BCP 69US E6327
  • Share:

Infineon Technologies BCP 69US E6327

Manufacturer No:
BCP 69US E6327
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
TRANS PNP 20V 1A TSOP6-6
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCP 69US E6327 is a high-performance PNP bipolar transistor manufactured by Infineon Technologies. This transistor is designed to utilize the movement of charge carriers (electrons and holes) within semiconductor materials, making it suitable for various high-demand application scenarios. The BCP 69US E6327 operates through the formation of a PN junction at the boundary between two different concentrations of charge carrier regions, ensuring efficient and reliable operation.

Key Specifications

Specification Value
Transistor Polarity PNP
Configuration Single
Maximum DC Collector Current (Ic) 1 A
Collector-Emitter Voltage (VCEO) Max 20 V
DC Current Gain (hFE) Min @ Ic and Vce 85 @ 500mA, 1V
Frequency Transition 100 MHz
Maximum Power 1.5 W
Vce Saturation (Max) @ Ib, Ic 500 mV @ 100 mA, 1 A
Package Type SOT-23-6 (TSOT-23-6)
Packaging Tape & Reel (TR)
RoHS Status Lead Free / RoHS Compliant

Key Features

  • High Current Handling: The BCP 69US E6327 can handle a maximum collector current of 1 A, making it suitable for large current loads.
  • High Current Amplification: With a DC Current Gain (hFE) of 85 @ 500mA, 1V, this transistor offers high current amplification ability, enhancing the sensitivity and stability of circuits.
  • High-Frequency Capability: The transistor has a frequency transition of up to 100 MHz, making it ideal for high-frequency applications.
  • Efficient Power Handling: It has a maximum power of 1.5 W and a maximum collector-emitter breakdown voltage of 20 V, ensuring it can handle large-scale electrical energy conversion and control tasks.
  • Low Vce Saturation: The Vce Saturation (Max) @ Ib, Ic is 500 mV @ 100 mA, 1 A, which helps in reducing energy consumption and improving energy utilization efficiency.
  • Compact Packaging: The SOT-23-6 (TSOT-23-6) package is convenient for integration onto circuit boards and supports mass production with Tape & Reel packaging.

Applications

  • Analog Switch: The BCP 69US E6327 can be used to control the on and off of analog signals, such as in audio applications where it can amplify and cut off sound signals.
  • Drive Circuit: It can drive various load devices, including electric motors and displays.
  • Microwave Amplifier: Its high-frequency response characteristics make it suitable for microwave amplifier circuits, including common emitter, common base, and common collector amplifiers.
  • Constant Current Source: The transistor can be used as a constant current source in various DC power supply circuits, providing stable output current by adjusting circuit parameters.

Q & A

  1. What is the maximum collector current of the BCP 69US E6327 transistor?

    The maximum collector current of the BCP 69US E6327 transistor is 1 A.

  2. What is the collector-emitter voltage (VCEO) maximum of the BCP 69US E6327?

    The collector-emitter voltage (VCEO) maximum of the BCP 69US E6327 is 20 V.

  3. What is the DC Current Gain (hFE) of the BCP 69US E6327 transistor?

    The DC Current Gain (hFE) of the BCP 69US E6327 transistor is 85 @ 500mA, 1V.

  4. What is the frequency transition capability of the BCP 69US E6327 transistor?

    The frequency transition capability of the BCP 69US E6327 transistor is up to 100 MHz.

  5. What is the maximum power handling of the BCP 69US E6327 transistor?

    The maximum power handling of the BCP 69US E6327 transistor is 1.5 W.

  6. What type of packaging does the BCP 69US E6327 transistor use?

    The BCP 69US E6327 transistor uses SOT-23-6 (TSOT-23-6) packaging and is available in Tape & Reel (TR) format.

  7. Is the BCP 69US E6327 transistor RoHS compliant?

    Yes, the BCP 69US E6327 transistor is Lead Free and RoHS compliant.

  8. What are some common applications of the BCP 69US E6327 transistor?

    The BCP 69US E6327 transistor is commonly used in analog switches, drive circuits, microwave amplifiers, and as a constant current source.

  9. What is the Vce Saturation (Max) @ Ib, Ic of the BCP 69US E6327 transistor?

    The Vce Saturation (Max) @ Ib, Ic of the BCP 69US E6327 transistor is 500 mV @ 100 mA, 1 A.

