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2N7002BK,215
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Nexperia USA Inc. 2N7002BK,215

Manufacturer No:
2N7002BK,215
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 350MA TO236AB
Delivery:
Payment:
iso14001
iso45001
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Product Introduction

Overview

The 2N7002BK,215 is a 60 V, 350 mA N-channel Trench MOSFET produced by Nexperia USA Inc. This component is designed in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package, utilizing Trench MOSFET technology. It is known for its logic-level compatibility, very fast switching capabilities, and robust ESD protection up to 2 kV. The 2N7002BK is AEC-Q101 qualified, making it suitable for automotive and other demanding applications.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 60 V
ID (Drain Current) 350 mA
VGS(th) (Gate-Source Threshold Voltage) 1.1 - 2.1 V
RDS(on) (Drain-Source On-Resistance) 1.6 Ω
PD (Power Dissipation) 0.37 W
Package SOT23 (TO-236AB)
ESD Protection Up to 2 kV
AEC-Q101 Qualification Yes

Key Features

  • Logic-level compatible
  • Very fast switching
  • Trench MOSFET technology for enhanced performance
  • ESD protection up to 2 kV for robust reliability
  • AEC-Q101 qualified for automotive and other demanding applications

Applications

  • Relay driver
  • High-speed line driver
  • Low-side load switch
  • Switching circuits
  • Automotive and industrial applications
  • Power, computing, consumer, mobile, and wearable devices

Q & A

  1. What is the maximum drain-source voltage of the 2N7002BK,215?

    The maximum drain-source voltage (VDS) is 60 V.

  2. What is the typical drain current of the 2N7002BK,215?

    The typical drain current (ID) is 350 mA.

  3. What is the gate-source threshold voltage range of the 2N7002BK,215?

    The gate-source threshold voltage (VGS(th)) range is 1.1 to 2.1 V.

  4. What is the on-resistance of the 2N7002BK,215?

    The drain-source on-resistance (RDS(on)) is 1.6 Ω.

  5. What is the maximum power dissipation of the 2N7002BK,215?

    The maximum power dissipation (PD) is 0.37 W.

  6. What package type is the 2N7002BK,215 available in?

    The component is available in the SOT23 (TO-236AB) package.

  7. Does the 2N7002BK,215 have ESD protection?

    Yes, it has ESD protection up to 2 kV.

  8. Is the 2N7002BK,215 AEC-Q101 qualified?

    Yes, it is AEC-Q101 qualified.

  9. What are some common applications of the 2N7002BK,215?

    Common applications include relay drivers, high-speed line drivers, low-side load switches, and switching circuits, as well as automotive and industrial applications.

  10. Is the 2N7002BK,215 RoHS compliant?

    Yes, the component is compliant with the EU RoHS directive.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:350mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.6 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):370mW (Ta)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
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In Stock

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Same Series
2N7002BK,215
2N7002BK,215
MOSFET N-CH 60V 350MA TO236AB

Similar Products

Part Number 2N7002BK,215 2N7002CK,215 2N7002K,215
Manufacturer Nexperia USA Inc. Nexperia USA Inc. NXP USA Inc.
Product Status Active Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 350mA (Ta) 300mA (Ta) 340mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.6Ohm @ 500mA, 10V 1.6Ohm @ 500mA, 10V 3.9Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.1V @ 250µA 2.5V @ 250µA 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 0.6 nC @ 4.5 V 1.3 nC @ 4.5 V -
Vgs (Max) ±20V ±20V ±15V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 10 V 55 pF @ 25 V 40 pF @ 10 V
FET Feature - - -
Power Dissipation (Max) 370mW (Ta) 350mW (Ta) 830mW (Ta)
Operating Temperature 150°C (TJ) 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package TO-236AB TO-236AB SOT-23 (TO-236AB)
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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