STN1NK60ZL
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STMicroelectronics STN1NK60ZL

Manufacturer No:
STN1NK60ZL
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 600V 300MA SOT223
Delivery:
Payment:
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Product Introduction

Overview

The STN1NK60ZL is a high-voltage N-channel Power MOSFET developed by STMicroelectronics using the advanced SuperMESH™ technology. This device is designed to offer high performance and reliability in various power management applications. It features a robust design and is packaged in a SOT-223 surface mount package, making it suitable for a wide range of industrial and consumer electronics.

Key Specifications

Parameter Value
VDS (Drain-Source Voltage) 600 V
ID (Drain Current) 0.44 A (Tc)
RDS(on) (On-State Resistance) 10 Ohm (typ.)
PD (Power Dissipation) 3.3 W (Tc)
Package SOT-223

Key Features

  • SuperMESH™ Technology: Optimized for high performance and low on-state resistance.
  • Zener Protection: Built-in Zener diodes for enhanced protection against voltage spikes.
  • High Voltage Capability: Rated for 600 V drain-source voltage.
  • Compact Package: SOT-223 surface mount package for efficient board space utilization.
  • Low On-State Resistance: Typical RDS(on) of 10 Ohm for efficient power handling.

Applications

  • Power Supplies: Suitable for use in switching power supplies, DC-DC converters, and AC-DC converters.
  • Motor Control: Used in motor drive applications due to its high voltage and current handling capabilities.
  • Industrial Automation: Ideal for various industrial automation and control systems.
  • Consumer Electronics: Applicable in high-power consumer electronics such as audio amplifiers and power tools.

Q & A

  1. What is the maximum drain-source voltage of the STN1NK60ZL?

    The maximum drain-source voltage (VDS) is 600 V.

  2. What is the typical on-state resistance of the STN1NK60ZL?

    The typical on-state resistance (RDS(on)) is 10 Ohm.

  3. What is the maximum drain current of the STN1NK60ZL?

    The maximum drain current (ID) is 0.44 A (at Tc).

  4. What package type is the STN1NK60ZL available in?

    The STN1NK60ZL is available in a SOT-223 surface mount package.

  5. Does the STN1NK60ZL have built-in protection features?

    Yes, it has built-in Zener protection for enhanced reliability.

  6. What are some common applications of the STN1NK60ZL?

    Common applications include power supplies, motor control, industrial automation, and high-power consumer electronics.

  7. What is the power dissipation capability of the STN1NK60ZL?

    The power dissipation (PD) is 3.3 W (at Tc).

  8. Is the STN1NK60ZL suitable for high-frequency applications?

    Yes, it is suitable due to its low on-state resistance and high voltage capability.

  9. Where can I find detailed specifications for the STN1NK60ZL?

    Detailed specifications can be found on the STMicroelectronics official website and through distributors like Digi-Key.

  10. What is the SuperMESH™ technology used in the STN1NK60ZL?

    SuperMESH™ technology is an optimization of the well-established MOSFET technology, offering high performance and low on-state resistance.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:300mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:15Ohm @ 400mA, 10V
Vgs(th) (Max) @ Id:4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:6.9 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:94 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.3W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223
Package / Case:TO-261-4, TO-261AA
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