Overview
The BC850CW_R1_00001 is a general-purpose NPN bipolar junction transistor (BJT) manufactured by Panjit International Inc. This transistor is designed for a wide range of applications requiring low to medium power amplification and switching. It is packaged in a surface-mount SOT-323 format, making it suitable for modern electronic designs where space efficiency is crucial.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Base Breakdown Voltage (VCBO) | 50 | V |
| Collector-Emitter Breakdown Voltage (V(BR)CEO) | 45 | V |
| Emitter-Base Breakdown Voltage (VEBO) | 5 | V |
| DC Current Gain (hFE) | 420 - 800 | - |
| Collector Cut-off Current (ICBO) | -15 nA | - |
| Emitter Cut-off Current (IEBO) | -100 nA | - |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 0.25 V (IC = 10mA, IB = 0.5mA), 0.60 V (IC = 100mA, IB = 5mA) | V |
| Transition Frequency (fT) | 100 MHz | MHz |
| Base-Emitter Voltage (VBE) | 0.58 - 0.70 V (VCE = 5V, IC = 2mA) | V |
| Collector Output Capacitance (Cob) | 4.50 pF (VCB = 10V, IE = 0, f = 1MHz) | pF |
| Peak Collector Current (ICM) | 0.2 A | A |
| Junction Temperature Range (TJ) | -55 to +150 °C | °C |
| Storage Temperature Range (TSTG) | -55 to +150 °C | °C |
| Power Dissipation (Pd) | 250 mW | mW |
Key Features
- General-purpose NPN bipolar junction transistor
- Surface-mount SOT-323 package for compact designs
- High DC current gain (hFE) of 420 to 800
- Low collector-emitter saturation voltage (VCE(sat)) of 0.25 V to 0.60 V
- Transition frequency (fT) of 100 MHz for high-frequency applications
- Wide junction and storage temperature ranges (-55 to +150 °C)
- Low power dissipation of 250 mW
Applications
The BC850CW_R1_00001 transistor is suitable for a variety of applications, including:
- General-purpose amplification and switching circuits
- Audio amplifiers and pre-amplifiers
- Automotive and industrial control systems
- Consumer electronics such as TVs, radios, and other audio equipment
- Power supplies and voltage regulators
Q & A
- What is the collector-base breakdown voltage of the BC850CW_R1_00001 transistor?
The collector-base breakdown voltage (VCBO) is 50 V. - What is the maximum collector-emitter breakdown voltage for this transistor?
The maximum collector-emitter breakdown voltage (V(BR)CEO) is 45 V. - What is the typical DC current gain (hFE) of the BC850CW_R1_00001 transistor?
The typical DC current gain (hFE) ranges from 420 to 800. - What is the transition frequency (fT) of this transistor?
The transition frequency (fT) is 100 MHz. - What is the maximum power dissipation of the BC850CW_R1_00001 transistor?
The maximum power dissipation is 250 mW. - What is the package type of the BC850CW_R1_00001 transistor?
The transistor is packaged in a surface-mount SOT-323 format. - What are the junction and storage temperature ranges for this transistor?
The junction and storage temperature ranges are -55 to +150 °C. - What are some common applications of the BC850CW_R1_00001 transistor?
Common applications include general-purpose amplification and switching circuits, audio amplifiers, automotive and industrial control systems, and consumer electronics. - What is the collector-emitter saturation voltage (VCE(sat)) of the BC850CW_R1_00001 transistor?
The collector-emitter saturation voltage (VCE(sat)) is 0.25 V (IC = 10mA, IB = 0.5mA) and 0.60 V (IC = 100mA, IB = 5mA). - Where can I find detailed specifications for the BC850CW_R1_00001 transistor?
Detailed specifications can be found in the datasheet available on websites such as Digi-Key, Mouser, and the manufacturer's official website.
