STP4NK50ZD
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STMicroelectronics STP4NK50ZD

Manufacturer No:
STP4NK50ZD
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 500V 3A TO220AB
Delivery:
Payment:
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Product Introduction

Overview

The STP4NK50ZD is a high-performance N-channel Power MOSFET produced by STMicroelectronics. This device is part of the SuperMESH™ series, known for its advanced technology that combines reduced on-resistance, Zener gate protection, and outstanding dv/dt capability. The STP4NK50ZD is available in the TO-220 package and is designed for high-efficiency switching applications.

This MOSFET features a built-in fast body-drain recovery diode and integrated back-to-back Zener diodes to enhance ESD capability and protect against voltage transients. It is suitable for a wide range of applications requiring high reliability and efficiency.

Key Specifications

Parameter Value Unit
VDS (Drain-source voltage) 500 V
VDGR (Drain-gate voltage) 500 V
VGS (Gate-source voltage) ±30 V
ID (Continuous drain current at TC = 25°C) 3 A
IDM (Pulsed drain current) 12 A
PTOT (Total dissipation at TC = 25°C) 45 W
RDS(on) (Static drain-source on resistance) < 2.7 Ω
VGS(th) (Gate threshold voltage) 2.5 - 4.5 V
TJ (Operating junction temperature) -55 to 150 °C
Rthj-case (Thermal resistance junction-case) 2.78 °C/W

Key Features

  • 100% avalanche tested
  • Extremely high dv/dt capability
  • Gate charge minimized
  • Very low intrinsic capacitances
  • Very good manufacturing repeatability
  • Built-in fast body-drain recovery diode
  • Integrated back-to-back Zener diodes for enhanced ESD capability and voltage transient protection

Applications

The STP4NK50ZD is designed for various high-efficiency switching applications, including:

  • Power supplies and DC-DC converters
  • Motor control and drives
  • Audio amplifiers and other high-power audio equipment
  • Industrial control and automation systems
  • Automotive systems requiring high reliability and efficiency

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STP4NK50ZD?

    The maximum drain-source voltage (VDS) is 500 V.

  2. What is the continuous drain current (ID) at TC = 25°C?

    The continuous drain current (ID) at TC = 25°C is 3 A.

  3. What is the total dissipation (PTOT) at TC = 25°C?

    The total dissipation (PTOT) at TC = 25°C is 45 W.

  4. What is the static drain-source on resistance (RDS(on))?

    The static drain-source on resistance (RDS(on)) is less than 2.7 Ω.

  5. What is the gate threshold voltage (VGS(th)) range?

    The gate threshold voltage (VGS(th)) range is 2.5 to 4.5 V.

  6. What is the operating junction temperature (TJ) range?

    The operating junction temperature (TJ) range is -55 to 150 °C.

  7. What is the thermal resistance junction-case (Rthj-case)?

    The thermal resistance junction-case (Rthj-case) is 2.78 °C/W.

  8. What are the key features of the built-in diodes in the STP4NK50ZD?

    The built-in diodes include a fast body-drain recovery diode and integrated back-to-back Zener diodes for enhanced ESD capability and voltage transient protection.

  9. What are some common applications for the STP4NK50ZD?

    Common applications include power supplies, DC-DC converters, motor control, audio amplifiers, industrial control systems, and automotive systems.

  10. Is the STP4NK50ZD available in different packages?

    Yes, the STP4NK50ZD is available in the TO-220 package, among others in the same series.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.7Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id:4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:12 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:310 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):45W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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Similar Products

Part Number STP4NK50ZD STP4NK50Z
Manufacturer STMicroelectronics STMicroelectronics
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V
Current - Continuous Drain (Id) @ 25°C 3A (Tc) 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 2.7Ohm @ 1.5A, 10V 2.7Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 50µA 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V 12 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 310 pF @ 25 V 310 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 45W (Tc) 45W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220 TO-220
Package / Case TO-220-3 TO-220-3

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