STP7NK40ZFP
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STMicroelectronics STP7NK40ZFP

Manufacturer No:
STP7NK40ZFP
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 400V 5.4A TO220FP
Delivery:
Payment:
iso14001
iso45001
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Product Introduction

Overview

The STP7NK40ZFP is a high-voltage N-channel Power MOSFET developed by STMicroelectronics using the advanced SuperMESH™ technology. This device is designed to offer high performance and reliability in various power switching applications. It features a drain-source voltage (VDS) of 400 V, a typical on-resistance (RDS(on)) of 0.85 Ω, and a continuous drain current (ID) of 5.4 A at 25°C. The STP7NK40ZFP is available in the TO-220FP package, making it suitable for applications requiring high power handling and efficient thermal management.

Key Specifications

ParameterValueUnit
Drain-Source Voltage (VDS)400V
Drain-Gate Voltage (VDGR)400V
Gate-Source Voltage (VGS)±30V
Continuous Drain Current (ID) at 25°C5.4A
Continuous Drain Current (ID) at 100°C3.4A
Pulsed Drain Current (IDM)21.6A
Total Power Dissipation (PTOT) at 25°C25W
Thermal Resistance Junction-Case (Rthj-case)5°C/W
Operating Junction Temperature Range (TJ)-55 to 150°C
Storage Temperature Range (Tstg)-55 to 150°C

Key Features

  • Zener-protected to enhance ESD performance and eliminate the need for additional external components.
  • 100% avalanche tested for reliability in high-stress applications.
  • Gate charge minimized to reduce switching losses.
  • Very low intrinsic capacitance for improved high-frequency performance.
  • Extremely high dv/dt capability for demanding applications.
  • High level of thermal management with the TO-220FP package.

Applications

The STP7NK40ZFP is ideal for various high-voltage switching applications, including:

  • Flyback converters
  • LED lighting systems
  • Power supplies
  • Motor control systems
  • Other high-power switching applications requiring high reliability and efficiency.

Q & A

  1. What is the maximum drain-source voltage of the STP7NK40ZFP?
    The maximum drain-source voltage (VDS) is 400 V.
  2. What is the typical on-resistance (RDS(on)) of the STP7NK40ZFP?
    The typical on-resistance (RDS(on)) is 0.85 Ω.
  3. What is the continuous drain current (ID) at 25°C for the STP7NK40ZFP?
    The continuous drain current (ID) at 25°C is 5.4 A.
  4. What is the total power dissipation (PTOT) at 25°C for the STP7NK40ZFP?
    The total power dissipation (PTOT) at 25°C is 25 W.
  5. What package type is the STP7NK40ZFP available in?
    The STP7NK40ZFP is available in the TO-220FP package.
  6. Is the STP7NK40ZFP 100% avalanche tested?
    Yes, the STP7NK40ZFP is 100% avalanche tested.
  7. What is the operating junction temperature range of the STP7NK40ZFP?
    The operating junction temperature range is -55 to 150°C.
  8. What is the storage temperature range of the STP7NK40ZFP?
    The storage temperature range is -55 to 150°C.
  9. Does the STP7NK40ZFP have built-in Zener diodes for ESD protection?
    Yes, the STP7NK40ZFP has built-in back-to-back Zener diodes for enhanced ESD performance.
  10. What are some typical applications of the STP7NK40ZFP?
    Typical applications include flyback converters, LED lighting systems, power supplies, and motor control systems.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):400 V
Current - Continuous Drain (Id) @ 25°C:5.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1Ohm @ 2.7A, 10V
Vgs(th) (Max) @ Id:4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:26 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:535 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):25W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
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Same Series
STP7NK40Z
STP7NK40Z
MOSFET N-CH 400V 5.4A TO220AB
STP7NK40ZFP
STP7NK40ZFP
MOSFET N-CH 400V 5.4A TO220FP

Similar Products

Part Number STP7NK40ZFP STP7NK80ZFP
Manufacturer STMicroelectronics STMicroelectronics
Product Status Obsolete Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 400 V 800 V
Current - Continuous Drain (Id) @ 25°C 5.4A (Tc) 5.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 1Ohm @ 2.7A, 10V 1.8Ohm @ 2.6A, 10V
Vgs(th) (Max) @ Id 4.5V @ 50µA 4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 26 nC @ 10 V 56 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 535 pF @ 25 V 1138 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 25W (Tc) 30W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack

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