STD100N10F7
  • Share:

STMicroelectronics STD100N10F7

Manufacturer No:
STD100N10F7
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N CH 100V 80A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STD100N10F7 is an N-channel Power MOSFET produced by STMicroelectronics, utilizing the advanced STripFET F7 technology. This device is characterized by its enhanced trench gate structure, which results in very low on-state resistance and reduced internal capacitance and gate charge. This design enables faster and more efficient switching, making it suitable for a variety of high-performance applications. The MOSFET is packaged in a TO-252-3 (DPAK) surface mount package, facilitating easy integration into modern electronic systems.

Key Specifications

AttributeValue
FET TypeN-Channel
No of Channels1
Drain-to-Source Voltage [Vdss]100 V
Drain-Source On Resistance-Max [RDS(on)]8 mΩ
Rated Power Dissipation120 W
Gate Charge [Qg]61 nC
Gate-Source Voltage-Max [Vgss]20 V
Drain Current80 A
Turn-on Delay Time27 ns
Turn-off Delay Time46 ns
Rise Time40 ns
Fall Time15 ns
Operating Temp Range-55°C to +175°C
Gate Source Threshold4.5 V
Height - Max2.4 mm
Length6.6 mm
Input Capacitance4369 pF
Package StyleTO-252-3 (DPAK)
Mounting MethodSurface Mount

Key Features

  • Among the lowest RDS(on) on the market, ensuring minimal power loss during operation.
  • Excellent figure of merit (FoM) for high efficiency.
  • Low Crss/Ciss ratio for enhanced EMI immunity.
  • High avalanche ruggedness, providing robustness against transient voltages.

Applications

The STD100N10F7 is designed for various high-performance switching applications, including but not limited to:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Industrial automation and control systems.
  • Renewable energy systems, such as solar and wind power inverters.

Q & A

  1. What is the maximum drain-to-source voltage of the STD100N10F7?
    The maximum drain-to-source voltage is 100 V.
  2. What is the typical on-state resistance of the STD100N10F7?
    The typical on-state resistance is 8 mΩ.
  3. What is the maximum drain current of the STD100N10F7?
    The maximum drain current is 80 A.
  4. What is the package type of the STD100N10F7?
    The package type is TO-252-3 (DPAK).
  5. What is the operating temperature range of the STD100N10F7?
    The operating temperature range is -55°C to +175°C.
  6. What are the key features of the STD100N10F7?
    The key features include low RDS(on), excellent FoM, low Crss/Ciss ratio, and high avalanche ruggedness.
  7. What are some common applications of the STD100N10F7?
    Common applications include power supplies, motor control systems, industrial automation, and renewable energy systems.
  8. What is the gate charge of the STD100N10F7?
    The gate charge is 61 nC.
  9. What is the turn-on delay time of the STD100N10F7?
    The turn-on delay time is 27 ns.
  10. Is the STD100N10F7 RoHS compliant?
    Yes, the STD100N10F7 is RoHS compliant.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:8mOhm @ 40A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:61 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4369 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):120W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

$3.07
249

Please send RFQ , we will respond immediately.

Same Series
STF100N10F7
STF100N10F7
MOSFET N CH 100V 45A TO-220FP
STD100N10F7
STD100N10F7
MOSFET N CH 100V 80A DPAK
STP100N10F7
STP100N10F7
MOSFET N CH 100V 80A TO-220

Related Product By Categories

NTNS3193NZT5G
NTNS3193NZT5G
onsemi
MOSFET N-CH 20V 224MA 3XLLGA
FDMT80040DC
FDMT80040DC
onsemi
MOSFET N-CH 40V 420A 8PQFN
PHT6NQ10T,135
PHT6NQ10T,135
Nexperia USA Inc.
MOSFET N-CH 100V 3A SOT223
PSMN2R0-30YLE,115
PSMN2R0-30YLE,115
Nexperia USA Inc.
MOSFET N-CH 30V 100A LFPAK56
CSD17318Q2
CSD17318Q2
Texas Instruments
MOSFET N-CH 30V 25A 6WSON
STQ1HNK60R-AP
STQ1HNK60R-AP
STMicroelectronics
MOSFET N-CH 600V 400MA TO92-3
PMZB290UNE,315
PMZB290UNE,315
NXP USA Inc.
MOSFET N-CH 20V 1A DFN1006B-3
2N7002BKM,315
2N7002BKM,315
Nexperia USA Inc.
MOSFET N-CH 60V 450MA DFN1006-3
STP80PF55
STP80PF55
STMicroelectronics
MOSFET P-CH 55V 80A TO220AB
STS12NH3LL
STS12NH3LL
STMicroelectronics
MOSFET N-CH 30V 12A 8SO
NTB52N10T4G
NTB52N10T4G
onsemi
MOSFET N-CH 100V 52A D2PAK
NTMFS4834NT1G
NTMFS4834NT1G
onsemi
MOSFET N-CH 30V 13A/130A 5DFN

Related Product By Brand

SATAULC6-2P6
SATAULC6-2P6
STMicroelectronics
TVS DIODE 5VWM 19VC SOT666
STPSC10H12CWL
STPSC10H12CWL
STMicroelectronics
DIODE ARRAY SCHOTTKY 1200V TO247
BTA08-600CWRG
BTA08-600CWRG
STMicroelectronics
TRIAC ALTERNISTOR 600V TO220AB
STGW80H65DFB-4
STGW80H65DFB-4
STMicroelectronics
IGBT BIPO 650V 80A TO247
LM258PT
LM258PT
STMicroelectronics
IC OPAMP GP 2 CIRCUIT 8TSSOP
TSV6290AICT
TSV6290AICT
STMicroelectronics
IC OPAMP GP 1 CIRCUIT SC70-6
TS393IPT
TS393IPT
STMicroelectronics
IC COMPARATOR DUAL MCRPWR 8TSSOP
M95512-WMN6P
M95512-WMN6P
STMicroelectronics
IC EEPROM 512KBIT SPI 16MHZ 8SO
M24C02-WMN6
M24C02-WMN6
STMicroelectronics
IC EEPROM 2KBIT I2C 400KHZ 8SO
M27C256B-90B6
M27C256B-90B6
STMicroelectronics
IC EPROM 256KBIT PARALLEL 28DIP
VNQ5050AKTR-E
VNQ5050AKTR-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO24
LD1085V18
LD1085V18
STMicroelectronics
IC REG LINEAR 1.8V 3A TO220AB