BCP 69US E6327
  • Share:

Infineon Technologies BCP 69US E6327

Manufacturer No:
BCP 69US E6327
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
TRANS PNP 20V 1A TSOP6-6
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCP 69US E6327 is a high-performance PNP bipolar transistor manufactured by Infineon Technologies. This transistor is designed to utilize the movement of charge carriers (electrons and holes) within semiconductor materials, making it suitable for various high-demand application scenarios. The BCP 69US E6327 operates through the formation of a PN junction at the boundary between two different concentrations of charge carrier regions, ensuring efficient and reliable operation.

Key Specifications

Specification Value
Transistor Polarity PNP
Configuration Single
Maximum DC Collector Current (Ic) 1 A
Collector-Emitter Voltage (VCEO) Max 20 V
DC Current Gain (hFE) Min @ Ic and Vce 85 @ 500mA, 1V
Frequency Transition 100 MHz
Maximum Power 1.5 W
Vce Saturation (Max) @ Ib, Ic 500 mV @ 100 mA, 1 A
Package Type SOT-23-6 (TSOT-23-6)
Packaging Tape & Reel (TR)
RoHS Status Lead Free / RoHS Compliant

Key Features

  • High Current Handling: The BCP 69US E6327 can handle a maximum collector current of 1 A, making it suitable for large current loads.
  • High Current Amplification: With a DC Current Gain (hFE) of 85 @ 500mA, 1V, this transistor offers high current amplification ability, enhancing the sensitivity and stability of circuits.
  • High-Frequency Capability: The transistor has a frequency transition of up to 100 MHz, making it ideal for high-frequency applications.
  • Efficient Power Handling: It has a maximum power of 1.5 W and a maximum collector-emitter breakdown voltage of 20 V, ensuring it can handle large-scale electrical energy conversion and control tasks.
  • Low Vce Saturation: The Vce Saturation (Max) @ Ib, Ic is 500 mV @ 100 mA, 1 A, which helps in reducing energy consumption and improving energy utilization efficiency.
  • Compact Packaging: The SOT-23-6 (TSOT-23-6) package is convenient for integration onto circuit boards and supports mass production with Tape & Reel packaging.

Applications

  • Analog Switch: The BCP 69US E6327 can be used to control the on and off of analog signals, such as in audio applications where it can amplify and cut off sound signals.
  • Drive Circuit: It can drive various load devices, including electric motors and displays.
  • Microwave Amplifier: Its high-frequency response characteristics make it suitable for microwave amplifier circuits, including common emitter, common base, and common collector amplifiers.
  • Constant Current Source: The transistor can be used as a constant current source in various DC power supply circuits, providing stable output current by adjusting circuit parameters.

Q & A

  1. What is the maximum collector current of the BCP 69US E6327 transistor?

    The maximum collector current of the BCP 69US E6327 transistor is 1 A.

  2. What is the collector-emitter voltage (VCEO) maximum of the BCP 69US E6327?

    The collector-emitter voltage (VCEO) maximum of the BCP 69US E6327 is 20 V.

  3. What is the DC Current Gain (hFE) of the BCP 69US E6327 transistor?

    The DC Current Gain (hFE) of the BCP 69US E6327 transistor is 85 @ 500mA, 1V.

  4. What is the frequency transition capability of the BCP 69US E6327 transistor?

    The frequency transition capability of the BCP 69US E6327 transistor is up to 100 MHz.

  5. What is the maximum power handling of the BCP 69US E6327 transistor?

    The maximum power handling of the BCP 69US E6327 transistor is 1.5 W.

  6. What type of packaging does the BCP 69US E6327 transistor use?

    The BCP 69US E6327 transistor uses SOT-23-6 (TSOT-23-6) packaging and is available in Tape & Reel (TR) format.

  7. Is the BCP 69US E6327 transistor RoHS compliant?

    Yes, the BCP 69US E6327 transistor is Lead Free and RoHS compliant.

  8. What are some common applications of the BCP 69US E6327 transistor?

    The BCP 69US E6327 transistor is commonly used in analog switches, drive circuits, microwave amplifiers, and as a constant current source.

  9. What is the Vce Saturation (Max) @ Ib, Ic of the BCP 69US E6327 transistor?

    The Vce Saturation (Max) @ Ib, Ic of the BCP 69US E6327 transistor is 500 mV @ 100 mA, 1 A.

