STP7NK80Z
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STMicroelectronics STP7NK80Z

Manufacturer No:
STP7NK80Z
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 800V 5.2A TO220AB
Delivery:
Payment:
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Product Introduction

Overview

The STP7NK80Z is a high-voltage N-channel Power MOSFET from STMicroelectronics, part of the SuperMESH™ series. This device is optimized for high-performance applications, leveraging ST's advanced strip-based PowerMESH™ layout. It is designed to offer low on-resistance, high dv/dt capability, and excellent manufacturing repeatability. The STP7NK80Z is available in various packages including TO-220, TO-220FP, D2PAK, and I2PAK, making it versatile for different design requirements.

Key Specifications

Parameter Value Unit
VDSS (Drain-source voltage) 800 V
VGS (Gate-source voltage) ± 30 V
ID (Drain current, continuous) at TC = 25 °C 5.2 A
ID (Drain current, continuous) at TC = 100 °C 3.3 A
IDM (Drain current, pulsed) 20.8 A
PTOT (Total dissipation) at TC = 25°C 125 (TO-220), 30 (D2PAK, I2PAK) W
RDS(on) (Static drain-source on resistance) < 1.8 Ω
VGS(th) (Gate threshold voltage) 3 - 4.5 V
VSD (Source-drain forward on voltage) 1.6 V

Key Features

  • Extremely high dv/dt capability, making it suitable for demanding applications.
  • 100% avalanche tested for reliability.
  • Gate charge minimized for efficient switching.
  • Very low intrinsic capacitances.
  • Very good manufacturing repeatability.
  • Built-in back-to-back Zener diodes to enhance ESD capability and protect against voltage transients.

Applications

The STP7NK80Z is primarily used in switching applications due to its high voltage and current handling capabilities. It is suitable for various high-power electronic systems, including but not limited to:

  • Power supplies and converters.
  • Motor control and drive systems.
  • High-frequency switching circuits.
  • Aerospace and automotive systems requiring high reliability and performance.

Q & A

  1. What is the maximum drain-source voltage (VDSS) of the STP7NK80Z?

    The maximum drain-source voltage (VDSS) is 800 V.

  2. What are the package options available for the STP7NK80Z?

    The STP7NK80Z is available in TO-220, TO-220FP, D2PAK, and I2PAK packages.

  3. What is the continuous drain current (ID) at 25 °C?

    The continuous drain current (ID) at 25 °C is 5.2 A.

  4. What is the gate-source threshold voltage (VGS(th)) range?

    The gate-source threshold voltage (VGS(th)) range is from 3 V to 4.5 V.

  5. Does the STP7NK80Z have built-in protection against voltage transients?
  6. What is the maximum total dissipation (PTOT) at 25 °C for the TO-220 package?

    The maximum total dissipation (PTOT) at 25 °C for the TO-220 package is 125 W.

  7. What is the static drain-source on resistance (RDS(on))?

    The static drain-source on resistance (RDS(on)) is less than 1.8 Ω.

  8. Is the STP7NK80Z 100% avalanche tested?
  9. What is the source-drain forward on voltage (VSD)?

    The source-drain forward on voltage (VSD) is 1.6 V.

  10. What are some typical applications of the STP7NK80Z?

    Typical applications include power supplies, motor control systems, high-frequency switching circuits, and aerospace and automotive systems.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:5.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.8Ohm @ 2.6A, 10V
Vgs(th) (Max) @ Id:4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:56 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1138 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):125W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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Same Series
STB7NK80ZT4
STB7NK80ZT4
MOSFET N-CH 800V 5.2A D2PAK
STP7NK80ZFP
STP7NK80ZFP
MOSFET N-CH 800V 5.2A TO220FP
STB7NK80Z-1
STB7NK80Z-1
MOSFET N-CH 800V 5.2A I2PAK

Similar Products

Part Number STP7NK80Z STP9NK80Z STP8NK80Z STP4NK80Z STP5NK80Z STP7NK30Z STP7NK40Z
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Obsolete Active Active Active Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V 800 V 800 V 800 V 300 V 400 V
Current - Continuous Drain (Id) @ 25°C 5.2A (Tc) 7.5A (Tc) 6.2A (Tc) 3A (Tc) 4.3A (Tc) 5A (Tc) 5.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 1.8Ohm @ 2.6A, 10V 1.2Ohm @ 3.75A, 10V 1.5Ohm @ 3.1A, 10V 3.5Ohm @ 1.5A, 10V 2.4Ohm @ 2.15A, 10V 900mOhm @ 2.5A, 10V 1Ohm @ 2.7A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 50µA 4.5V @ 100µA 4.5V @ 50µA 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 56 nC @ 10 V 84 nC @ 10 V 46 nC @ 10 V 22.5 nC @ 10 V 45.5 nC @ 10 V 13 nC @ 10 V 26 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1138 pF @ 25 V 1900 pF @ 25 V 1320 pF @ 25 V 575 pF @ 25 V 910 pF @ 25 V 380 pF @ 25 V 535 pF @ 25 V
FET Feature - - - - - - -
Power Dissipation (Max) 125W (Tc) 150W (Tc) 140W (Tc) 80W (Tc) 110W (Tc) 50W (Tc) 70W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

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