Overview
The MAT01GH/883C is a bipolar (BJT) transistor array produced by Analog Devices Inc. This component is a monolithic dual NPN transistor, known for its high performance and stability. It features an exclusive silicon nitride triple passivation process, which ensures excellent stability of critical parameters over both temperature and time. The MAT01GH/883C is packaged in a TO-78-6 metal can and is designed for through-hole mounting. This transistor array is particularly suited for applications requiring low noise, high gain, and matched transistor pairs.
Key Specifications
| Parameter | Value |
|---|---|
| Manufacturer | Analog Devices Inc. |
| Part Number | MAT01GH/883C |
| Transistor Type | 2 NPN (Dual) Matched Pair |
| Current - Collector (Ic) (Max) | 25mA |
| Voltage - Collector Emitter Breakdown (Max) | 45V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 100μA, 1mA |
| Current - Collector Cutoff (Max) | 400pA |
| Power - Max | 500mW |
| Frequency - Transition | 450MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-78-6 Metal Can |
| RoHS Status | RoHS non-compliant |
Key Features
- Low Offset Voltage (VOS): 40 µV typical, 100 µV maximum, ensuring high matching characteristics.
- Low Temperature Coefficient of Offset Voltage (TCVOS): 0.5 µV/°C maximum, providing stability over temperature.
- High DC Current Gain (hFE): 500 minimum, with excellent hFE linearity from 10 nA to 10 mA.
- Low Noise Voltage: 0.23 µV p-p from 0.1 Hz to 10 Hz, suitable for low noise applications.
- High Breakdown Voltage: 45 V minimum, ensuring robust operation.
- Silicon Nitride Triple Passivation Process: Enhances stability of critical parameters over both temperature and time.
Applications
- Weigh Scales: Due to its high precision and low noise characteristics.
- Low Noise Op-Amp Front Ends: Ideal for applications requiring low level input stages.
- Current Mirrors and Current Sinks/Sources: Utilizes the matched transistor pairs for precise current control.
- Low Noise Instrumentation Amplifiers: Benefits from the low noise and high gain of the MAT01GH/883C).
- Voltage Controlled Attenuators and Log Amplifiers: Leverages the transistor's high gain and stability).
Q & A
- What is the MAT01GH/883C transistor array used for?
The MAT01GH/883C is used in applications requiring low noise, high gain, and matched transistor pairs, such as weigh scales, low noise op-amp front ends, current mirrors, and low noise instrumentation amplifiers).
- What is the maximum collector current of the MAT01GH/883C?
The maximum collector current (Ic) is 25mA.
- What is the breakdown voltage of the MAT01GH/883C?
The breakdown voltage (Vce) is 45V maximum.
- What is the operating temperature range of the MAT01GH/883C?
The operating temperature range is -55°C to 150°C (TJ).
- Is the MAT01GH/883C RoHS compliant?
No, the MAT01GH/883C is RoHS non-compliant.
- What is the package type of the MAT01GH/883C?
The package type is TO-78-6 metal can.
- What is the transition frequency of the MAT01GH/883C?
The transition frequency is 450MHz.
- What are the key features of the silicon nitride triple passivation process in the MAT01GH/883C?
The silicon nitride triple passivation process enhances the stability of critical parameters over both temperature and time).
- What are some typical applications of the MAT01GH/883C?
Typical applications include weigh scales, low noise op-amp front ends, current mirrors, and low noise instrumentation amplifiers).
- What is the maximum power dissipation of the MAT01GH/883C?
The maximum power dissipation is 500mW.
