Similar Products

Part Number STF15N95K5 STF10N95K5
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 950 V 950 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc) 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 500mOhm @ 6A, 10V 800mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 5V @ 100µA 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 10 V 22 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 900 pF @ 100 V 630 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 30W (Tc) 30W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack

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