2N7002E,215
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Nexperia USA Inc. 2N7002E,215

Manufacturer No:
2N7002E,215
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 385MA TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The 2N7002,215 is a 60 V, 300 mA N-channel Trench MOSFET produced by Nexperia USA Inc. This component is packaged in a 3-pin SOT-23 or TO-236AB surface mount package, making it suitable for a variety of low voltage and low current applications. The MOSFET is known for its fast switching capabilities and is often used in logic level gate drive sources and other switching applications.

Key Specifications

ParameterValue
Channel TypeN Channel
Drain Source Voltage (Vds)60 V
Continuous Drain Current (Id)300 mA
On Resistance (Rds(on))2.8 ohm
Transistor Case StyleTO-236AB, SOT-23
Power Dissipation (Pd)830 mW
Gate Source Threshold Voltage Max2 V
No. of Pins3
Operating Temperature Max150°C
Transistor MountingSurface Mount
Moisture Sensitivity Level (MSL)MSL 1 - Unlimited

Key Features

  • Suitable for logic level gate drive sources
  • Very fast switching
  • Surface-mounted package (SOT-23 or TO-236AB)
  • Trench MOSFET technology

Applications

  • Logic level translators
  • High-speed line drivers
  • Small servo motor control
  • Power MOSFET gate drivers
  • Other switching applications

Q & A

  1. What is the maximum drain-source voltage of the 2N7002,215 MOSFET?
    The maximum drain-source voltage is 60 V.
  2. What is the continuous drain current of the 2N7002,215 MOSFET?
    The continuous drain current is 300 mA.
  3. What is the on-resistance (Rds(on)) of the 2N7002,215 MOSFET?
    The on-resistance (Rds(on)) is 2.8 ohm.
  4. In what package types is the 2N7002,215 MOSFET available?
    The MOSFET is available in TO-236AB and SOT-23 packages.
  5. What is the maximum operating temperature of the 2N7002,215 MOSFET?
    The maximum operating temperature is 150°C.
  6. Is the 2N7002,215 MOSFET RoHS compliant?
    Yes, the 2N7002,215 MOSFET is RoHS compliant.
  7. What is the power dissipation of the 2N7002,215 MOSFET?
    The power dissipation is 830 mW.
  8. What is the gate-source threshold voltage of the 2N7002,215 MOSFET?
    The gate-source threshold voltage is up to 2 V.
  9. What are some common applications of the 2N7002,215 MOSFET?
    Common applications include logic level translators, high-speed line drivers, small servo motor control, and power MOSFET gate drivers.
  10. What is the moisture sensitivity level (MSL) of the 2N7002,215 MOSFET?
    The MSL is MSL 1 - Unlimited.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:385mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.69 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):830mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number 2N7002E,215 2N7002P,215 2N7002F,215 2N7002K,215 2N7002T,215 2N7002,215
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. NXP USA Inc. NXP USA Inc. Nexperia USA Inc.
Product Status Obsolete Active Obsolete Obsolete Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 385mA (Ta) 360mA (Ta) 475mA (Ta) 340mA (Ta) 300mA (Ta) 300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 10V 4.5V, 10V 4.5V, 10V 5V, 10V 10V
Rds On (Max) @ Id, Vgs 3Ohm @ 500mA, 10V 1.6Ohm @ 500mA, 10V 2Ohm @ 500mA, 10V 3.9Ohm @ 500mA, 10V 5Ohm @ 500mA, 10V 5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.4V @ 250µA 2.5V @ 250µA 2V @ 1mA 2.5V @ 1mA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.69 nC @ 10 V 0.8 nC @ 4.5 V 0.69 nC @ 10 V - - -
Vgs (Max) ±30V ±20V ±30V ±15V ±20V ±30V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 10 V 50 pF @ 10 V 50 pF @ 10 V 40 pF @ 10 V 40 pF @ 10 V 50 pF @ 10 V
FET Feature - - - - - -
Power Dissipation (Max) 830mW (Ta) 350mW (Ta) 830mW (Ta) 830mW (Ta) 830mW (Ta) 830mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package TO-236AB TO-236AB TO-236AB SOT-23 (TO-236AB) SOT-23 (TO-236AB) TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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