MMBTA06LT1HTSA1
  • Share:

Infineon Technologies MMBTA06LT1HTSA1

Manufacturer No:
MMBTA06LT1HTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
TRANS NPN 80V 0.5A SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMBTA06LT1HTSA1 is a General Purpose NPN Bipolar Junction Transistor (BJT) manufactured by Infineon Technologies. This transistor is designed for low power amplification and switching applications. It is part of the MMBTA06 series and is known for its reliability and performance in various electronic circuits. The device is packaged in a SOT-23 (PG-SOT23) package, making it suitable for surface mount technology (SMT) assembly. It is also compliant with automotive standards, specifically AEC-Q101 qualified, and is RoHS compliant, ensuring environmental sustainability.

Key Specifications

Parameter Symbol Value Unit
Collector-Emitter Voltage VCEO 80 Vdc
Collector-Base Voltage VCBO 80 Vdc
Emitter-Base Voltage VEBO 4.0 Vdc
Collector Current - Continuous IC 500 mAdc
Peak Collector Current ICM 1 A (t < 10 ms)
Total Power Dissipation Ptot 330 mW
Junction Temperature Tj -65 to 150 °C
Storage Temperature Tstg -65 to 150 °C
Transition Frequency fT 100 MHz
Collector-Emitter Saturation Voltage VCE(sat) 0.25 V @ IC = 100 mA, IB = 10 mA
DC Current Gain (hFE) hFE 100 @ IC = 100 mA, VCE = 1 V

Key Features

  • Low Power Amplification and Switching: Ideal for low power amplification and switching applications due to its low collector-emitter saturation voltage and high DC current gain.
  • AEC-Q101 Qualified: Meets automotive standards, ensuring reliability and performance in automotive applications.
  • RoHS Compliant: Pb-free and halogen-free, making it environmentally friendly.
  • High Transition Frequency: A transition frequency of 100 MHz, suitable for high-frequency applications.
  • Surface Mount Package: Packaged in SOT-23, facilitating surface mount technology (SMT) assembly.
  • Wide Operating Temperature Range: Operates from -65°C to 150°C, making it versatile for various environments.

Applications

  • Automotive Systems: Suitable for use in automotive systems due to its AEC-Q101 qualification.
  • Low Power Amplifiers: Ideal for low power amplification in audio and signal processing circuits.
  • Switching Circuits: Used in switching applications such as power supplies, control circuits, and digital logic circuits.
  • General Electronics: Can be used in a variety of general electronic circuits requiring low power BJTs.

Q & A

  1. What is the collector-emitter voltage rating of the MMBTA06LT1HTSA1?

    The collector-emitter voltage rating is 80 Vdc.

  2. What is the maximum collector current of the MMBTA06LT1HTSA1?

    The maximum collector current is 500 mA.

  3. What is the total power dissipation of the MMBTA06LT1HTSA1?

    The total power dissipation is 330 mW.

  4. What is the operating temperature range of the MMBTA06LT1HTSA1?

    The operating temperature range is from -65°C to 150°C.

  5. Is the MMBTA06LT1HTSA1 RoHS compliant?

    Yes, the MMBTA06LT1HTSA1 is RoHS compliant and Pb-free.

  6. What is the transition frequency of the MMBTA06LT1HTSA1?

    The transition frequency is 100 MHz.

  7. What is the collector-emitter saturation voltage of the MMBTA06LT1HTSA1?

    The collector-emitter saturation voltage is 0.25 V at IC = 100 mA and IB = 10 mA.

  8. What is the DC current gain (hFE) of the MMBTA06LT1HTSA1?

    The DC current gain (hFE) is 100 at IC = 100 mA and VCE = 1 V.

  9. What package type is the MMBTA06LT1HTSA1 available in?

    The MMBTA06LT1HTSA1 is available in a SOT-23 (PG-SOT23) package.

