MMBT100A
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onsemi MMBT100A

Manufacturer No:
MMBT100A
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS NPN 45V 0.5A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMBT100A is a general-purpose NPN bipolar junction transistor (BJT) produced by onsemi. It is designed for low-power surface mount applications and is housed in the SOT-23 package. This transistor is suitable for a wide range of general-purpose amplifier applications due to its robust specifications and compact packaging.

Key Specifications

ParameterValueUnits
Transistor TypeNPN
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)45 V
Voltage - Collector Base Breakdown (Max)75 V
Voltage - Emitter Base Breakdown (Max)5 V
Package TypeSOT-23

Key Features

  • General-purpose amplifier applications
  • Low-power surface mount design
  • Compact SOT-23 packaging
  • High collector-emitter voltage (Vce) of up to 45 V
  • High collector-base voltage (Vcb) of up to 75 V
  • Low emitter-base voltage (Veb) of up to 5 V

Applications

The MMBT100A is versatile and can be used in various electronic circuits, including:

  • General-purpose amplifiers
  • Switching circuits
  • Audio amplifiers
  • Automotive and industrial control systems
  • Consumer electronics

Q & A

  1. What is the maximum collector current of the MMBT100A?
    The maximum collector current of the MMBT100A is 500 mA.
  2. What is the collector-emitter breakdown voltage of the MMBT100A?
    The collector-emitter breakdown voltage is 45 V.
  3. What package type is the MMBT100A housed in?
    The MMBT100A is housed in the SOT-23 package.
  4. What are the typical applications of the MMBT100A?
    The MMBT100A is used in general-purpose amplifier applications, switching circuits, audio amplifiers, and more.
  5. Is the MMBT100A suitable for high-power applications?
    No, the MMBT100A is designed for low-power surface mount applications.
  6. What is the polarity of the MMBT100A transistor?
    The MMBT100A is an NPN transistor.
  7. What is the maximum collector-base voltage of the MMBT100A?
    The maximum collector-base voltage is 75 V.
  8. What is the maximum emitter-base voltage of the MMBT100A?
    The maximum emitter-base voltage is 5 V.
  9. Is the MMBT100A still in production?
    No, the MMBT100A is listed as obsolete.
  10. Where can I find detailed specifications for the MMBT100A?
    Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Digi-Key and Mouser Electronics.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:400mV @ 20mA, 200mA
Current - Collector Cutoff (Max):50nA
DC Current Gain (hFE) (Min) @ Ic, Vce:300 @ 10mA, 1V
Power - Max:350 mW
Frequency - Transition:250MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3
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Similar Products

Part Number MMBT100A MMBT200A MMBT100
Manufacturer onsemi onsemi onsemi
Product Status Obsolete Obsolete Active
Transistor Type NPN PNP NPN
Current - Collector (Ic) (Max) 500 mA 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 400mV @ 20mA, 200mA 400mV @ 20mA, 200mA 400mV @ 20mA, 200mA
Current - Collector Cutoff (Max) 50nA 50nA 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 10mA, 1V 300 @ 10mA, 1V 100 @ 150mA, 5V
Power - Max 350 mW 350 mW 350 mW
Frequency - Transition 250MHz 250MHz 250MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 SOT-23-3 SOT-23-3

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