STD100N10F7
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STMicroelectronics STD100N10F7

Manufacturer No:
STD100N10F7
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N CH 100V 80A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The STD100N10F7 is an N-channel Power MOSFET produced by STMicroelectronics, utilizing the advanced STripFET F7 technology. This device is characterized by its enhanced trench gate structure, which results in very low on-state resistance and reduced internal capacitance and gate charge. This design enables faster and more efficient switching, making it suitable for a variety of high-performance applications. The MOSFET is packaged in a TO-252-3 (DPAK) surface mount package, facilitating easy integration into modern electronic systems.

Key Specifications

AttributeValue
FET TypeN-Channel
No of Channels1
Drain-to-Source Voltage [Vdss]100 V
Drain-Source On Resistance-Max [RDS(on)]8 mΩ
Rated Power Dissipation120 W
Gate Charge [Qg]61 nC
Gate-Source Voltage-Max [Vgss]20 V
Drain Current80 A
Turn-on Delay Time27 ns
Turn-off Delay Time46 ns
Rise Time40 ns
Fall Time15 ns
Operating Temp Range-55°C to +175°C
Gate Source Threshold4.5 V
Height - Max2.4 mm
Length6.6 mm
Input Capacitance4369 pF
Package StyleTO-252-3 (DPAK)
Mounting MethodSurface Mount

Key Features

  • Among the lowest RDS(on) on the market, ensuring minimal power loss during operation.
  • Excellent figure of merit (FoM) for high efficiency.
  • Low Crss/Ciss ratio for enhanced EMI immunity.
  • High avalanche ruggedness, providing robustness against transient voltages.

Applications

The STD100N10F7 is designed for various high-performance switching applications, including but not limited to:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Industrial automation and control systems.
  • Renewable energy systems, such as solar and wind power inverters.

Q & A

  1. What is the maximum drain-to-source voltage of the STD100N10F7?
    The maximum drain-to-source voltage is 100 V.
  2. What is the typical on-state resistance of the STD100N10F7?
    The typical on-state resistance is 8 mΩ.
  3. What is the maximum drain current of the STD100N10F7?
    The maximum drain current is 80 A.
  4. What is the package type of the STD100N10F7?
    The package type is TO-252-3 (DPAK).
  5. What is the operating temperature range of the STD100N10F7?
    The operating temperature range is -55°C to +175°C.
  6. What are the key features of the STD100N10F7?
    The key features include low RDS(on), excellent FoM, low Crss/Ciss ratio, and high avalanche ruggedness.
  7. What are some common applications of the STD100N10F7?
    Common applications include power supplies, motor control systems, industrial automation, and renewable energy systems.
  8. What is the gate charge of the STD100N10F7?
    The gate charge is 61 nC.
  9. What is the turn-on delay time of the STD100N10F7?
    The turn-on delay time is 27 ns.
  10. Is the STD100N10F7 RoHS compliant?
    Yes, the STD100N10F7 is RoHS compliant.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:8mOhm @ 40A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:61 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4369 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):120W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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