BCP 69US E6327
  • Share:

Infineon Technologies BCP 69US E6327

Manufacturer No:
BCP 69US E6327
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
TRANS PNP 20V 1A TSOP6-6
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCP 69US E6327 is a high-performance PNP bipolar transistor manufactured by Infineon Technologies. This transistor is designed to utilize the movement of charge carriers (electrons and holes) within semiconductor materials, making it suitable for various high-demand application scenarios. The BCP 69US E6327 operates through the formation of a PN junction at the boundary between two different concentrations of charge carrier regions, ensuring efficient and reliable operation.

Key Specifications

Specification Value
Transistor Polarity PNP
Configuration Single
Maximum DC Collector Current (Ic) 1 A
Collector-Emitter Voltage (VCEO) Max 20 V
DC Current Gain (hFE) Min @ Ic and Vce 85 @ 500mA, 1V
Frequency Transition 100 MHz
Maximum Power 1.5 W
Vce Saturation (Max) @ Ib, Ic 500 mV @ 100 mA, 1 A
Package Type SOT-23-6 (TSOT-23-6)
Packaging Tape & Reel (TR)
RoHS Status Lead Free / RoHS Compliant

Key Features

  • High Current Handling: The BCP 69US E6327 can handle a maximum collector current of 1 A, making it suitable for large current loads.
  • High Current Amplification: With a DC Current Gain (hFE) of 85 @ 500mA, 1V, this transistor offers high current amplification ability, enhancing the sensitivity and stability of circuits.
  • High-Frequency Capability: The transistor has a frequency transition of up to 100 MHz, making it ideal for high-frequency applications.
  • Efficient Power Handling: It has a maximum power of 1.5 W and a maximum collector-emitter breakdown voltage of 20 V, ensuring it can handle large-scale electrical energy conversion and control tasks.
  • Low Vce Saturation: The Vce Saturation (Max) @ Ib, Ic is 500 mV @ 100 mA, 1 A, which helps in reducing energy consumption and improving energy utilization efficiency.
  • Compact Packaging: The SOT-23-6 (TSOT-23-6) package is convenient for integration onto circuit boards and supports mass production with Tape & Reel packaging.

Applications

  • Analog Switch: The BCP 69US E6327 can be used to control the on and off of analog signals, such as in audio applications where it can amplify and cut off sound signals.
  • Drive Circuit: It can drive various load devices, including electric motors and displays.
  • Microwave Amplifier: Its high-frequency response characteristics make it suitable for microwave amplifier circuits, including common emitter, common base, and common collector amplifiers.
  • Constant Current Source: The transistor can be used as a constant current source in various DC power supply circuits, providing stable output current by adjusting circuit parameters.

Q & A

  1. What is the maximum collector current of the BCP 69US E6327 transistor?

    The maximum collector current of the BCP 69US E6327 transistor is 1 A.

  2. What is the collector-emitter voltage (VCEO) maximum of the BCP 69US E6327?

    The collector-emitter voltage (VCEO) maximum of the BCP 69US E6327 is 20 V.

  3. What is the DC Current Gain (hFE) of the BCP 69US E6327 transistor?

    The DC Current Gain (hFE) of the BCP 69US E6327 transistor is 85 @ 500mA, 1V.

  4. What is the frequency transition capability of the BCP 69US E6327 transistor?

    The frequency transition capability of the BCP 69US E6327 transistor is up to 100 MHz.

  5. What is the maximum power handling of the BCP 69US E6327 transistor?

    The maximum power handling of the BCP 69US E6327 transistor is 1.5 W.

  6. What type of packaging does the BCP 69US E6327 transistor use?

    The BCP 69US E6327 transistor uses SOT-23-6 (TSOT-23-6) packaging and is available in Tape & Reel (TR) format.

  7. Is the BCP 69US E6327 transistor RoHS compliant?

    Yes, the BCP 69US E6327 transistor is Lead Free and RoHS compliant.

  8. What are some common applications of the BCP 69US E6327 transistor?

    The BCP 69US E6327 transistor is commonly used in analog switches, drive circuits, microwave amplifiers, and as a constant current source.

  9. What is the Vce Saturation (Max) @ Ib, Ic of the BCP 69US E6327 transistor?

    The Vce Saturation (Max) @ Ib, Ic of the BCP 69US E6327 transistor is 500 mV @ 100 mA, 1 A.

