BC850C_R1_00001
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Panjit International Inc. BC850C_R1_00001

Manufacturer No:
BC850C_R1_00001
Manufacturer:
Panjit International Inc.
Package:
Tape & Reel (TR)
Description:
TRANS NPN 45V 0.1A SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC850C_R1_00001 is a bipolar junction transistor (BJT) manufactured by Panjit International Inc. This NPN transistor is designed for general-purpose applications, offering a balance of current handling, voltage tolerance, and switching speed. It is packaged in the SOT-23-3 format, making it suitable for surface mount technology (SMT) and compact electronic designs.

Key Specifications

Parameter Value
Manufacturer Panjit International Inc.
Package SOT-23-3, TO-236-3, SC-59
Transistor Type NPN
Collector-Emitter Voltage (Vce(max)) 45 V
Collector Current (Ic(max)) 100 mA
Power Dissipation (Pd) 0.25 W
Junction Temperature (Tj) -55°C to 150°C
Transition Frequency (fT) 100 MHz
RoHS Compliance Yes
AEC-Q101 Qualification Yes

Key Features

  • General Purpose NPN Transistor: Suitable for a wide range of applications including switching and amplification.
  • Compact Package: SOT-23-3 package allows for space-efficient designs.
  • High Voltage Tolerance: Maximum collector-emitter voltage of 45 V.
  • Low Current Consumption: Maximum collector current of 100 mA.
  • High Transition Frequency: 100 MHz, making it suitable for high-frequency applications.
  • RoHS and AEC-Q101 Compliant: Ensures environmental compliance and automotive reliability standards.

Applications

  • Automotive Electronics: Suitable for various automotive applications due to AEC-Q101 qualification.
  • Consumer Electronics: Used in audio amplifiers, switching circuits, and other general-purpose electronic devices.
  • Industrial Control Systems: Can be used in control circuits, sensors, and other industrial automation components.
  • Communication Devices: Applicable in communication equipment for signal processing and amplification.

Q & A

  1. What is the maximum collector-emitter voltage of the BC850C_R1_00001 transistor?

    The maximum collector-emitter voltage (Vce(max)) is 45 V.

  2. What is the maximum collector current of the BC850C_R1_00001 transistor?

    The maximum collector current (Ic(max)) is 100 mA.

  3. What package types are available for the BC850C_R1_00001 transistor?

    The transistor is available in SOT-23-3, TO-236-3, and SC-59 packages.

  4. Is the BC850C_R1_00001 transistor RoHS compliant?

    Yes, the transistor is RoHS compliant.

  5. What is the transition frequency of the BC850C_R1_00001 transistor?

    The transition frequency (fT) is 100 MHz.

  6. What is the junction temperature range of the BC850C_R1_00001 transistor?

    The junction temperature range is -55°C to 150°C.

  7. Is the BC850C_R1_00001 transistor qualified to AEC-Q101 standards?

    Yes, the transistor is qualified to AEC-Q101 standards.

  8. What are some common applications of the BC850C_R1_00001 transistor?

    Common applications include automotive electronics, consumer electronics, industrial control systems, and communication devices.

  9. What is the power dissipation of the BC850C_R1_00001 transistor?

    The power dissipation (Pd) is 0.25 W.

  10. Where can I find the datasheet for the BC850C_R1_00001 transistor?

    The datasheet can be downloaded from the manufacturer's website or from authorized distributors like Avaq and Mouser Electronics.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:420 @ 2mA, 5V
Power - Max:330 mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23
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Similar Products

Part Number BC850C_R1_00001 BC850B_R1_00001 BC850CW_R1_00001
Manufacturer Panjit International Inc. Panjit International Inc. Panjit International Inc.
Product Status Active Active Active
Transistor Type NPN NPN NPN
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA, 5V 200 @ 2mA, 5V 420 @ 2mA, 5V
Power - Max 330 mW 330 mW 250 mW
Frequency - Transition 100MHz 100MHz 100MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323
Supplier Device Package SOT-23 SOT-23 SOT-323

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