NTMFS4833NT1G
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onsemi NTMFS4833NT1G

Manufacturer No:
NTMFS4833NT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 16A/156A 5DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The NTMFS4833NT1G is a high-performance N-Channel MOSFET produced by onsemi. This device is designed for applications requiring high current handling and low on-resistance. The MOSFET features a single N-Channel configuration in an SO-8FL package, making it suitable for a variety of power management and switching applications.

With its robust specifications, the NTMFS4833NT1G is ideal for use in CPU power delivery, DC-DC converters, and low side switching. The device is lead-free, ensuring compliance with environmental regulations.

Key Specifications

Parameter Symbol Value Unit
Drain-to-Source Voltage VDS 30 V
Gate-to-Source Voltage VGS ±20 V
Continuous Drain Current (TA = 25°C) ID 28 A
Continuous Drain Current (TA = 85°C) ID 20.5 A
Maximum Drain Current ID 191 A
On Resistance (RDS(on)) RDS(on) 2.0 mΩ @ 10 V, 3.0 mΩ @ 4.5 V
Power Dissipation (TA = 25°C) PD 2.7 W W
Junction-to-Ambient Thermal Resistance (Steady State) RJA 45.6 °C/W °C/W
Operating Temperature Range TJ -55°C to +150°C °C
Package Type SO-8FL
Number of Pins 8

Key Features

  • Low RDS(on) to minimize conduction losses
  • Low capacitance to minimize driver losses
  • Optimized gate charge to minimize switching losses
  • Pb-free devices, ensuring environmental compliance
  • High current handling capability up to 191 A
  • Wide operating temperature range from -55°C to +150°C

Applications

  • CPU Power Delivery
  • DC-DC Converters
  • Low Side Switching
  • Refer to Application Note AND8195/D for more detailed application information

Q & A

  1. What is the maximum drain-to-source voltage of the NTMFS4833NT1G MOSFET?

    The maximum drain-to-source voltage is 30 V.

  2. What is the continuous drain current at 25°C and 85°C?

    The continuous drain current is 28 A at 25°C and 20.5 A at 85°C.

  3. What is the on-resistance (RDS(on)) of the MOSFET?

    The on-resistance is 2.0 mΩ at VGS = 10 V and 3.0 mΩ at VGS = 4.5 V.

  4. What is the maximum power dissipation at 25°C?

    The maximum power dissipation is 2.7 W at 25°C.

  5. What is the junction-to-ambient thermal resistance?

    The junction-to-ambient thermal resistance is 45.6 °C/W in steady state conditions.

  6. What is the operating temperature range of the MOSFET?

    The operating temperature range is from -55°C to +150°C.

  7. What package type does the NTMFS4833NT1G come in?

    The MOSFET comes in an SO-8FL package.

  8. How many pins does the NTMFS4833NT1G have?

    The MOSFET has 8 pins.

  9. What are some typical applications of the NTMFS4833NT1G?

    Typical applications include CPU power delivery, DC-DC converters, and low side switching.

  10. Is the NTMFS4833NT1G Pb-free?

    Yes, the NTMFS4833NT1G is a Pb-free device.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:16A (Ta), 156A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:88 nC @ 11.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5600 pF @ 12 V
FET Feature:- 
Power Dissipation (Max):910mW (Ta), 125W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
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Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V 30 V 30 V 30 V 30 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 16A (Ta), 156A (Tc) 13A (Ta), 130A (Tc) 9.5A (Ta), 64A (Tc) 13A (Ta), 130A (Tc) 11A (Ta), 90A (Tc) 10A (Ta), 74A (Tc) 20A (Ta), 210A (Tc) 16A (Ta), 156A (Tc) 6.9A (Ta), 30A (Tc) 16A (Ta), 191A (Tc) 16A (Ta), 156A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 11.5V 4.5V, 11.5V 4.5V, 11.5V 4.5V, 11.5V 4.5V, 11.5V 4.5V, 10V 4.5V, 10V 4.5V, 11.5V - 4.5V, 10V
Rds On (Max) @ Id, Vgs 2mOhm @ 30A, 10V 3.5mOhm @ 30A, 10V 5.5mOhm @ 30A, 10V 3mOhm @ 30A, 10V 4mOhm @ 30A, 10V 5mOhm @ 30A, 10V 1.2mOhm @ 30A, 10V 2mOhm @ 30A, 10V 10.6mOhm @ 30A, 10V 1.9mOhm @ 30A, 10V 2.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.2V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 88 nC @ 11.5 V 52 nC @ 11.5 V 18 nC @ 4.5 V 48 nC @ 4.5 V 28 nC @ 4.5 V 22 nC @ 4.5 V 62.1 nC @ 4.5 V 88 nC @ 11.5 V 13 nC @ 11.5 V 150 nC @ 11.5 V 86 nC @ 11.5 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V - ±20V
Input Capacitance (Ciss) (Max) @ Vds 5600 pF @ 12 V 3100 pF @ 12 V 1588 pF @ 12 V 4500 pF @ 12 V 2677 pF @ 12 V 2048 pF @ 12 V 10930 pF @ 15 V 5600 pF @ 12 V 795 pF @ 15 V 7500 pF @ 12 V 5250 pF @ 12 V
FET Feature - - - - - - - - - - -
Power Dissipation (Max) 910mW (Ta), 125W (Tc) 890mW (Ta), 62.5W (Tc) 870mW (Ta), 41.7W (Tc) 900mW (Ta), 86.2W (Tc) 890mW (Ta), 55.6W (Tc) 880mW (Ta), 47.2W (Tc) 1.06W (Ta), 104W (Tc) 910mW (Ta), 125W (Tc) 860mW (Ta), 32.5W (Tc) - 900mW (Ta), 86.2W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) SO-8FL
Package / Case 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN

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