BC856BDW1T3
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onsemi BC856BDW1T3

Manufacturer No:
BC856BDW1T3
Manufacturer:
onsemi
Package:
Bulk
Description:
TRANS PNP DUAL 65V 100MA SOT-363
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC856BDW1T3 is a dual general-purpose PNP transistor produced by onsemi. It is designed for a wide range of applications requiring low power and high reliability. The transistor is housed in the SOT-363 (SC-88) package, which is a surface-mount type, making it suitable for modern electronic designs where space is a constraint.

This transistor series is known for its robust electrical characteristics, including high DC current gain and low collector-emitter saturation voltage, making it ideal for amplifier and switching applications.

Key Specifications

Characteristic Symbol Min Typ Max Unit
Collector-Base Breakdown Voltage V(BR)CBO -80 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO -65 - - V
Emitter-Base Breakdown Voltage V(BR)EBO -5.0 - - V
Collector Cutoff Current ICBO - - 15 nA A
DC Current Gain hFE 220 - 475 -
Collector-Emitter Saturation Voltage VCE(sat) - - 0.3 V V
Base-Emitter Saturation Voltage VBE(sat) - - 0.7 V V
Current-Gain Bandwidth Product fT - - 100 MHz -

Key Features

  • High DC Current Gain: The BC856BDW1T3 offers a high DC current gain (hFE) ranging from 220 to 475, making it suitable for amplifier applications.
  • Low Collector-Emitter Saturation Voltage: The transistor has a low VCE(sat) of up to 0.3 V, which is beneficial for reducing power consumption in switching applications.
  • Compact Package: The SOT-363 (SC-88) package is designed for low power surface mount applications, making it ideal for space-constrained designs.
  • Robust Breakdown Voltages: High collector-base, collector-emitter, and emitter-base breakdown voltages ensure the transistor can handle a variety of operating conditions.
  • Low Noise Figure: The transistor has a noise figure of up to 10 dB, which is important for applications requiring low noise levels.

Applications

  • General Purpose Amplifiers: The BC856BDW1T3 is designed for general-purpose amplifier applications, including audio amplifiers and signal processing circuits.
  • Switching Circuits: Its low collector-emitter saturation voltage and high current gain make it suitable for switching applications such as power supplies and motor control circuits.
  • Automotive Electronics: The robust electrical characteristics of the transistor make it a good choice for automotive electronics where reliability and durability are crucial.
  • Consumer Electronics: It can be used in various consumer electronic devices such as TVs, radios, and other audio equipment.

Q & A

  1. What is the package type of the BC856BDW1T3 transistor?

    The BC856BDW1T3 transistor is housed in the SOT-363 (SC-88) surface-mount package.

  2. What is the collector-emitter breakdown voltage of the BC856BDW1T3?

    The collector-emitter breakdown voltage (V(BR)CEO) is -65 V.

  3. What is the DC current gain range of the BC856BDW1T3?

    The DC current gain (hFE) ranges from 220 to 475.

  4. What is the collector-emitter saturation voltage of the BC856BDW1T3?

    The collector-emitter saturation voltage (VCE(sat)) is up to 0.3 V.

  5. What is the noise figure of the BC856BDW1T3?

    The noise figure is up to 10 dB.

  6. What are the typical applications of the BC856BDW1T3 transistor?

    The transistor is typically used in general-purpose amplifier applications, switching circuits, automotive electronics, and consumer electronics.

  7. What is the current-gain bandwidth product of the BC856BDW1T3?

    The current-gain bandwidth product (fT) is up to 100 MHz.

  8. What is the emitter-base breakdown voltage of the BC856BDW1T3?

    The emitter-base breakdown voltage (V(BR)EBO) is -5.0 V.

  9. What is the collector cutoff current of the BC856BDW1T3?

    The collector cutoff current (ICBO) is up to 15 nA.

  10. Is the BC856BDW1T3 suitable for high-temperature applications?

    The transistor can operate at temperatures up to 150°C, making it suitable for various high-temperature applications.

  11. Where can I find detailed ordering and shipping information for the BC856BDW1T3?

    Detailed ordering and shipping information can be found in the package dimensions section of the data sheet.

Product Attributes

Transistor Type:2 PNP (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):65V
Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:220 @ 2mA, 5V
Power - Max:380mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SC-88/SC70-6/SOT-363
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Similar Products

Part Number BC856BDW1T3 BC856BDW1T3G BC856BDW1T1
Manufacturer onsemi onsemi onsemi
Product Status Obsolete Active Obsolete
Transistor Type 2 PNP (Dual) 2 PNP (Dual) 2 PNP (Dual)
Current - Collector (Ic) (Max) 100mA 100mA 100mA
Voltage - Collector Emitter Breakdown (Max) 65V 65V 65V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max) - 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2mA, 5V 220 @ 2mA, 5V 220 @ 2mA, 5V
Power - Max 380mW 380mW 380mW
Frequency - Transition 100MHz 100MHz 100MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363

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