Overview
The BSS316N is a small-signal N-channel enhancement mode MOSFET from Infineon Technologies. It is part of the OptiMOS™2 series, known for its high performance and reliability. This MOSFET is designed for various applications requiring low on-state resistance and fast switching times.
Key Specifications
| Parameter | Symbol | Conditions | Unit | Min. | ||
|---|---|---|---|---|---|---|
| Continuous Drain Current | ID | TA=25°C | A | - | - | 1.4 |
| Pulsed Drain Current | ID,pulse | TA=25°C | A | - | - | 5.6 |
| Avalanche Energy, Single Pulse | EAS | ID=1.4 A, RGS=25 Ω | mJ | - | - | 3.7 |
| Gate Source Voltage | VGS | - | V | -20 | - | 20 |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0 V, ID=250 µA | V | 30 | - | - |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=3.7 µA | V | 1.2 | 1.6 | 2.0 |
| Drain-Source On-State Resistance | RDS(on) | VGS=4.5 V, ID=1.1 A | mΩ | - | 191 | 280 |
| Drain-Source On-State Resistance | RDS(on) | VGS=10 V, ID=1.4 A | mΩ | - | 119 | 160 |
Key Features
- N-channel enhancement mode MOSFET
- Logic level (4.5V rated)
- Avalanche rated
- Qualified according to AEC Q101
- 100% lead-free; RoHS compliant; Halogen-free according to IEC61249-2-21
- Low on-state resistance (RDS(on)) for higher efficiency
- Fast switching times
- High reliability and manufacturing capacity
Applications
- LED Lighting
- Advanced Driver Assistance Systems (ADAS)
- Body Control Units
- Switch-Mode Power Supplies (SMPS)
- Motor Control
- General-purpose switching applications
Q & A
- What is the maximum continuous drain current of the BSS316N?
The maximum continuous drain current is 1.4 A at TA=25°C.
- What is the maximum pulsed drain current of the BSS316N?
The maximum pulsed drain current is 5.6 A at TA=25°C.
- What is the avalanche energy rating of the BSS316N?
The avalanche energy rating is 3.7 mJ for a single pulse with ID=1.4 A and RGS=25 Ω.
- What is the gate source voltage range for the BSS316N?
The gate source voltage range is ±20 V.
- What is the drain-source breakdown voltage of the BSS316N?
The drain-source breakdown voltage is 30 V with VGS=0 V and ID=250 µA.
- What is the gate threshold voltage of the BSS316N?
The gate threshold voltage is between 1.2 V and 2.0 V with VDS=VGS and ID=3.7 µA.
- What are the typical values for the drain-source on-state resistance?
The typical values are 191 mΩ with VGS=4.5 V and ID=1.1 A, and 119 mΩ with VGS=10 V and ID=1.4 A.
- Is the BSS316N RoHS compliant and halogen-free?
Yes, the BSS316N is 100% lead-free, RoHS compliant, and halogen-free according to IEC61249-2-21.
- What are some common applications for the BSS316N?
Common applications include LED lighting, ADAS, body control units, SMPS, and motor control.
- What is the operating temperature range for the BSS316N?
The operating temperature range is -55°C to 150°C.
