BCX51H6327XTSA1
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Infineon Technologies BCX51H6327XTSA1

Manufacturer No:
BCX51H6327XTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
TRANS PNP 45V 1A SOT89
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCX51H6327XTSA1 is a bipolar junction transistor (BJT) manufactured by Infineon Technologies. This transistor is part of the BCX51 series, known for its general-purpose applications. It is packaged in a TO-243AA (also known as SOT-89) package, which is suitable for surface mount technology (SMT) assembly. The BCX51H6327XTSA1 is designed to meet the stringent requirements of automotive and industrial applications, being qualified according to AEC-Q101 standards.

Key Specifications

Parameter Value Unit
Collector-Base Voltage (VCBO) 45 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 1 A
Peak Collector Current (ICM) 1.5 A (tp ≤ 10 ms)
Base Current (IB) 100 mA
Peak Base Current (IBM) 200 mA
Total Power Dissipation (Ptot) 2 W (TS ≤ 120 °C)
Junction Temperature (Tj) -65 to 150 °C
Storage Temperature (Tstg) -65 to 150 °C
Thermal Resistance (RthJS) ≤ 15 K/W

Key Features

  • AEC-Q101 Qualified: Meets the automotive industry's stringent quality and reliability standards.
  • High Collector Current: Supports up to 1 A of collector current and 1.5 A peak collector current.
  • Low Saturation Voltage: Features a low collector-emitter saturation voltage, which is beneficial for reducing power losses.
  • Wide Temperature Range: Operates over a wide junction temperature range from -65 °C to 150 °C.
  • RoHS Compliant: Lead-free and RoHS compliant, making it suitable for environmentally friendly designs.

Applications

  • Automotive Systems: Suitable for various automotive applications due to its AEC-Q101 qualification.
  • Industrial Control Systems: Used in industrial control circuits where reliability and high current handling are required.
  • Power Amplifiers: Can be used in power amplifier circuits due to its high current gain and low saturation voltage.
  • General Purpose Switching: Applicable in general-purpose switching and driver applications.

Q & A

  1. What is the package type of the BCX51H6327XTSA1?

    The BCX51H6327XTSA1 is packaged in a TO-243AA (SOT-89) package.

  2. What is the maximum collector current of the BCX51H6327XTSA1?

    The maximum collector current is 1 A, with a peak collector current of 1.5 A for tp ≤ 10 ms.

  3. Is the BCX51H6327XTSA1 RoHS compliant?
  4. What is the operating temperature range of the BCX51H6327XTSA1?

    The junction temperature range is from -65 °C to 150 °C.

  5. What is the total power dissipation of the BCX51H6327XTSA1?

    The total power dissipation is 2 W at TS ≤ 120 °C.

  6. Is the BCX51H6327XTSA1 qualified for automotive applications?
  7. What is the thermal resistance of the BCX51H6327XTSA1?

    The thermal resistance from junction to soldering point (RthJS) is ≤ 15 K/W.

  8. What are the typical applications of the BCX51H6327XTSA1?

    It is used in automotive systems, industrial control systems, power amplifiers, and general-purpose switching applications.

  9. Can the BCX51H6327XTSA1 be used in life-support devices?

    No, it should not be used in life-support devices or systems without the express written approval of Infineon Technologies.

  10. How does the BCX51H6327XTSA1 handle high temperatures?

    The transistor can operate over a wide temperature range and has a high junction temperature rating of up to 150 °C.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 150mA, 2V
Power - Max:2 W
Frequency - Transition:125MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-243AA
Supplier Device Package:PG-SOT89
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Similar Products

Part Number BCX51H6327XTSA1 BCX52H6327XTSA1 BCX53H6327XTSA1 BCX55H6327XTSA1
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Not For New Designs Not For New Designs Not For New Designs Not For New Designs
Transistor Type PNP PNP PNP NPN
Current - Collector (Ic) (Max) 1 A 1 A 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 45 V 60 V 80 V 60 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA, 2V 40 @ 150mA, 2V 40 @ 150mA, 2V 40 @ 150mA, 2V
Power - Max 2 W 2 W 2 W 2 W
Frequency - Transition 125MHz 125MHz 125MHz 100MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-243AA TO-243AA TO-243AA TO-243AA
Supplier Device Package PG-SOT89 PG-SOT89 PG-SOT89 PG-SOT89

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