MMBT2222AWT1
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onsemi MMBT2222AWT1

Manufacturer No:
MMBT2222AWT1
Manufacturer:
onsemi
Package:
Cut Tape (CT)
Description:
TRANS NPN 40V 600MA SOT323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMBT2222AWT1 is a general-purpose NPN Bipolar Junction Transistor (BJT) manufactured by Onsemi. It is designed for surface-mount applications and is suitable for a wide range of electronic circuits. This transistor is part of the MMBT2222 series, known for its reliability and versatility in various amplifier and switching applications.

Key Specifications

ParameterValueUnit
Transistor TypeNPN-
Package TypeSOT-23-
Maximum Collector Current600mA
Maximum Collector-Emitter Voltage30V
Maximum Base-Emitter Voltage5V
Junction and Storage Temperature-55 to +150°C
Thermal Resistance, Junction-to-Ambient280°C/W

Key Features

  • General-purpose amplifier and switching applications
  • Surface-mount SOT-23 package
  • High current gain (beta) for reliable operation
  • Low noise and high stability
  • Wide operating temperature range (-55°C to +150°C)

Applications

  • General-purpose amplifiers
  • Switching circuits
  • Audio amplifiers
  • Automotive electronics
  • Consumer electronics

Q & A

  1. What is the MMBT2222AWT1 transistor type? The MMBT2222AWT1 is an NPN Bipolar Junction Transistor (BJT).
  2. What is the maximum collector current of the MMBT2222AWT1? The maximum collector current is 600 mA.
  3. What is the maximum collector-emitter voltage of the MMBT2222AWT1? The maximum collector-emitter voltage is 30 V.
  4. What is the package type of the MMBT2222AWT1? The package type is SOT-23.
  5. What is the junction and storage temperature range of the MMBT2222AWT1? The junction and storage temperature range is -55°C to +150°C.
  6. What are some common applications of the MMBT2222AWT1? Common applications include general-purpose amplifiers, switching circuits, audio amplifiers, automotive electronics, and consumer electronics.
  7. What is the thermal resistance, junction-to-ambient of the MMBT2222AWT1? The thermal resistance, junction-to-ambient is 280 °C/W.
  8. Who is the manufacturer of the MMBT2222AWT1? The manufacturer is Onsemi.
  9. What is the significance of the 'AWT1' suffix in the MMBT2222AWT1? The 'AWT1' suffix indicates the specific package and configuration of the transistor.
  10. Is the MMBT2222AWT1 suitable for high-frequency applications? While it can be used in various applications, it is not specifically optimized for high-frequency use.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):600 mA
Voltage - Collector Emitter Breakdown (Max):40 V
Vce Saturation (Max) @ Ib, Ic:300mV @ 15mA, 150mA
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 10V
Power - Max:150 mW
Frequency - Transition:300MHz
Operating Temperature:- 
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:SC-70-3 (SOT323)
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Same Series
MMBT2222AWT3G
MMBT2222AWT3G
TRANS NPN 40V 0.6A SC70-3
MMBT2222AWT1G
MMBT2222AWT1G
TRANS NPN 40V 0.6A SC70-3
MMBT2222AWT1
MMBT2222AWT1
TRANS NPN 40V 600MA SOT323

Similar Products

Part Number MMBT2222AWT1 MMBT2222AWT1G MMBT2222AWT1H MMBT2222ALT1
Manufacturer onsemi onsemi onsemi onsemi
Product Status Obsolete Active Active Obsolete
Transistor Type NPN NPN - NPN
Current - Collector (Ic) (Max) 600 mA 600 mA - 600 mA
Voltage - Collector Emitter Breakdown (Max) 40 V 40 V - 40 V
Vce Saturation (Max) @ Ib, Ic 300mV @ 15mA, 150mA 1V @ 50mA, 500mA - 1V @ 50mA, 500mA
Current - Collector Cutoff (Max) - - - 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 10V 100 @ 150mA, 10V - 100 @ 150mA, 10V
Power - Max 150 mW 150 mW - 225 mW
Frequency - Transition 300MHz 300MHz - 300MHz
Operating Temperature - -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount - Surface Mount
Package / Case SC-70, SOT-323 SC-70, SOT-323 - TO-236-3, SC-59, SOT-23-3
Supplier Device Package SC-70-3 (SOT323) SC-70-3 (SOT323) - SOT-23-3 (TO-236)

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