BCP 69US E6327
  • Share:

Infineon Technologies BCP 69US E6327

Manufacturer No:
BCP 69US E6327
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
TRANS PNP 20V 1A TSOP6-6
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCP 69US E6327 is a high-performance PNP bipolar transistor manufactured by Infineon Technologies. This transistor is designed to utilize the movement of charge carriers (electrons and holes) within semiconductor materials, making it suitable for various high-demand application scenarios. The BCP 69US E6327 operates through the formation of a PN junction at the boundary between two different concentrations of charge carrier regions, ensuring efficient and reliable operation.

Key Specifications

Specification Value
Transistor Polarity PNP
Configuration Single
Maximum DC Collector Current (Ic) 1 A
Collector-Emitter Voltage (VCEO) Max 20 V
DC Current Gain (hFE) Min @ Ic and Vce 85 @ 500mA, 1V
Frequency Transition 100 MHz
Maximum Power 1.5 W
Vce Saturation (Max) @ Ib, Ic 500 mV @ 100 mA, 1 A
Package Type SOT-23-6 (TSOT-23-6)
Packaging Tape & Reel (TR)
RoHS Status Lead Free / RoHS Compliant

Key Features

  • High Current Handling: The BCP 69US E6327 can handle a maximum collector current of 1 A, making it suitable for large current loads.
  • High Current Amplification: With a DC Current Gain (hFE) of 85 @ 500mA, 1V, this transistor offers high current amplification ability, enhancing the sensitivity and stability of circuits.
  • High-Frequency Capability: The transistor has a frequency transition of up to 100 MHz, making it ideal for high-frequency applications.
  • Efficient Power Handling: It has a maximum power of 1.5 W and a maximum collector-emitter breakdown voltage of 20 V, ensuring it can handle large-scale electrical energy conversion and control tasks.
  • Low Vce Saturation: The Vce Saturation (Max) @ Ib, Ic is 500 mV @ 100 mA, 1 A, which helps in reducing energy consumption and improving energy utilization efficiency.
  • Compact Packaging: The SOT-23-6 (TSOT-23-6) package is convenient for integration onto circuit boards and supports mass production with Tape & Reel packaging.

Applications

  • Analog Switch: The BCP 69US E6327 can be used to control the on and off of analog signals, such as in audio applications where it can amplify and cut off sound signals.
  • Drive Circuit: It can drive various load devices, including electric motors and displays.
  • Microwave Amplifier: Its high-frequency response characteristics make it suitable for microwave amplifier circuits, including common emitter, common base, and common collector amplifiers.
  • Constant Current Source: The transistor can be used as a constant current source in various DC power supply circuits, providing stable output current by adjusting circuit parameters.

Q & A

  1. What is the maximum collector current of the BCP 69US E6327 transistor?

    The maximum collector current of the BCP 69US E6327 transistor is 1 A.

  2. What is the collector-emitter voltage (VCEO) maximum of the BCP 69US E6327?

    The collector-emitter voltage (VCEO) maximum of the BCP 69US E6327 is 20 V.

  3. What is the DC Current Gain (hFE) of the BCP 69US E6327 transistor?

    The DC Current Gain (hFE) of the BCP 69US E6327 transistor is 85 @ 500mA, 1V.

  4. What is the frequency transition capability of the BCP 69US E6327 transistor?

    The frequency transition capability of the BCP 69US E6327 transistor is up to 100 MHz.

  5. What is the maximum power handling of the BCP 69US E6327 transistor?

    The maximum power handling of the BCP 69US E6327 transistor is 1.5 W.

  6. What type of packaging does the BCP 69US E6327 transistor use?

    The BCP 69US E6327 transistor uses SOT-23-6 (TSOT-23-6) packaging and is available in Tape & Reel (TR) format.

  7. Is the BCP 69US E6327 transistor RoHS compliant?

    Yes, the BCP 69US E6327 transistor is Lead Free and RoHS compliant.

  8. What are some common applications of the BCP 69US E6327 transistor?

    The BCP 69US E6327 transistor is commonly used in analog switches, drive circuits, microwave amplifiers, and as a constant current source.

  9. What is the Vce Saturation (Max) @ Ib, Ic of the BCP 69US E6327 transistor?

    The Vce Saturation (Max) @ Ib, Ic of the BCP 69US E6327 transistor is 500 mV @ 100 mA, 1 A.