  10. Why is the BCP 69US E6327 transistor suitable for high-frequency applications?

    The BCP 69US E6327 transistor is suitable for high-frequency applications due to its high frequency transition capability of up to 100 MHz.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):20 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 100mA, 1A
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:85 @ 500mA, 1V
Power - Max:1.5 W
Frequency - Transition:100MHz
Operating Temperature:- 
Mounting Type:Surface Mount
Package / Case:SOT-23-6 Thin, TSOT-23-6
Supplier Device Package:PG-TSOP6-6
0 Remaining View Similar

In Stock

-
427

Please send RFQ , we will respond immediately.

Same Series
DD62M3200T20/AA
DD62M3200T20/AA
CONN D-SUB HD PLUG 62P VERT SLDR
CBC9W4S10HE2X/AA
CBC9W4S10HE2X/AA
CONN D-SUB RCPT 9POS CRIMP
DD15S20LV5S
DD15S20LV5S
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S20000/AA
DD26S20000/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200E2X/AA
DD26S200E2X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S10H00/AA
DD26S10H00/AA
CONN D-SUB HD RCPT 26POS CRIMP
CBC9W4S10HV5S/AA
CBC9W4S10HV5S/AA
CONN D-SUB RCPT 9POS CRIMP
CBC9W4S10HE3S/AA
CBC9W4S10HE3S/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S2S50V5X/AA
DD26S2S50V5X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20WTX
DD26S20WTX
CONN D-SUB HD RCPT 26P SLDR CUP
CBC47W1S1S50V5S
CBC47W1S1S50V5S
CONN D-SUB RCPT 47POS CRIMP
DD26S20L00
DD26S20L00
CONN D-SUB HD RCPT 26P SLDR CUP

Related Product By Categories

MJE5852G
MJE5852G
onsemi
TRANS PNP 400V 8A TO220
BC857B
BC857B
Infineon Technologies
TRANS PNP 45V 0.1A SOT23-3
PDTC114TT,215
PDTC114TT,215
NXP Semiconductors
NEXPERIA PDTC114TT - SMALL SIGNA
MMBT2222ALT3G
MMBT2222ALT3G
onsemi
TRANS NPN 40V 0.6A SOT23-3
MJB44H11G
MJB44H11G
onsemi
TRANS NPN 80V 10A D2PAK
BC856AQBZ
BC856AQBZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
BCX56-16115
BCX56-16115
NXP USA Inc.
NOW NEXPERIA SMALL SIGNAL BIPOLA
TIP122FP
TIP122FP
STMicroelectronics
TRANS NPN DARL 100V 5A TO220FP
TIP126-BP
TIP126-BP
Micro Commercial Co
TRANS PNP DARL 80V 5A TO220AB
BC846AWT1
BC846AWT1
onsemi
TRANS NPN 65V 0.1A SC70-3
BC327-40ZL1G
BC327-40ZL1G
onsemi
TRANS PNP 45V 0.8A TO92
SS8050-C-AP
SS8050-C-AP
Micro Commercial Co
TRANS NPN 25V 1.5A TO92

Related Product By Brand

BAS28E6433HTMA1
BAS28E6433HTMA1
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT143
BAS 40-06 B5003
BAS 40-06 B5003
Infineon Technologies
DIODE ARRAY SCHOTTKY 40V SOT23
BAS2103WE6327HTSA1
BAS2103WE6327HTSA1
Infineon Technologies
DIODE GEN PURP 200V 250MA SOD323
BAS16-03WE6327
BAS16-03WE6327
Infineon Technologies
RECTIFIER DIODE, 0.25A, 80V
BC817UPNE6327HTSA1
BC817UPNE6327HTSA1
Infineon Technologies
TRANS NPN/PNP 45V 0.5A SC74
BC856UE6327HTSA1
BC856UE6327HTSA1
Infineon Technologies
TRANS 2PNP 65V 0.1A SC74-6
BFS17WH6393XTSA1
BFS17WH6393XTSA1
Infineon Technologies
RF TRANS NPN SOT323-3
BC856BWE6327BTSA1
BC856BWE6327BTSA1
Infineon Technologies
TRANS PNP 65V 0.1A SOT323
BCP 69US E6327
BCP 69US E6327
Infineon Technologies
TRANS PNP 20V 1A TSOP6-6
BC 847C B5003
BC 847C B5003
Infineon Technologies
TRANS NPN 45V 0.1A SOT23
BTN8962TAAUMA1
BTN8962TAAUMA1
Infineon Technologies
IC MOTOR DRIVER PAR TO263-7
BTS5030-2EKA
BTS5030-2EKA
Infineon Technologies
BTS5030 - PROFET - SMART HIGH SI