SMMBTA42LT1G
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onsemi SMMBTA42LT1G

Manufacturer No:
SMMBTA42LT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS NPN 300V 0.5A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The SMMBTA42LT1G is a high-voltage NPN bipolar transistor manufactured by onsemi. This device is designed for general-purpose amplifier applications and is housed in the SOT-23 (SC-59, TO-236) package, which is suitable for low-power surface mount applications. The transistor is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements. It is also Pb-free, halogen-free/BFR-free, and RoHS compliant.

Key Specifications

Characteristic Symbol Value Unit
Polarity - NPN -
Type - General Purpose -
Collector-Emitter Voltage (Max) VCEO 300 Vdc
Collector-Base Voltage (Max) VCBO 300 Vdc
Emitter-Base Voltage (Max) VEBO 6.0 Vdc
Collector Current (Continuous) IC 500 mA mAdc
Power Dissipation (Total) PD 225 mW mW
DC Current Gain (Min) hFE 25 @ 1 mA, 10 Vdc -
Transition Frequency fT 50 MHz MHz
Operating Temperature TJ -55°C to 150°C °C
Package Style - SOT-23 (SC-59, TO-236) -
Mounting Method - Surface Mount -

Key Features

  • AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.
  • Pb-free, halogen-free/BFR-free, and RoHS compliant, ensuring environmental compliance.
  • High collector-emitter voltage (VCEO) of 300 V, suitable for high-voltage applications.
  • Low power dissipation of 225 mW, suitable for surface mount applications.
  • Transition frequency of 50 MHz, indicating good high-frequency performance.
  • Wide operating temperature range from -55°C to 150°C, ensuring reliability in various environments).

Applications

The SMMBTA42LT1G is designed for general-purpose amplifier applications. It is particularly suitable for:

  • Automotive systems due to its AEC-Q101 qualification and PPAP capability).
  • High-voltage amplifier circuits where its high VCEO rating is beneficial).
  • Surface mount applications where low power dissipation is critical).
  • High-frequency applications such as radio frequency (RF) amplifiers and switching circuits due to its transition frequency of 50 MHz).

Q & A

  1. What is the polarity of the SMMBTA42LT1G transistor?

    The SMMBTA42LT1G is an NPN bipolar transistor).

  2. What is the maximum collector-emitter voltage (VCEO) of the SMMBTA42LT1G?

    The maximum collector-emitter voltage (VCEO) is 300 Vdc).

  3. What is the continuous collector current (IC) rating of the SMMBTA42LT1G?

    The continuous collector current (IC) rating is 500 mA).

  4. What is the power dissipation rating of the SMMBTA42LT1G?

    The total power dissipation rating is 225 mW).

  5. What is the DC current gain (hFE) of the SMMBTA42LT1G?

    The minimum DC current gain (hFE) is 25 at IC = 1 mA and VCE = 10 Vdc).

  6. What is the transition frequency (fT) of the SMMBTA42LT1G?

    The transition frequency (fT) is 50 MHz).

  7. What is the operating temperature range of the SMMBTA42LT1G?

    The operating temperature range is from -55°C to 150°C).

  8. Is the SMMBTA42LT1G RoHS compliant?

    Yes, the SMMBTA42LT1G is Pb-free, halogen-free/BFR-free, and RoHS compliant).

  9. What package style is the SMMBTA42LT1G available in?

    The SMMBTA42LT1G is available in the SOT-23 (SC-59, TO-236) package).

  10. What mounting method is used for the SMMBTA42LT1G?

    The SMMBTA42LT1G uses surface mount technology).

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):300 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 2mA, 20mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 30mA, 10V
Power - Max:225 mW
Frequency - Transition:50MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
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Same Series
MMBTA42LT1G
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MMBTA42LT3G
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MMBTA43LT1
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Similar Products

Part Number SMMBTA42LT1G SMMBTA92LT1G SMMBTA42LT3G
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
Transistor Type NPN PNP NPN
Current - Collector (Ic) (Max) 500 mA 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 300 V 300 V 300 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 2mA, 20mA 500mV @ 2mA, 20mA 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max) 100nA (ICBO) 250nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 30mA, 10V 25 @ 30mA, 10V 40 @ 30mA, 10V
Power - Max 225 mW 300 mW 225 mW
Frequency - Transition 50MHz 50MHz 50MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236)

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