BC857AE6327
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Infineon Technologies BC857AE6327

Manufacturer No:
BC857AE6327
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
TRANS PNP 45V 0.1A SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC857AE6327 is a PNP general-purpose transistor produced by Infineon Technologies. It is part of the BC857 series, known for its reliability and versatility in various electronic applications. This transistor is housed in a SOT23 package, making it suitable for surface-mount technology (SMT) and compact designs.

Key Specifications

Parameter Value Unit
Collector-Base Voltage (VCBO) -50 V
Collector-Emitter Voltage (VCEO) -45 V
Emitter-Base Voltage (VEBO) -5 V
Collector Current (IC) -100 mA
Peak Collector Current (ICM) -200 mA
Peak Base Current (IBM) -200 mA
Total Power Dissipation (Ptot) 250 mW
Junction Temperature (Tj) -150 °C
Ambient Temperature (Tamb) -65 to 150 °C
Storage Temperature (Tstg) -65 to 150 °C
DC Current Gain (hFE) 125 - 800
Package Type SOT23

Key Features

  • General-Purpose Transistor: Suitable for a wide range of applications requiring a PNP transistor.
  • High Current Gain: DC current gain (hFE) ranges from 125 to 800, ensuring reliable amplification.
  • Compact Package: SOT23 package makes it ideal for surface-mount technology and compact designs.
  • Low Power Consumption: Total power dissipation of 250 mW, suitable for low-power applications.
  • Wide Temperature Range: Operates within an ambient temperature range of -65°C to 150°C.

Applications

  • Amplifiers and Switches: Can be used in amplifier circuits and as switches in various electronic devices.
  • Automotive Electronics: Suitable for use in automotive systems due to its robust temperature range and reliability.
  • Consumer Electronics: Used in a variety of consumer electronic devices such as audio equipment, home appliances, and more.
  • Industrial Control Systems: Can be integrated into industrial control systems for reliable operation.

Q & A

  1. What is the collector-emitter voltage (VCEO) of the BC857AE6327 transistor?

    The collector-emitter voltage (VCEO) of the BC857AE6327 transistor is -45 V.

  2. What is the maximum collector current (IC) for this transistor?

    The maximum collector current (IC) for the BC857AE6327 transistor is -100 mA.

  3. What is the package type of the BC857AE6327 transistor?

    The BC857AE6327 transistor is housed in a SOT23 package.

  4. What is the operating temperature range for this transistor?

    The BC857AE6327 transistor operates within an ambient temperature range of -65°C to 150°C.

  5. What is the total power dissipation (Ptot) of the BC857AE6327 transistor?

    The total power dissipation (Ptot) of the BC857AE6327 transistor is 250 mW.

  6. What are some common applications of the BC857AE6327 transistor?

    The BC857AE6327 transistor is commonly used in amplifiers, switches, automotive electronics, consumer electronics, and industrial control systems.

  7. What is the DC current gain (hFE) range for this transistor?

    The DC current gain (hFE) range for the BC857AE6327 transistor is 125 to 800.

  8. Can the BC857AE6327 transistor be used in high-temperature environments?

    Yes, the BC857AE6327 transistor can operate in high-temperature environments up to 150°C.

  9. Is the BC857AE6327 transistor suitable for surface-mount technology (SMT)?

    Yes, the BC857AE6327 transistor is suitable for surface-mount technology due to its SOT23 package.

  10. What is the emitter-base voltage (VEBO) of the BC857AE6327 transistor?

    The emitter-base voltage (VEBO) of the BC857AE6327 transistor is -5 V.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:125 @ 2mA, 5V
Power - Max:330 mW
Frequency - Transition:250MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:PG-SOT23
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Similar Products

Part Number BC857AE6327 BC857BE6327
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 125 @ 2mA, 5V 220 @ 2mA, 5V
Power - Max 330 mW 330 mW
Frequency - Transition 250MHz 250MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package PG-SOT23 PG-SOT23

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