STN1NK60Z
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STMicroelectronics STN1NK60Z

Manufacturer No:
STN1NK60Z
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 600V 300MA SOT223
Delivery:
Payment:
iso14001
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Product Introduction

Overview

The STN1NK60Z is a high-performance N-channel power MOSFET produced by STMicroelectronics. This device is part of the SuperMESH series, which is known for its optimized strip-based PowerMESH layout. The STN1NK60Z offers a combination of low on-resistance and high dv/dt capability, making it suitable for demanding applications. It is available in the SOT-223 package and features Zener protection for enhanced reliability.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)600 V
RDS(on) (On-Resistance)13 Ω (typical)
ID (Drain Current)0.3 A (continuous), 0.8 A (pulsed)
PackageSOT-223
Zener ProtectionYes

Key Features

  • Low on-resistance (RDS(on)) of 13 Ω (typical)
  • High dv/dt capability for demanding applications
  • Zener protection for enhanced reliability
  • SuperMESH technology for optimized performance
  • Available in SOT-223 package for compact design

Applications

The STN1NK60Z is suitable for a variety of high-power applications, including but not limited to:

  • Power supplies and DC-DC converters
  • Motor control and drive systems
  • Industrial automation and control systems
  • Aerospace and defense systems
  • Automotive systems requiring high reliability and performance

Q & A

  1. What is the maximum drain-source voltage of the STN1NK60Z?
    The maximum drain-source voltage (VDS) is 600 V.
  2. What is the typical on-resistance of the STN1NK60Z?
    The typical on-resistance (RDS(on)) is 13 Ω.
  3. What is the continuous drain current rating of the STN1NK60Z?
    The continuous drain current (ID) is 0.3 A.
  4. Does the STN1NK60Z have Zener protection?
    Yes, the STN1NK60Z features Zener protection for enhanced reliability.
  5. In which package is the STN1NK60Z available?
    The STN1NK60Z is available in the SOT-223 package.
  6. What technology is used in the STN1NK60Z?
    The STN1NK60Z uses SuperMESH technology for optimized performance.
  7. What are some typical applications for the STN1NK60Z?
    Typical applications include power supplies, motor control systems, industrial automation, aerospace, and automotive systems.
  8. What is the significance of high dv/dt capability in the STN1NK60Z?
    High dv/dt capability ensures the device can handle rapid voltage changes, making it suitable for demanding applications.
  9. Where can I purchase the STN1NK60Z?
    The STN1NK60Z can be purchased from the STMicroelectronics online store, as well as from authorized distributors like Digi-Key and Farnell.
  10. What is the standard lead time for the STN1NK60Z?
    The standard lead time for the STN1NK60Z is 13 weeks.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:300mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:15Ohm @ 400mA, 10V
Vgs(th) (Max) @ Id:4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:6.9 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:94 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.3W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223
Package / Case:TO-261-4, TO-261AA
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In Stock

$0.90
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Same Series
STQ1NK60ZR-AP
STQ1NK60ZR-AP
MOSFET N-CH 600V 300MA TO92-3
STN1NK60ZL
STN1NK60ZL
MOSFET N-CH 600V 300MA SOT223

Similar Products

Part Number STN1NK60Z STN1NK80Z
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 800 V
Current - Continuous Drain (Id) @ 25°C 300mA (Tc) 250mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 15Ohm @ 400mA, 10V 16Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 50µA 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 6.9 nC @ 10 V 7.7 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 94 pF @ 25 V 160 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 3.3W (Tc) 2.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-223 SOT-223
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA

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