NXP USA Inc. 2N7002K,215

Manufacturer No:: 2N7002K,215
Manufacturer:: NXP USA Inc.
Package:: Tape & Reel (TR)
Description:: MOSFET N-CH 60V 340MA TO236AB
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Product Introduction

Overview

The 2N7002K,215 is a small signal N-channel enhancement mode MOSFET produced by NXP USA Inc. This component is designed for high-efficiency power management and switching applications. It features a low on-state resistance, fast switching speed, and low input/output leakage, making it suitable for a variety of electronic systems.

Key Specifications

Parameter	Value	Unit
Drain-Source Voltage (V_DS)	60	V
Drain Current (I_D)	380	mA
On-Resistance (R_DS(ON))	2 Ω @ V_GS = 10V	Ω
Threshold Voltage (V_GS(TH))	1.0 - 2.5	V
Total Power Dissipation (P_D)	370 mW	mW
Junction to Ambient Thermal Resistance (R_θJA)	300 °C/W	°C/W
Operating Temperature Range	-55 to +150 °C	°C
Package Type	SOT-23

Key Features

Low On-Resistance (R_DS(ON))
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected up to 2kV
Totally Lead-Free & Fully RoHS Compliant
Halogen and Antimony Free (Green Device)

Applications

Low Side Load Switch
Level Shift Circuits
DC-DC Converters
Portable Applications (e.g., DSC, PDA, Cell Phone)
Motor Controls
Power Management Functions
Backlighting

Q & A

What is the maximum drain-source voltage of the 2N7002K,215 MOSFET?
The maximum drain-source voltage is 60V.
What is the typical on-resistance of the 2N7002K,215 at V_GS = 10V?
The typical on-resistance is 2 Ω.
What is the maximum drain current of the 2N7002K,215?
The maximum drain current is 380 mA.
Is the 2N7002K,215 ESD protected?
Yes, it is ESD protected up to 2kV.
What is the operating temperature range of the 2N7002K,215?
The operating temperature range is -55 to +150 °C.
What type of package does the 2N7002K,215 come in?
The 2N7002K,215 comes in a SOT-23 package.
Is the 2N7002K,215 RoHS compliant?
Yes, it is fully RoHS compliant and lead-free.
What are some common applications for the 2N7002K,215?
Common applications include low side load switches, level shift circuits, DC-DC converters, and portable electronics.
What is the total power dissipation of the 2N7002K,215?
The total power dissipation is 370 mW.
What is the junction to ambient thermal resistance of the 2N7002K,215?
The junction to ambient thermal resistance is 300 °C/W.

In Stock

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Quantity: 511

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Part Number	2N7002K,215	2N7002P,215	2N7002T,215	2N7002,215	2N7002BK,215	2N7002CK,215	2N7002E,215	2N7002F,215
Manufacturer	NXP USA Inc.	Nexperia USA Inc.	NXP USA Inc.	Nexperia USA Inc.	Nexperia USA Inc.	Nexperia USA Inc.	Nexperia USA Inc.	Nexperia USA Inc.
Product Status	Obsolete	Active	Obsolete	Active	Active	Obsolete	Obsolete	Obsolete
FET Type	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V	60 V	60 V	60 V	60 V	60 V	60 V	60 V
Current - Continuous Drain (Id) @ 25°C	340mA (Ta)	360mA (Ta)	300mA (Ta)	300mA (Ta)	350mA (Ta)	300mA (Ta)	385mA (Ta)	475mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V	10V	5V, 10V	10V	10V	10V	4.5V, 10V	4.5V, 10V
Rds On (Max) @ Id, Vgs	3.9Ohm @ 500mA, 10V	1.6Ohm @ 500mA, 10V	5Ohm @ 500mA, 10V	5Ohm @ 500mA, 10V	1.6Ohm @ 500mA, 10V	1.6Ohm @ 500mA, 10V	3Ohm @ 500mA, 10V	2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id	2V @ 1mA	2.4V @ 250µA	2.5V @ 1mA	2.5V @ 250µA	2.1V @ 250µA	2.5V @ 250µA	2.5V @ 250µA	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	-	0.8 nC @ 4.5 V	-	-	0.6 nC @ 4.5 V	1.3 nC @ 4.5 V	0.69 nC @ 10 V	0.69 nC @ 10 V
Vgs (Max)	±15V	±20V	±20V	±30V	±20V	±20V	±30V	±30V
Input Capacitance (Ciss) (Max) @ Vds	40 pF @ 10 V	50 pF @ 10 V	40 pF @ 10 V	50 pF @ 10 V	50 pF @ 10 V	55 pF @ 25 V	50 pF @ 10 V	50 pF @ 10 V
FET Feature	-	-	-	-	-	-	-	-
Power Dissipation (Max)	830mW (Ta)	350mW (Ta)	830mW (Ta)	830mW (Ta)	370mW (Ta)	350mW (Ta)	830mW (Ta)	830mW (Ta)
Operating Temperature	-65°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-65°C ~ 150°C (TJ)	150°C (TJ)	150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Supplier Device Package	SOT-23 (TO-236AB)	TO-236AB	SOT-23 (TO-236AB)	TO-236AB	TO-236AB	TO-236AB	TO-236AB	TO-236AB
Package / Case	TO-236-3, SC-59, SOT-23-3	TO-236-3, SC-59, SOT-23-3	TO-236-3, SC-59, SOT-23-3	TO-236-3, SC-59, SOT-23-3	TO-236-3, SC-59, SOT-23-3	TO-236-3, SC-59, SOT-23-3	TO-236-3, SC-59, SOT-23-3	TO-236-3, SC-59, SOT-23-3

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	60 V
Current - Continuous Drain (Id) @ 25°C:	340mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	3.9Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:	2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	-
Vgs (Max):	±15V
Input Capacitance (Ciss) (Max) @ Vds:	40 pF @ 10 V
FET Feature:	-
Power Dissipation (Max):	830mW (Ta)
Operating Temperature:	-65°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	SOT-23 (TO-236AB)
Package / Case:	TO-236-3, SC-59, SOT-23-3

NXP USA Inc. 2N7002K,215

Product Introduction

Overview

Key Specifications

Key Features

Applications

Q & A

Product Attributes

In Stock

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