STP7NK40Z
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STMicroelectronics STP7NK40Z

Manufacturer No:
STP7NK40Z
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 400V 5.4A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STP7NK40Z is a high-voltage, Zener-protected N-channel Power MOSFET developed by STMicroelectronics using the advanced SuperMESH technology. This device is an optimization of the well-established PowerMESH layout, designed to offer significant reductions in on-resistance and enhanced dv/dt capability. It is particularly suited for demanding applications requiring high performance and reliability. The STP7NK40Z is available in a TO-220 package and is known for its robust electrical characteristics and protective features.

Key Specifications

ParameterValueUnit
Drain-source voltage (VDS)400V
Drain-gate voltage (VDGR)400V
Gate-source voltage (VGS)±30V
Drain current (continuous) at TC = 25 °C (ID)5.4A
Drain current (continuous) at TC = 100 °C (ID)3.4A
Drain current (pulsed) (IDM)21.6A
Total power dissipation at TC = 25 °C (PTOT)70W
Thermal resistance, junction-to-case (RthJC)1.78°C/W
Thermal resistance, junction-to-ambient (RthJA)62.5°C/W
On-resistance (RDS(on))1 Ω (max), 0.85 Ω (typ.)Ω
Gate charge (Qg)19-26 nCnC

Key Features

  • Developed using the SuperMESH technology, an optimization of the PowerMESH layout.
  • Zener-protected to enhance ESD capability and absorb voltage transients.
  • 100% avalanche tested.
  • Gate charge minimized.
  • Very low intrinsic capacitance.
  • High dv/dt capability for demanding applications.

Applications

The STP7NK40Z is primarily used in switching applications where high voltage, low on-resistance, and robust dv/dt capability are required. These include power supplies, motor control systems, and other high-power electronic devices.

Q & A

  1. What is the maximum drain-source voltage of the STP7NK40Z?
    The maximum drain-source voltage (VDS) is 400 V.
  2. What is the typical on-resistance of the STP7NK40Z?
    The typical on-resistance (RDS(on)) is 0.85 Ω.
  3. What is the maximum continuous drain current at 25 °C?
    The maximum continuous drain current (ID) at 25 °C is 5.4 A.
  4. What is the thermal resistance from junction to case (RthJC)?
    The thermal resistance from junction to case (RthJC) is 1.78 °C/W.
  5. Does the STP7NK40Z have built-in Zener diode protection?
    Yes, the STP7NK40Z has built-in back-to-back Zener diodes for gate-source protection.
  6. What are the primary applications of the STP7NK40Z?
    The primary applications include switching applications such as power supplies and motor control systems.
  7. What is the maximum total power dissipation at 25 °C?
    The maximum total power dissipation (PTOT) at 25 °C is 70 W.
  8. What is the storage temperature range for the STP7NK40Z?
    The storage temperature range is -55 to 150 °C.
  9. Is the STP7NK40Z 100% avalanche tested?
    Yes, the STP7NK40Z is 100% avalanche tested.
  10. What package types are available for the STP7NK40Z?
    The STP7NK40Z is available in a TO-220 package.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):400 V
Current - Continuous Drain (Id) @ 25°C:5.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1Ohm @ 2.7A, 10V
Vgs(th) (Max) @ Id:4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:26 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:535 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):70W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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Same Series
STP7NK40Z
STP7NK40Z
MOSFET N-CH 400V 5.4A TO220AB
STP7NK40ZFP
STP7NK40ZFP
MOSFET N-CH 400V 5.4A TO220FP

Similar Products

Part Number STP7NK40Z STP7NK80Z STP5NK40Z STP7NK30Z
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 400 V 800 V 400 V 300 V
Current - Continuous Drain (Id) @ 25°C 5.4A (Tc) 5.2A (Tc) 3A (Tc) 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 1Ohm @ 2.7A, 10V 1.8Ohm @ 2.6A, 10V 1.8Ohm @ 1.5A, 10V 900mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 50µA 4.5V @ 100µA 4.5V @ 50µA 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 26 nC @ 10 V 56 nC @ 10 V 17 nC @ 10 V 13 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 535 pF @ 25 V 1138 pF @ 25 V 305 pF @ 25 V 380 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 70W (Tc) 125W (Tc) 45W (Tc) 50W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220 TO-220 TO-220 TO-220
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3

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