  10. Is the MMBTA06LT1HTSA1 suitable for automotive applications?

    Yes, the MMBTA06LT1HTSA1 is AEC-Q101 qualified, making it suitable for automotive applications.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:250mV @ 10mA, 100mA
Current - Collector Cutoff (Max):100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 100mA, 1V
Power - Max:330 mW
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:PG-SOT23
0 Remaining View Similar

In Stock

$0.06
7,258

Please send RFQ , we will respond immediately.

Same Series
SMBTA06E6433HTMA1
SMBTA06E6433HTMA1
TRANS NPN 80V 0.5A SOT23
SMBTA06E6327HTSA1
SMBTA06E6327HTSA1
TRANS NPN 80V 0.5A SOT23

Similar Products

Part Number MMBTA06LT1HTSA1 MMBTA56LT1HTSA1
Manufacturer Infineon Technologies Infineon Technologies
Product Status Not For New Designs Not For New Designs
Transistor Type NPN PNP
Current - Collector (Ic) (Max) 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max) 100nA 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA, 1V 100 @ 100mA, 1V
Power - Max 330 mW 330 mW
Frequency - Transition 100MHz 100MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package PG-SOT23 PG-SOT23

Related Product By Categories

BC857C_R1_00001
BC857C_R1_00001
Panjit International Inc.
TRANS PNP 45V 0.1A SOT23
BC807-40W-AU_R1_000A1
BC807-40W-AU_R1_000A1
Panjit International Inc.
TRANS PNP 45V 0.5A SOT323
MMBT3904LT1G
MMBT3904LT1G
onsemi
TRANS NPN 40V 0.2A SOT23-3
BC846BLT3G
BC846BLT3G
onsemi
TRANS NPN 65V 0.1A SOT23-3
BCP56H115
BCP56H115
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
BC856AQBZ
BC856AQBZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
BCX56-16115
BCX56-16115
NXP USA Inc.
NOW NEXPERIA SMALL SIGNAL BIPOLA
BC857BLT1
BC857BLT1
onsemi
TRANS PNP 45V 100MA SOT23
TIP122FP
TIP122FP
STMicroelectronics
TRANS NPN DARL 100V 5A TO220FP
BC 846A E6327
BC 846A E6327
Infineon Technologies
TRANS NPN 65V 0.1A SOT-23
SS8050-C-AP
SS8050-C-AP
Micro Commercial Co
TRANS NPN 25V 1.5A TO92
BC857BW/SNX
BC857BW/SNX
Nexperia USA Inc.
TRANS PNP 45V 0.1A SC70

Related Product By Brand

BAV 70S H6327
BAV 70S H6327
Infineon Technologies
HIGH SPEED SWITCHING DIODE
BAS70-04E6327
BAS70-04E6327
Infineon Technologies
BAS70 - HIGH SPEED SWITCHING, CL
BC847PNE6327BTSA1
BC847PNE6327BTSA1
Infineon Technologies
TRANS NPN/PNP 45V 0.1A SOT363-6
BC846AE6433
BC846AE6433
Infineon Technologies
TRANS NPN 45V 0.1A SOT23
BC807-40E6433
BC807-40E6433
Infineon Technologies
TRANS PNP 45V 0.5A SOT23-3
BC857CWE6433HTMA1
BC857CWE6433HTMA1
Infineon Technologies
TRANS PNP 45V 0.1A SOT323
BCP5416E6433HTMA1
BCP5416E6433HTMA1
Infineon Technologies
TRANS NPN 45V 1A SOT223-4
BSC016N06NSATMA1
BSC016N06NSATMA1
Infineon Technologies
MOSFET N-CH 60V 30A/100A TDSON
BSC010N04LSCATMA1
BSC010N04LSCATMA1
Infineon Technologies
DIFFERENTIATED MOSFETS
BSS84P E6433
BSS84P E6433
Infineon Technologies
MOSFET P-CH 60V 170MA SOT23-3
BSS138W E6327
BSS138W E6327
Infineon Technologies
MOSFET N-CH 60V 280MA SOT323-3
IKW75N60TA
IKW75N60TA
Infineon Technologies
IKW75N60 - AUTOMOTIVE IGBT DISCR