Overview
The FDMA410NZT is a single N-Channel MOSFET designed by onsemi using their advanced Power Trench process. This device is optimized for low on-resistance (RDS(on)) at a gate-source voltage (VGS) of 1.5 V and features a compact 2 x 2 mm MicroFET package. It is ideal for applications requiring high-speed switching, low saturation voltage, and precise current control.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (VDS) | 20 | V |
| Gate to Source Voltage (VGS) | ±8 | V |
| Continuous Drain Current (ID) | 9.5 | A |
| Pulsed Drain Current (ID) | 63 | A |
| Power Dissipation (PD) at TA = 25°C | 2.4 | W |
| Operating and Storage Junction Temperature Range | -55 to +150 | °C |
| Thermal Resistance, Junction to Ambient (RθJA) | 52 / 145 | °C/W |
| On-Resistance (RDS(on)) at VGS = 4.5 V, ID = 9.5 A | 23 | mΩ |
| On-Resistance (RDS(on)) at VGS = 2.5 V, ID = 8.0 A | 29 | mΩ |
| On-Resistance (RDS(on)) at VGS = 1.8 V, ID = 4.0 A | 36 | mΩ |
Key Features
- 0.55 mm max package height in a 2 x 2 mm MicroFET package
- Low on-resistance (RDS(on)) at various VGS levels: 23 mΩ at VGS = 4.5 V, 29 mΩ at VGS = 2.5 V, and 36 mΩ at VGS = 1.8 V
- High-speed switching capabilities
- Low saturation voltage
- Precise current control
- HBM ESD Protection Level > 2.5 kV
Applications
The FDMA410NZT is suitable for a variety of applications, including but not limited to:
- Power management systems
- DC-DC converters
- Motor control circuits
- High-frequency switching circuits
- Automotive and industrial power electronics
Q & A
- What is the maximum drain to source voltage (VDS) for the FDMA410NZT? The maximum VDS is 20 V.
- What is the maximum continuous drain current (ID) for the FDMA410NZT? The maximum continuous ID is 9.5 A.
- What is the thermal resistance (RθJA) of the FDMA410NZT? The thermal resistance is 52 °C/W and 145 °C/W under different mounting conditions.
- What are the typical on-resistance values for the FDMA410NZT at different VGS levels? The on-resistance is 23 mΩ at VGS = 4.5 V, 29 mΩ at VGS = 2.5 V, and 36 mΩ at VGS = 1.8 V.
- What is the package type and size of the FDMA410NZT? The FDMA410NZT comes in a 2 x 2 mm MicroFET package with a maximum height of 0.55 mm.
- What are the operating and storage temperature ranges for the FDMA410NZT? The operating and storage temperature range is -55 to +150 °C.
- Does the FDMA410NZT have ESD protection? Yes, it has an HBM ESD Protection Level > 2.5 kV.
- What are some typical applications for the FDMA410NZT? It is used in power management systems, DC-DC converters, motor control circuits, high-frequency switching circuits, and automotive and industrial power electronics.
- What is the maximum power dissipation (PD) for the FDMA410NZT at TA = 25°C? The maximum power dissipation is 2.4 W.
- How does the FDMA410NZT perform in terms of high-speed switching? The FDMA410NZT is designed for high-speed switching with low turn-on and turn-off delay times.
