MMBT2222ALT1
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onsemi MMBT2222ALT1

Manufacturer No:
MMBT2222ALT1
Manufacturer:
onsemi
Package:
Cut Tape (CT)
Description:
TRANS NPN 40V 600MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMBT2222ALT1 is a general-purpose NPN silicon transistor manufactured by onsemi. It is designed for a wide range of amplifier applications and is known for its reliability and performance. This transistor is housed in the SOT-23 package, making it suitable for low-power surface mount applications. It is Pb-free, halogen-free, and RoHS compliant, ensuring environmental sustainability and compliance with regulatory standards.

Key Specifications

CharacteristicSymbolValueUnit
Collector-Emitter VoltageVCEO40Vdc
Collector-Base VoltageVCBO75Vdc
Emitter-Base VoltageVEBO6.0Vdc
Collector Current - ContinuousIC600mAdc
DC Current Gain (IC = 10 mAdc, VCE = 10 Vdc)hFE75
Collector-Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc)VCE(sat)0.3Vdc
Base-Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc)VBE(sat)1.2Vdc
Current-Gain - Bandwidth Product (IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)fT300MHz
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)Cobo8.0pF
Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)Cibo30pF
Junction and Storage Temperature RangeTJ, Tstg−55 to +150°C

Key Features

  • Pb-free, halogen-free, and RoHS compliant, ensuring environmental sustainability and regulatory compliance.
  • AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
  • High DC current gain (hFE) of up to 75 at IC = 10 mAdc and VCE = 10 Vdc.
  • Low collector-emitter saturation voltage (VCE(sat)) of 0.3 Vdc at IC = 150 mAdc and IB = 15 mAdc.
  • High current-gain - bandwidth product (fT) of 300 MHz at IC = 20 mAdc, VCE = 20 Vdc, and f = 100 MHz.
  • Compact SOT-23 package suitable for low-power surface mount applications.

Applications

The MMBT2222ALT1 is versatile and can be used in a variety of applications, including:

  • General-purpose amplifier circuits.
  • Switching circuits.
  • Automotive electronics due to its AEC-Q101 qualification.
  • Consumer electronics where low power and high reliability are required.
  • Industrial control systems.

Q & A

  1. What is the maximum collector-emitter voltage (VCEO) of the MMBT2222ALT1?
    The maximum collector-emitter voltage (VCEO) is 40 Vdc.
  2. What is the continuous collector current (IC) rating of the MMBT2222ALT1?
    The continuous collector current (IC) rating is 600 mAdc.
  3. Is the MMBT2222ALT1 RoHS compliant?
    Yes, the MMBT2222ALT1 is Pb-free, halogen-free, and RoHS compliant.
  4. What is the typical DC current gain (hFE) of the MMBT2222ALT1?
    The typical DC current gain (hFE) is 75 at IC = 10 mAdc and VCE = 10 Vdc.
  5. What is the collector-emitter saturation voltage (VCE(sat)) of the MMBT2222ALT1?
    The collector-emitter saturation voltage (VCE(sat)) is 0.3 Vdc at IC = 150 mAdc and IB = 15 mAdc.
  6. What is the current-gain - bandwidth product (fT) of the MMBT2222ALT1?
    The current-gain - bandwidth product (fT) is 300 MHz at IC = 20 mAdc, VCE = 20 Vdc, and f = 100 MHz.
  7. What is the junction and storage temperature range of the MMBT2222ALT1?
    The junction and storage temperature range is −55 to +150 °C.
  8. Is the MMBT2222ALT1 suitable for automotive applications?
    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
  9. What package type is the MMBT2222ALT1 available in?
    The MMBT2222ALT1 is available in the SOT-23 package.
  10. What are some common applications of the MMBT2222ALT1?
    Common applications include general-purpose amplifier circuits, switching circuits, automotive electronics, consumer electronics, and industrial control systems.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):600 mA
Voltage - Collector Emitter Breakdown (Max):40 V
Vce Saturation (Max) @ Ib, Ic:1V @ 50mA, 500mA
Current - Collector Cutoff (Max):10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 10V
Power - Max:225 mW
Frequency - Transition:300MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
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SMMBT2222ALT1G
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MMBT2222ALT1
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Similar Products

Part Number MMBT2222ALT1 MMBT2222ALT1G MMBT2222ALT1H MMBT2222LT1 MMBT2222AWT1
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Active Active Obsolete Obsolete
Transistor Type NPN NPN - - NPN
Current - Collector (Ic) (Max) 600 mA 600 mA - - 600 mA
Voltage - Collector Emitter Breakdown (Max) 40 V 40 V - - 40 V
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA 1V @ 50mA, 500mA - - 300mV @ 15mA, 150mA
Current - Collector Cutoff (Max) 10nA (ICBO) 10nA (ICBO) - - -
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 10V 100 @ 150mA, 10V - - 100 @ 150mA, 10V
Power - Max 225 mW 225 mW - - 150 mW
Frequency - Transition 300MHz 300MHz - - 300MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) - - -
Mounting Type Surface Mount Surface Mount - - Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 - - SC-70, SOT-323
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) - - SC-70-3 (SOT323)

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