  10. Why is the BCP 69US E6327 transistor suitable for high-frequency applications?

    The BCP 69US E6327 transistor is suitable for high-frequency applications due to its high frequency transition capability of up to 100 MHz.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):20 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 100mA, 1A
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:85 @ 500mA, 1V
Power - Max:1.5 W
Frequency - Transition:100MHz
Operating Temperature:- 
Mounting Type:Surface Mount
Package / Case:SOT-23-6 Thin, TSOT-23-6
Supplier Device Package:PG-TSOP6-6
0 Remaining View Similar

In Stock

-
427

Please send RFQ , we will respond immediately.

Same Series
DD15S20LV5X
DD15S20LV5X
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200TS
DD15S200TS
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HV30/AA
CBC13W3S10HV30/AA
CONN D-SUB RCPT 13POS CRIMP
CBC9W4S10HT2S/AA
CBC9W4S10HT2S/AA
CONN D-SUB RCPT 9POS CRIMP
DD44S32S0TS/AA
DD44S32S0TS/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD15S20JV5S/AA
DD15S20JV5S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10H0S/AA
CBC13W3S10H0S/AA
CONN D-SUB RCPT 13POS CRIMP
CBC13W3S10HE3S/AA
CBC13W3S10HE3S/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S2S50T2X/AA
DD26S2S50T2X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32000X
DD44S32000X
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S200V5X
DD26S200V5X
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S60V3X
DD44S32S60V3X
CONN D-SUB HD RCPT 44P VERT SLDR

Related Product By Categories

BCP54-10,135
BCP54-10,135
Nexperia USA Inc.
TRANS NPN 45V 1A SOT223
BCP56-16/DG/B2115
BCP56-16/DG/B2115
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
BC847AMB,315
BC847AMB,315
Nexperia USA Inc.
TRANS NPN 45V 0.1A DFN1006B-3
BC848B-TP
BC848B-TP
Micro Commercial Co
TRANS NPN 30V 0.1A SOT23
MJF6388G
MJF6388G
onsemi
TRANS NPN DARL 100V 10A TO220FP
BC848BWT1G
BC848BWT1G
onsemi
TRANS NPN 30V 0.1A SC70-3
PBSS5350X,146
PBSS5350X,146
Nexperia USA Inc.
TRANS PNP 50V 3A SOT89
BLF278
BLF278
Ampleon USA Inc.
RF PFET, 2-ELEMENT, VERY HIGH FR
BCX56-10R1
BCX56-10R1
onsemi
TRANS NPN 80V 1A SOT89-3
KSA1220AYS
KSA1220AYS
onsemi
TRANS PNP 160V 1.2A TO126
TIP30CTU
TIP30CTU
onsemi
TRANS PNP 100V 1A TO220-3
2STF1340
2STF1340
STMicroelectronics
TRANS NPN 40V 3A SOT89-3

Related Product By Brand

BAV 70S H6327
BAV 70S H6327
Infineon Technologies
HIGH SPEED SWITCHING DIODE
BAS70-06E6433
BAS70-06E6433
Infineon Technologies
SCHOTTKY DIODE - HIGH SPEED SWIT
BAS40-06WH6327
BAS40-06WH6327
Infineon Technologies
RECTIFIER DIODE, SCHOTTKY
BAV 70W E6433
BAV 70W E6433
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT323
BC847PNE6327BTSA1
BC847PNE6327BTSA1
Infineon Technologies
TRANS NPN/PNP 45V 0.1A SOT363-6
BC848BW
BC848BW
Infineon Technologies
TRANS NPN 30V 0.1A SOT323
BC 846B B5003
BC 846B B5003
Infineon Technologies
TRANS NPN 65V 0.1A SOT23
BSS84PW
BSS84PW
Infineon Technologies
MOSFET P-CH 60V 150MA SOT323-3
SAK-TC1796-256F150EBC
SAK-TC1796-256F150EBC
Infineon Technologies
32-BIT RISC FLASH MCU
TLE72593GEXUMA1
TLE72593GEXUMA1
Infineon Technologies
IC TRANSCEIVER 1/1 DSO-8
BTS716GBXUMA1
BTS716GBXUMA1
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 DSO-20
TDA21470AUMA1
TDA21470AUMA1
Infineon Technologies
INT. POWERSTAGE/DRIVER