Overview
The STP4NK80Z is a high-voltage N-channel Power MOSFET developed by STMicroelectronics using the advanced SuperMESH technology. This device is optimized from the well-established PowerMESH layout, offering significant improvements in on-resistance and dv/dt capability. The STP4NK80Z is designed for demanding applications, ensuring high performance and reliability. It is packaged in a TO-220 type A package, making it suitable for a variety of high-power switching applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-source voltage (VDS) | 800 | V |
| Gate-source voltage (VGS) | ±30 | V |
| Drain current (continuous) at TC = 25 °C (ID) | 3 | A |
| Drain current (continuous) at TC = 100 °C (ID) | 1.89 | A |
| Drain current (pulsed) (IDM) | 12 | A |
| Total power dissipation at TC = 25 °C (PTOT) | 80 | W |
| On-resistance (RDS(on)) | 3.5 Ω | Ω |
| Gate charge (Qg) | 22.5 nC | nC |
| Thermal resistance, junction-to-case (RthJC) | 1.56 °C/W | °C/W |
| Thermal resistance, junction-to-ambient (RthJA) | 62.5 °C/W | °C/W |
Key Features
- Extremely high dv/dt capability, making it suitable for demanding applications.
- 100% avalanche tested to ensure reliability under high stress conditions.
- Gate charge minimized, reducing switching losses and improving efficiency.
- Very low intrinsic capacitances, which help in reducing switching times and improving overall performance.
- Very good manufacturing repeatability, ensuring consistent performance across devices.
- Zener-protected to enhance robustness against voltage spikes.
Applications
The STP4NK80Z is primarily used in high-voltage switching applications where high reliability and performance are critical. These include:
- Power supplies and converters.
- Motor control and drive systems.
- High-frequency switching circuits.
- Industrial and automotive power management systems.
Q & A
- What is the maximum drain-source voltage of the STP4NK80Z?
The maximum drain-source voltage (VDS) is 800 V.
- What is the typical on-resistance of the STP4NK80Z?
The typical on-resistance (RDS(on)) is 2.7 Ω, with a maximum value of 3.5 Ω.
- What is the continuous drain current rating at 25 °C?
The continuous drain current (ID) at 25 °C is 3 A.
- What is the total power dissipation rating at 25 °C?
The total power dissipation (PTOT) at 25 °C is 80 W.
- What is the gate charge of the STP4NK80Z?
The total gate charge (Qg) is 22.5 nC.
- What is the thermal resistance from junction to case?
The thermal resistance from junction to case (RthJC) is 1.56 °C/W.
- What are the key features of the SuperMESH technology used in the STP4NK80Z?
The SuperMESH technology offers extremely high dv/dt capability, minimized gate charge, very low intrinsic capacitances, and very good manufacturing repeatability.
- Is the STP4NK80Z Zener-protected?
- What are the typical applications of the STP4NK80Z?
The STP4NK80Z is used in high-voltage switching applications such as power supplies, motor control systems, high-frequency switching circuits, and industrial and automotive power management systems.
- What is the package type of the STP4NK80Z?
The STP4NK80Z is packaged in a TO-220 type A package.
