Overview
The BCX51E6327HTSA1 is a bipolar junction transistor (BJT) manufactured by Infineon Technologies. This transistor is part of the BCX51 series, known for its reliability and performance in various electronic applications. The BCX51E6327HTSA1 is a PNP transistor, designed for surface mount technology (SMT) and packaged in the SOT-89 (TO-243AA) case. Although this part is currently listed as obsolete, it remains relevant for legacy systems and maintenance purposes.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Transistor Type | PNP | |
| Collector Current (Ic) - Max | 1 | A |
| Collector-Base Breakdown Voltage (V(BR)CBO) | 45 | V |
| Collector-Emitter Breakdown Voltage (V(BR)CEO) | 45 | V |
| Emitter-Base Breakdown Voltage (V(BR)EBO) | 5 | V |
| DC Current Gain (hFE) @ Ic, Vce | 40 @ 150mA, 2V | |
| Transition Frequency (fT) | 125 | MHz |
| Collector-Emitter Saturation Voltage (Vce Sat) | 500mV @ 50mA, 500mA | |
| Mounting Type | Surface Mount | |
| Operating Temperature (TJ) | 150°C | |
| Package / Case | SOT-89 (TO-243AA) | |
| Total Power Dissipation (Ptot) | 2 W |
Key Features
- High Collector Current: The BCX51E6327HTSA1 can handle a maximum collector current of 1 A, making it suitable for applications requiring moderate to high current handling.
- High Voltage Capability: With a collector-emitter breakdown voltage of 45 V, this transistor is robust against voltage spikes and can operate in a variety of voltage environments.
- Surface Mount Technology: The SOT-89 package allows for easy integration into surface mount PCB designs, enhancing manufacturing efficiency and reducing board space.
- High Transition Frequency: A transition frequency of 125 MHz indicates good high-frequency performance, making this transistor suitable for applications requiring fast switching times.
- Low Saturation Voltage: The collector-emitter saturation voltage of 500 mV at specified conditions ensures low power loss during saturation, which is beneficial for energy-efficient designs.
Applications
- General Purpose Amplification: The BCX51E6327HTSA1 can be used in various general-purpose amplification circuits due to its balanced current gain and voltage handling capabilities.
- Switching Circuits: Its high transition frequency and low saturation voltage make it suitable for switching applications where fast and efficient switching is required.
- Automotive Electronics: The transistor's robustness against high temperatures and voltage spikes makes it a candidate for use in automotive electronic systems.
- Industrial Control Systems: It can be used in industrial control systems where reliability and performance under varying conditions are crucial.
Q & A
- What is the maximum collector current of the BCX51E6327HTSA1?
The maximum collector current is 1 A.
- What is the collector-emitter breakdown voltage of this transistor?
The collector-emitter breakdown voltage is 45 V.
- What is the transition frequency of the BCX51E6327HTSA1?
The transition frequency is 125 MHz.
- What is the package type of the BCX51E6327HTSA1?
The package type is SOT-89 (TO-243AA).
- What is the maximum operating temperature for this transistor?
The maximum operating temperature (TJ) is 150°C.
- What is the total power dissipation of the BCX51E6327HTSA1?
The total power dissipation is 2 W.
- Is the BCX51E6327HTSA1 suitable for high-frequency applications?
Yes, due to its high transition frequency of 125 MHz.
- Can the BCX51E6327HTSA1 be used in automotive electronics?
Yes, it is suitable due to its robustness against high temperatures and voltage spikes.
- What is the status of the BCX51E6327HTSA1?
The BCX51E6327HTSA1 is currently listed as obsolete.
- What is the collector-emitter saturation voltage of this transistor?
The collector-emitter saturation voltage is 500 mV at specified conditions.