  10. Why is the BCP 69US E6327 transistor suitable for high-frequency applications?

    The BCP 69US E6327 transistor is suitable for high-frequency applications due to its high frequency transition capability of up to 100 MHz.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):20 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 100mA, 1A
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:85 @ 500mA, 1V
Power - Max:1.5 W
Frequency - Transition:100MHz
Operating Temperature:- 
Mounting Type:Surface Mount
Package / Case:SOT-23-6 Thin, TSOT-23-6
Supplier Device Package:PG-TSOP6-6
0 Remaining View Similar

In Stock

-
427

Please send RFQ , we will respond immediately.

Same Series
DD15S20WES/AA
DD15S20WES/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200ES
DD15S200ES
CONN D-SUB HD RCPT 15P SLDR CUP
DD44M32S50V50
DD44M32S50V50
CONN D-SUB HD PLUG 44P VERT SLDR
DD26M20HT0/AA
DD26M20HT0/AA
CONN D-SUB HD PLUG 26P SLDR CUP
CBC9W4S10HV3S/AA
CBC9W4S10HV3S/AA
CONN D-SUB RCPT 9POS CRIMP
DD15S20WV5S
DD15S20WV5S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20WV5S/AA
DD15S20WV5S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20JV5S/AA
DD15S20JV5S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2S50T0
DD26S2S50T0
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0V5X/AA
DD26S2S0V5X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20WE20/AA
DD26S20WE20/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20J00
DD26S20J00
CONN D-SUB HD RCPT 26P SLDR CUP

Related Product By Categories

BCP54-10,135
BCP54-10,135
Nexperia USA Inc.
TRANS NPN 45V 1A SOT223
PDTA114EU/ZL115
PDTA114EU/ZL115
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
BC817-25
BC817-25
Diotec Semiconductor
TRANS NPN 45V 0.8A SOT23-3
PBHV9040T,215
PBHV9040T,215
Nexperia USA Inc.
TRANS PNP 400V 0.25A TO236AB
BC807-40W-AU_R1_000A1
BC807-40W-AU_R1_000A1
Panjit International Inc.
TRANS PNP 45V 0.5A SOT323
PMBT3904MB,315
PMBT3904MB,315
Nexperia USA Inc.
TRANS NPN 40V 0.2A DFN1006B-3
BC857CW,135
BC857CW,135
Nexperia USA Inc.
TRANS PNP 45V 0.1A SOT323
BC846BQBZ
BC846BQBZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
BC857C TR PBFREE
BC857C TR PBFREE
Central Semiconductor Corp
TRANS PNP 45V 0.1A SOT23
BCX5316H6327XTSA1
BCX5316H6327XTSA1
Infineon Technologies
TRANS PNP 80V 1A SOT89
BC847BW-AQ
BC847BW-AQ
Diotec Semiconductor
TRANS NPN 45V 0.1A SOT323
BC857BLT1
BC857BLT1
onsemi
TRANS PNP 45V 100MA SOT23

Related Product By Brand

BAS7006B5003
BAS7006B5003
Infineon Technologies
SCHOTTKY DIODE
BAS40-07WH6327
BAS40-07WH6327
Infineon Technologies
SCHOTTKY DIODE
BC847CWH6778
BC847CWH6778
Infineon Technologies
TRANS NPN 45V 0.1A SOT323-3
BC848BW
BC848BW
Infineon Technologies
TRANS NPN 30V 0.1A SOT323
MMBTA42LT1HTSA1
MMBTA42LT1HTSA1
Infineon Technologies
TRANS NPN 300V 0.5A SOT23
BC856BWE6327BTSA1
BC856BWE6327BTSA1
Infineon Technologies
TRANS PNP 65V 0.1A SOT323
BC 807-40W H6433
BC 807-40W H6433
Infineon Technologies
TRANS PNP 45V 0.5A SOT323
IRLML5203TRPBF
IRLML5203TRPBF
Infineon Technologies
MOSFET P-CH 30V 3A MICRO3/SOT23
TLE72593GEXUMA1
TLE72593GEXUMA1
Infineon Technologies
IC TRANSCEIVER 1/1 DSO-8
BTS50202EKAXUMA2
BTS50202EKAXUMA2
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 DSO-14
TLE4267GMXUMA1
TLE4267GMXUMA1
Infineon Technologies
IC REG LINEAR 5V 400MA DSO14-30
CY7C1061DV33-10BVXIT
CY7C1061DV33-10BVXIT
Infineon Technologies
IC SRAM 16MBIT PARALLEL 48VFBGA