MMBTA06LT1HTSA1
  • Share:

Infineon Technologies MMBTA06LT1HTSA1

Manufacturer No:
MMBTA06LT1HTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
TRANS NPN 80V 0.5A SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMBTA06LT1HTSA1 is a General Purpose NPN Bipolar Junction Transistor (BJT) manufactured by Infineon Technologies. This transistor is designed for low power amplification and switching applications. It is part of the MMBTA06 series and is known for its reliability and performance in various electronic circuits. The device is packaged in a SOT-23 (PG-SOT23) package, making it suitable for surface mount technology (SMT) assembly. It is also compliant with automotive standards, specifically AEC-Q101 qualified, and is RoHS compliant, ensuring environmental sustainability.

Key Specifications

Parameter Symbol Value Unit
Collector-Emitter Voltage VCEO 80 Vdc
Collector-Base Voltage VCBO 80 Vdc
Emitter-Base Voltage VEBO 4.0 Vdc
Collector Current - Continuous IC 500 mAdc
Peak Collector Current ICM 1 A (t < 10 ms)
Total Power Dissipation Ptot 330 mW
Junction Temperature Tj -65 to 150 °C
Storage Temperature Tstg -65 to 150 °C
Transition Frequency fT 100 MHz
Collector-Emitter Saturation Voltage VCE(sat) 0.25 V @ IC = 100 mA, IB = 10 mA
DC Current Gain (hFE) hFE 100 @ IC = 100 mA, VCE = 1 V

Key Features

  • Low Power Amplification and Switching: Ideal for low power amplification and switching applications due to its low collector-emitter saturation voltage and high DC current gain.
  • AEC-Q101 Qualified: Meets automotive standards, ensuring reliability and performance in automotive applications.
  • RoHS Compliant: Pb-free and halogen-free, making it environmentally friendly.
  • High Transition Frequency: A transition frequency of 100 MHz, suitable for high-frequency applications.
  • Surface Mount Package: Packaged in SOT-23, facilitating surface mount technology (SMT) assembly.
  • Wide Operating Temperature Range: Operates from -65°C to 150°C, making it versatile for various environments.

Applications

  • Automotive Systems: Suitable for use in automotive systems due to its AEC-Q101 qualification.
  • Low Power Amplifiers: Ideal for low power amplification in audio and signal processing circuits.
  • Switching Circuits: Used in switching applications such as power supplies, control circuits, and digital logic circuits.
  • General Electronics: Can be used in a variety of general electronic circuits requiring low power BJTs.

Q & A

  1. What is the collector-emitter voltage rating of the MMBTA06LT1HTSA1?

    The collector-emitter voltage rating is 80 Vdc.

  2. What is the maximum collector current of the MMBTA06LT1HTSA1?

    The maximum collector current is 500 mA.

  3. What is the total power dissipation of the MMBTA06LT1HTSA1?

    The total power dissipation is 330 mW.

  4. What is the operating temperature range of the MMBTA06LT1HTSA1?

    The operating temperature range is from -65°C to 150°C.

  5. Is the MMBTA06LT1HTSA1 RoHS compliant?

    Yes, the MMBTA06LT1HTSA1 is RoHS compliant and Pb-free.

  6. What is the transition frequency of the MMBTA06LT1HTSA1?

    The transition frequency is 100 MHz.

  7. What is the collector-emitter saturation voltage of the MMBTA06LT1HTSA1?

    The collector-emitter saturation voltage is 0.25 V at IC = 100 mA and IB = 10 mA.

  8. What is the DC current gain (hFE) of the MMBTA06LT1HTSA1?

    The DC current gain (hFE) is 100 at IC = 100 mA and VCE = 1 V.

  9. What package type is the MMBTA06LT1HTSA1 available in?

    The MMBTA06LT1HTSA1 is available in a SOT-23 (PG-SOT23) package.

