BCP68E6327
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Infineon Technologies BCP68E6327

Manufacturer No:
BCP68E6327
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
POWER BIPOLAR TRANSISTOR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCP68E6327 is an NPN medium power transistor manufactured by Infineon Technologies. This transistor is housed in a SOT223 (SC-73) package, which is a plastic surface-mounted package designed for good heat transfer with a collector pad. It is part of the BCP68 series, known for its reliability and performance in various electronic applications.

Key Specifications

ParameterConditionsMin.Typ.Max.Unit
VCBO (Collector-Base Voltage)Open Emitter--32V
VCEO (Collector-Emitter Voltage)Open Base--20V
VEBO (Emitter-Base Voltage)Open Collector--5V
IC (Collector Current DC)---1A
ICM (Peak Collector Current)---2A
IBM (Peak Base Current)---200mA
Ptot (Total Power Dissipation)Tamb ≤25 °C; notes 1 and 2--0.625W
Tstg (Storage Temperature)--65-+150°C
Tj (Junction Temperature)---150°C
Tamb (Operating Ambient Temperature)--65-+150°C

Key Features

  • NPN Medium Power Transistor: Suitable for applications requiring medium power handling.
  • SOT223 Package: Compact surface-mount package with a collector pad for efficient heat transfer.
  • High Current Gain: The transistor has a high DC current gain, making it suitable for amplifier and switching applications.
  • Low Saturation Voltage: The collector-emitter saturation voltage (VCEsat) is low, which is beneficial for reducing power losses.
  • Rugged Construction: The device is mounted on a FR4 printed-circuit board with single-sided copper and tinplated standard footprint for reliability.

Applications

The BCP68E6327 transistor is versatile and can be used in a variety of applications, including:

  • Amplifier Circuits: Due to its high current gain and low saturation voltage, it is suitable for amplifier circuits.
  • Switching Circuits: Its ability to handle medium power makes it a good choice for switching applications.
  • Power Management: It can be used in power management circuits where medium power handling is required.
  • Automotive and Industrial Electronics: Its robust construction and wide operating temperature range make it suitable for use in automotive and industrial electronics.

Q & A

  1. What is the package type of the BCP68E6327 transistor?
    The BCP68E6327 transistor is housed in a SOT223 (SC-73) package.
  2. What is the maximum collector-emitter voltage (VCEO) of the BCP68E6327?
    The maximum collector-emitter voltage (VCEO) is 20 V.
  3. What is the maximum collector current (IC) of the BCP68E6327?
    The maximum collector current (IC) is 1 A.
  4. What is the typical DC current gain (hFE) of the BCP68E6327?
    The typical DC current gain (hFE) is between 50 and 375, depending on the operating conditions.
  5. What is the collector-emitter saturation voltage (VCEsat) of the BCP68E6327?
    The collector-emitter saturation voltage (VCEsat) is approximately 500 mV.
  6. What is the operating ambient temperature range of the BCP68E6327?
    The operating ambient temperature range is from -65°C to +150°C.
  7. Is the BCP68E6327 RoHS compliant?
    Yes, the BCP68E6327 is RoHS compliant.
  8. What are some common applications of the BCP68E6327 transistor?
    Common applications include amplifier circuits, switching circuits, power management, and use in automotive and industrial electronics.
  9. What is the peak collector current (ICM) of the BCP68E6327?
    The peak collector current (ICM) is 2 A.
  10. What is the storage temperature range of the BCP68E6327?
    The storage temperature range is from -65°C to +150°C.

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):- 
Voltage - Collector Emitter Breakdown (Max):- 
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Power - Max:- 
Frequency - Transition:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
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Similar Products

Part Number BCP68E6327 BCP69E6327
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
Transistor Type - -
Current - Collector (Ic) (Max) - -
Voltage - Collector Emitter Breakdown (Max) - -
Vce Saturation (Max) @ Ib, Ic - -
Current - Collector Cutoff (Max) - -
DC Current Gain (hFE) (Min) @ Ic, Vce - -
Power - Max - -
Frequency - Transition - -
Operating Temperature - -
Mounting Type - -
Package / Case - -
Supplier Device Package - -

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