Overview
The STQ1NK60ZR-AP is a Zener-Protected SuperMESH™ Power MOSFET produced by STMicroelectronics. This device is part of the SuperMESH™ series, which is optimized from ST's established strip-based PowerMESH™ layout. It is designed to offer high performance in high-voltage applications, with a focus on low on-resistance and high dv/dt capability. The STQ1NK60ZR-AP is available in the TO-251 (IPAK) package and is suitable for various switching applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Breakdown Voltage (VBR(DSS)) | 600 | V |
| Static Drain-Source On Resistance (RDS(on)) | < 15 | Ω |
| Continuous Drain Current (ID) | 0.3 | A |
| Power Dissipation (Pw) | 3 | W |
| Gate Threshold Voltage (VGS(th)) | 3 - 4.5 | V |
| Gate Body Leakage Current (IGSS) | ±10 | µA |
| Turn-on Delay Time (td(on)) | 5.5 - 13 | ns |
| Rise Time (tr) | 5 - 13 | ns |
| Turn-off Delay Time (td(off)) | 5 - 13 | ns |
| Fall Time (tf) | 13 - 28 | ns |
Key Features
- 100% avalanche tested
- Extremely high dv/dt capability
- Gate charge minimized
- Improved ESD capability
- New high voltage benchmark
- Zener protection for enhanced reliability
- Available in ECOPACK® packages with Lead-free second level interconnect
Applications
The STQ1NK60ZR-AP is primarily used in switching applications, including but not limited to:
- Power supplies and DC-DC converters
- Motor control and drive systems
- High-frequency switching circuits
- Industrial and automotive electronics
Q & A
- What is the drain-source breakdown voltage of the STQ1NK60ZR-AP?
The drain-source breakdown voltage (VBR(DSS)) is 600V.
- What is the static drain-source on resistance (RDS(on)) of this MOSFET?
The static drain-source on resistance is less than 15Ω.
- What is the continuous drain current (ID) rating for this device?
The continuous drain current rating is 0.3A.
- What is the gate threshold voltage range for the STQ1NK60ZR-AP?
The gate threshold voltage (VGS(th)) ranges from 3V to 4.5V.
- What are the typical turn-on and turn-off times for this MOSFET?
The turn-on delay time (td(on)) and turn-off delay time (td(off)) are typically between 5.5ns and 13ns each.
- Does the STQ1NK60ZR-AP have any special protection features?
Yes, it has Zener protection for enhanced reliability.
- In what package types is the STQ1NK60ZR-AP available?
The STQ1NK60ZR-AP is available in the TO-251 (IPAK) package.
- What are the environmental benefits of the ECOPACK® packaging?
The ECOPACK® packages have a Lead-free second level interconnect, meeting environmental requirements.
- What are some common applications for the STQ1NK60ZR-AP?
Common applications include power supplies, DC-DC converters, motor control systems, and high-frequency switching circuits.
- How does the SuperMESH™ technology benefit this MOSFET?
The SuperMESH™ technology optimizes the device for low on-resistance and high dv/dt capability, making it suitable for demanding applications.
