Overview
The FDMA410NZ is a single N-Channel MOSFET designed by onsemi using their advanced POWERTRENCH process. This device is optimized for low on-resistance (RDS(on)) at a gate-source voltage (VGS) of 1.5 V, making it suitable for a variety of power management and switching applications. The MOSFET is packaged in a WDFN6 2x2, 0.65P (MicroFET 2x2) leadframe, which is Pb-free and halide-free, ensuring environmental compliance.
Key Specifications
| Parameter | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| VDS (Drain to Source Voltage) | - | - | 20 | V | |
| VGS (Gate to Source Voltage) | - | - | ±8 | V | |
| ID (Continuous Drain Current at TA = 25°C) | - | - | 9.5 | A | |
| RDS(on) at VGS = 4.5 V, ID = 9.5 A | - | - | 23 | mΩ | |
| RDS(on) at VGS = 2.5 V, ID = 8.0 A | - | - | 29 | mΩ | |
| RDS(on) at VGS = 1.8 V, ID = 4.0 A | - | - | 36 | mΩ | |
| RDS(on) at VGS = 1.5 V, ID = 2.0 A | - | - | 50 | mΩ | |
| BVDSS (Drain to Source Breakdown Voltage) | ID = 250 μA, VGS = 0 V | - | - | 20 | V |
| td(on) (Turn-On Delay Time) | VDD = 10 V, ID = 9.5 A, VGS = 4.5 V, RGEN = 6 Ω | - | 7.5 | 15 | ns |
| tr (Rise Time) | - | 3.9 | 10 | ns | |
| td(off) (Turn-Off Delay Time) | - | 27 | 44 | ns | |
| tf (Fall Time) | - | 3.7 | 10 | ns | |
| Qg (Total Gate Charge) | VDD = 10 V, ID = 9.5 A, VGS = 4.5 V | - | 10 | 14 | nC |
| RJA (Thermal Resistance, Junction to Ambient) | - | - | 52 / 145 | °C/W |
Key Features
- Low on-resistance (RDS(on)) at VGS = 1.5 V, optimized using onsemi's advanced POWERTRENCH process.
- Maximum RDS(on) of 23 mΩ at VGS = 4.5 V and ID = 9.5 A.
- Maximum RDS(on) of 29 mΩ at VGS = 2.5 V and ID = 8.0 A.
- Maximum RDS(on) of 36 mΩ at VGS = 1.8 V and ID = 4.0 A.
- Maximum RDS(on) of 50 mΩ at VGS = 1.5 V and ID = 2.0 A.
- HBM ESD Protection Level > 2.5 kV.
- High continuous drain current of up to 9.5 A.
- Low turn-on and turn-off delay times.
- Compact WDFN6 2x2, 0.65P (MicroFET 2x2) package, Pb-free and halide-free.
Applications
- Power management in DC-DC converters and switching power supplies.
- Motor control and drive systems.
- High-frequency switching applications.
- Audio amplifiers and other high-power audio equipment.
- Automotive and industrial power systems.
Q & A
- What is the maximum drain to source voltage (VDS) for the FDMA410NZ?
The maximum drain to source voltage (VDS) is 20 V.
- What is the typical on-resistance (RDS(on)) at VGS = 4.5 V and ID = 9.5 A?
The typical on-resistance (RDS(on)) is 23 mΩ.
- What is the HBM ESD protection level for this MOSFET?
The HBM ESD protection level is greater than 2.5 kV.
- What is the maximum continuous drain current (ID) at TA = 25°C?
The maximum continuous drain current (ID) is 9.5 A.
- What is the thermal resistance (RJA) when mounted on a 1 in^2 pad of 2 oz copper?
The thermal resistance (RJA) is 52 °C/W.
- What is the package type and dimensions for the FDMA410NZ?
The package type is WDFN6 2x2, 0.65P (MicroFET 2x2), and it is Pb-free and halide-free.
- What are the typical turn-on and turn-off delay times for this MOSFET?
The typical turn-on delay time (td(on)) is 7.5 ns, and the typical turn-off delay time (td(off)) is 27 ns.
- What is the total gate charge (Qg) at VGS = 4.5 V and ID = 9.5 A?
The total gate charge (Qg) is typically 10 nC.
- In what types of applications is the FDMA410NZ commonly used?
The FDMA410NZ is commonly used in power management, motor control, high-frequency switching, audio amplifiers, and automotive and industrial power systems.
- Is the FDMA410NZ RoHS compliant?
Yes, the FDMA410NZ is Pb-free and halide-free, making it RoHS compliant.