  10. Why is the BCP 69US E6327 transistor suitable for high-frequency applications?

    The BCP 69US E6327 transistor is suitable for high-frequency applications due to its high frequency transition capability of up to 100 MHz.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):20 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 100mA, 1A
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:85 @ 500mA, 1V
Power - Max:1.5 W
Frequency - Transition:100MHz
Operating Temperature:- 
Mounting Type:Surface Mount
Package / Case:SOT-23-6 Thin, TSOT-23-6
Supplier Device Package:PG-TSOP6-6
0 Remaining View Similar

In Stock

-
427

Please send RFQ , we will respond immediately.

Same Series
DD15S2S5WV50
DD15S2S5WV50
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20L0S
DD15S20L0S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S2S5WV50/AA
DD15S2S5WV50/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200V5S
DD15S200V5S
CONN D-SUB HD RCPT 15P SLDR CUP
DD26M20HE20/AA
DD26M20HE20/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD26S200T0
DD26S200T0
CONN D-SUB HD RCPT 26P SLDR CUP
DD26M20HE30/AA
DD26M20HE30/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD26S10HT0/AA
DD26S10HT0/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD44S32000X/AA
DD44S32000X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S2S0V5X/AA
DD26S2S0V5X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V50
DD26S2S50V50
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S50T2X/AA
DD44S32S50T2X/AA
CONN D-SUB HD RCPT 44P VERT SLDR

Related Product By Categories

TIP29C
TIP29C
STMicroelectronics
TRANS NPN 100V 1A TO220
MJE5852G
MJE5852G
onsemi
TRANS PNP 400V 8A TO220
MJL4302AG
MJL4302AG
onsemi
TRANS PNP 350V 15A TO264
SBC846ALT1G
SBC846ALT1G
onsemi
TRANS NPN 65V 0.1A SOT23-3
BC857C_R1_00001
BC857C_R1_00001
Panjit International Inc.
TRANS PNP 45V 0.1A SOT23
STN2580
STN2580
STMicroelectronics
TRANS NPN 400V 1A SOT223
MJD50TF
MJD50TF
onsemi
TRANS NPN 400V 1A DPAK
BC817-25 RFG
BC817-25 RFG
Taiwan Semiconductor Corporation
TRANS NPN 45V 0.5A SOT23
BCX52-16TF
BCX52-16TF
Nexperia USA Inc.
TRANS PNP 60V 1A SOT89
BCX5616QTC
BCX5616QTC
Diodes Incorporated
PWR MID PERF TRANSISTOR SOT89 T&
BCV46QTA
BCV46QTA
Diodes Incorporated
GENERAL PURPOSE TRANSISTOR SOT23
BC857BT,115
BC857BT,115
NXP USA Inc.
TRANS PNP 45V 0.1A SC75

Related Product By Brand

BAV199E6359
BAV199E6359
Infineon Technologies
RECTIFIER, 2 ELEMENT, 0.2A, 80V
BC847CE6327HTSA1
BC847CE6327HTSA1
Infineon Technologies
TRANS NPN 45V 0.1A SOT23
MMBT2907ALT1HTSA1
MMBT2907ALT1HTSA1
Infineon Technologies
TRANS PNP 60V 0.6A SOT23
BCX5116H6433XTMA1
BCX5116H6433XTMA1
Infineon Technologies
TRANS PNP 45V 1A SOT89
BCP5416H6327XTSA1
BCP5416H6327XTSA1
Infineon Technologies
TRANS NPN 45V 1A SOT223-4
BC80740WE6327BTSA1
BC80740WE6327BTSA1
Infineon Technologies
TRANS PNP 45V 0.5A SOT323
IPG20N04S4L08ATMA1
IPG20N04S4L08ATMA1
Infineon Technologies
MOSFET 2N-CH 40V 20A 8TDSON
IRLML5203TRPBF
IRLML5203TRPBF
Infineon Technologies
MOSFET P-CH 30V 3A MICRO3/SOT23
IRF640NSTRLPBF
IRF640NSTRLPBF
Infineon Technologies
MOSFET N-CH 200V 18A D2PAK
BSP742RIXUMA1
BSP742RIXUMA1
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 PDSO-8
BTS4142NHUMA1
BTS4142NHUMA1
Infineon Technologies
IC PWR SWTCH N-CHAN 1:1 SOT223-4
CY7C1061DV33-10BVXIT
CY7C1061DV33-10BVXIT
Infineon Technologies
IC SRAM 16MBIT PARALLEL 48VFBGA