Overview
The BCP68E6327 is an NPN medium power transistor manufactured by Infineon Technologies. This transistor is housed in a SOT223 (SC-73) package, which is a plastic surface-mounted package designed for good heat transfer with a collector pad. It is part of the BCP68 series, known for its reliability and performance in various electronic applications.
Key Specifications
Parameter | Conditions | Min. | Typ. | Max. | Unit |
---|---|---|---|---|---|
VCBO (Collector-Base Voltage) | Open Emitter | - | - | 32 | V |
VCEO (Collector-Emitter Voltage) | Open Base | - | - | 20 | V |
VEBO (Emitter-Base Voltage) | Open Collector | - | - | 5 | V |
IC (Collector Current DC) | - | - | - | 1 | A |
ICM (Peak Collector Current) | - | - | - | 2 | A |
IBM (Peak Base Current) | - | - | - | 200 | mA |
Ptot (Total Power Dissipation) | Tamb ≤25 °C; notes 1 and 2 | - | - | 0.625 | W |
Tstg (Storage Temperature) | - | -65 | - | +150 | °C |
Tj (Junction Temperature) | - | - | - | 150 | °C |
Tamb (Operating Ambient Temperature) | - | -65 | - | +150 | °C |
Key Features
- NPN Medium Power Transistor: Suitable for applications requiring medium power handling.
- SOT223 Package: Compact surface-mount package with a collector pad for efficient heat transfer.
- High Current Gain: The transistor has a high DC current gain, making it suitable for amplifier and switching applications.
- Low Saturation Voltage: The collector-emitter saturation voltage (VCEsat) is low, which is beneficial for reducing power losses.
- Rugged Construction: The device is mounted on a FR4 printed-circuit board with single-sided copper and tinplated standard footprint for reliability.
Applications
The BCP68E6327 transistor is versatile and can be used in a variety of applications, including:
- Amplifier Circuits: Due to its high current gain and low saturation voltage, it is suitable for amplifier circuits.
- Switching Circuits: Its ability to handle medium power makes it a good choice for switching applications.
- Power Management: It can be used in power management circuits where medium power handling is required.
- Automotive and Industrial Electronics: Its robust construction and wide operating temperature range make it suitable for use in automotive and industrial electronics.
Q & A
- What is the package type of the BCP68E6327 transistor?
The BCP68E6327 transistor is housed in a SOT223 (SC-73) package. - What is the maximum collector-emitter voltage (VCEO) of the BCP68E6327?
The maximum collector-emitter voltage (VCEO) is 20 V. - What is the maximum collector current (IC) of the BCP68E6327?
The maximum collector current (IC) is 1 A. - What is the typical DC current gain (hFE) of the BCP68E6327?
The typical DC current gain (hFE) is between 50 and 375, depending on the operating conditions. - What is the collector-emitter saturation voltage (VCEsat) of the BCP68E6327?
The collector-emitter saturation voltage (VCEsat) is approximately 500 mV. - What is the operating ambient temperature range of the BCP68E6327?
The operating ambient temperature range is from -65°C to +150°C. - Is the BCP68E6327 RoHS compliant?
Yes, the BCP68E6327 is RoHS compliant. - What are some common applications of the BCP68E6327 transistor?
Common applications include amplifier circuits, switching circuits, power management, and use in automotive and industrial electronics. - What is the peak collector current (ICM) of the BCP68E6327?
The peak collector current (ICM) is 2 A. - What is the storage temperature range of the BCP68E6327?
The storage temperature range is from -65°C to +150°C.