Overview
The BC856BDW1T3 is a dual general-purpose PNP transistor produced by onsemi. It is designed for a wide range of applications requiring low power and high reliability. The transistor is housed in the SOT-363 (SC-88) package, which is a surface-mount type, making it suitable for modern electronic designs where space is a constraint.
This transistor series is known for its robust electrical characteristics, including high DC current gain and low collector-emitter saturation voltage, making it ideal for amplifier and switching applications.
Key Specifications
Characteristic | Symbol | Min | Typ | Max | Unit |
---|---|---|---|---|---|
Collector-Base Breakdown Voltage | V(BR)CBO | -80 | - | - | V |
Collector-Emitter Breakdown Voltage | V(BR)CEO | -65 | - | - | V |
Emitter-Base Breakdown Voltage | V(BR)EBO | -5.0 | - | - | V |
Collector Cutoff Current | ICBO | - | - | 15 nA | A |
DC Current Gain | hFE | 220 | - | 475 | - |
Collector-Emitter Saturation Voltage | VCE(sat) | - | - | 0.3 V | V |
Base-Emitter Saturation Voltage | VBE(sat) | - | - | 0.7 V | V |
Current-Gain Bandwidth Product | fT | - | - | 100 MHz | - |
Key Features
- High DC Current Gain: The BC856BDW1T3 offers a high DC current gain (hFE) ranging from 220 to 475, making it suitable for amplifier applications.
- Low Collector-Emitter Saturation Voltage: The transistor has a low VCE(sat) of up to 0.3 V, which is beneficial for reducing power consumption in switching applications.
- Compact Package: The SOT-363 (SC-88) package is designed for low power surface mount applications, making it ideal for space-constrained designs.
- Robust Breakdown Voltages: High collector-base, collector-emitter, and emitter-base breakdown voltages ensure the transistor can handle a variety of operating conditions.
- Low Noise Figure: The transistor has a noise figure of up to 10 dB, which is important for applications requiring low noise levels.
Applications
- General Purpose Amplifiers: The BC856BDW1T3 is designed for general-purpose amplifier applications, including audio amplifiers and signal processing circuits.
- Switching Circuits: Its low collector-emitter saturation voltage and high current gain make it suitable for switching applications such as power supplies and motor control circuits.
- Automotive Electronics: The robust electrical characteristics of the transistor make it a good choice for automotive electronics where reliability and durability are crucial.
- Consumer Electronics: It can be used in various consumer electronic devices such as TVs, radios, and other audio equipment.
Q & A
- What is the package type of the BC856BDW1T3 transistor?
The BC856BDW1T3 transistor is housed in the SOT-363 (SC-88) surface-mount package.
- What is the collector-emitter breakdown voltage of the BC856BDW1T3?
The collector-emitter breakdown voltage (V(BR)CEO) is -65 V.
- What is the DC current gain range of the BC856BDW1T3?
The DC current gain (hFE) ranges from 220 to 475.
- What is the collector-emitter saturation voltage of the BC856BDW1T3?
The collector-emitter saturation voltage (VCE(sat)) is up to 0.3 V.
- What is the noise figure of the BC856BDW1T3?
The noise figure is up to 10 dB.
- What are the typical applications of the BC856BDW1T3 transistor?
The transistor is typically used in general-purpose amplifier applications, switching circuits, automotive electronics, and consumer electronics.
- What is the current-gain bandwidth product of the BC856BDW1T3?
The current-gain bandwidth product (fT) is up to 100 MHz.
- What is the emitter-base breakdown voltage of the BC856BDW1T3?
The emitter-base breakdown voltage (V(BR)EBO) is -5.0 V.
- What is the collector cutoff current of the BC856BDW1T3?
The collector cutoff current (ICBO) is up to 15 nA.
- Is the BC856BDW1T3 suitable for high-temperature applications?
The transistor can operate at temperatures up to 150°C, making it suitable for various high-temperature applications.
- Where can I find detailed ordering and shipping information for the BC856BDW1T3?
Detailed ordering and shipping information can be found in the package dimensions section of the data sheet.