Overview
The IKW75N60TFKSA1 is a high-performance Insulated Gate Bipolar Transistor (IGBT) produced by Infineon Technologies. This device is part of the TRENCHSTOP™ IGBT3 family and is characterized by its high efficiency and robust performance. The IKW75N60TFKSA1 is a 600 V, 75 A IGBT discrete with an integrated anti-parallel diode, packaged in a TO-247-3 case. It combines the benefits of trench-cell and fieldstop technologies, resulting in significant improvements in both static and dynamic performance. This IGBT is designed to minimize switching and conduction losses, making it an ideal choice for high-power applications requiring high efficiency and reliability.
Key Specifications
| Parameter | Value |
|---|---|
| Collector-Emitter Voltage (VCEO) | 600 V |
| Max Collector Current | 75 A |
| Max Operating Temperature | 175 °C |
| Power Dissipation | 428 W |
| Package Type | TO-247-3 |
| Gate-Emitter Voltage | ±20 V |
| Pulsed Collector Current | 225 A |
| Gate Charge | 470 nC |
| Turn-on Time | 69 ns |
| Turn-off Time | 401 ns |
| Mounting Type | Through-Hole Technology (THT) |
Key Features
- Lowest VCEsat drop for lower conduction losses
- Low switching losses
- Easy parallel switching capability due to positive temperature coefficient in VCEsat
- Very soft, fast recovery anti-parallel Emitter Controlled diode
- High ruggedness and temperature stable behavior
- Low EMI emissions
- Low gate charge
- Tight parameter distribution
Applications
The IKW75N60TFKSA1 is suitable for a variety of high-power applications, including but not limited to:
- Industrial power supplies and inverters
- Motor drives and control systems
- Renewable energy systems such as solar and wind power inverters
- Electric vehicle charging stations and traction systems
- High-efficiency power conversion systems
Q & A
- What is the collector-emitter voltage rating of the IKW75N60TFKSA1?
The collector-emitter voltage (VCEO) is 600 V.
- What is the maximum collector current of the IKW75N60TFKSA1?
The maximum collector current is 75 A.
- What is the maximum operating temperature of the IKW75N60TFKSA1?
The maximum operating temperature is 175 °C.
- What type of package does the IKW75N60TFKSA1 come in?
The IKW75N60TFKSA1 is packaged in a TO-247-3 case.
- Does the IKW75N60TFKSA1 have an integrated anti-parallel diode?
- What are the turn-on and turn-off times of the IKW75N60TFKSA1?
The turn-on time is 69 ns, and the turn-off time is 401 ns.
- What is the gate charge of the IKW75N60TFKSA1?
The gate charge is 470 nC.
- What are the benefits of using the TRENCHSTOP™ IGBT3 technology in the IKW75N60TFKSA1?
The TRENCHSTOP™ IGBT3 technology offers lowest VCEsat drop, low switching losses, and high ruggedness, among other benefits).
- What types of applications is the IKW75N60TFKSA1 suitable for?
The IKW75N60TFKSA1 is suitable for high-power applications such as industrial power supplies, motor drives, renewable energy systems, and electric vehicle charging stations).
- What is the mounting type of the IKW75N60TFKSA1?
The mounting type is Through-Hole Technology (THT)).