  10. Is the MMBTA06LT1HTSA1 suitable for automotive applications?

    Yes, the MMBTA06LT1HTSA1 is AEC-Q101 qualified, making it suitable for automotive applications.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:250mV @ 10mA, 100mA
Current - Collector Cutoff (Max):100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 100mA, 1V
Power - Max:330 mW
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:PG-SOT23
0 Remaining View Similar

In Stock

$0.06
7,258

Please send RFQ , we will respond immediately.

Same Series
SMBTA06E6433HTMA1
SMBTA06E6433HTMA1
TRANS NPN 80V 0.5A SOT23
SMBTA06E6327HTSA1
SMBTA06E6327HTSA1
TRANS NPN 80V 0.5A SOT23

Similar Products

Part Number MMBTA06LT1HTSA1 MMBTA56LT1HTSA1
Manufacturer Infineon Technologies Infineon Technologies
Product Status Not For New Designs Not For New Designs
Transistor Type NPN PNP
Current - Collector (Ic) (Max) 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max) 100nA 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA, 1V 100 @ 100mA, 1V
Power - Max 330 mW 330 mW
Frequency - Transition 100MHz 100MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package PG-SOT23 PG-SOT23

Related Product By Categories

BC857BWE6327
BC857BWE6327
Infineon Technologies
BIPOLAR GEN PURPOSE TRANSISTOR
BCP69-16/S500115
BCP69-16/S500115
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
BC857C/DG/B4235
BC857C/DG/B4235
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
2SC5658M3T5G
2SC5658M3T5G
onsemi
TRANS NPN 50V 0.1A SOT723
BC857B-AU_R1_000A1
BC857B-AU_R1_000A1
Panjit International Inc.
TRANS PNP 45V 0.1A SOT23
NSS20101JT1G
NSS20101JT1G
onsemi
TRANS NPN 20V 1A SC89-3
BDX34C
BDX34C
STMicroelectronics
TRANS PNP DARL 100V 10A TO220
BD680
BD680
STMicroelectronics
TRANS PNP DARL 80V 4A SOT32-3
MCH6203-TL-E
MCH6203-TL-E
onsemi
TRANS NPN 50V 1A 6MCPH
NSS60200LT1G
NSS60200LT1G
onsemi
TRANS PNP 60V 2A SOT23-3
BC 846A E6327
BC 846A E6327
Infineon Technologies
TRANS NPN 65V 0.1A SOT-23
BUK9Y11-30B/C1,115
BUK9Y11-30B/C1,115
NXP USA Inc.
MOSFET N-CH LFPAK

Related Product By Brand

BAW56WE6327
BAW56WE6327
Infineon Technologies
HIGH SPEED SWITCHING DIODE
BAS4007WE6327BTSA1
BAS4007WE6327BTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 40V SOT343
BAS 70-05 B5003
BAS 70-05 B5003
Infineon Technologies
DIODE ARRAY SCHOTTKY 70V SOT23
BC858BWE6327
BC858BWE6327
Infineon Technologies
TRANS PNP 30V 0.1A SOT323-3
BC857B E6327
BC857B E6327
Infineon Technologies
TRANS PNP 45V 0.1A SOT23
BCX56H6327XTSA1
BCX56H6327XTSA1
Infineon Technologies
TRANS NPN 80V 1A SOT89
BC 817-25W E6327
BC 817-25W E6327
Infineon Technologies
TRANS NPN 45V 0.5A SOT323
BCP 54-16 H6778
BCP 54-16 H6778
Infineon Technologies
TRANS NPN 45V 1A SOT223-4
IRLML2402TRPBF
IRLML2402TRPBF
Infineon Technologies
MOSFET N-CH 20V 1.2A SOT23
IPB017N10N5ATMA1
IPB017N10N5ATMA1
Infineon Technologies
MOSFET N-CH 100V 180A TO263-7
BTT60302ERAXUMA1
BTT60302ERAXUMA1
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 TDSO-14
BTS711L1XUMA1
BTS711L1XUMA1
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 DSO-20