2N7002,215
  • Share:

Nexperia USA Inc. 2N7002,215

Manufacturer No:
2N7002,215
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 300MA TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002,215 is an N-Channel MOSFET produced by Nexperia USA Inc. This device is part of the TrenchMOS family, known for its high performance and reliability. It features a drain-source voltage (Vdss) of 60V and a continuous drain current (ID) of 300mA, making it suitable for a variety of applications requiring low power consumption and high efficiency.

The MOSFET is available in several package types, including TO-236-3, SC-59, and SOT-23-3, which are all surface mount packages. This versatility in packaging allows for easy integration into different design layouts and applications.

The 2N7002,215 is also compliant with various environmental and safety standards, including RoHS, REACH, and ELV, ensuring it meets the regulatory requirements for use in electronic equipment.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (Vdss) 60 V
Continuous Drain Current (ID) 300 mA
On-State Resistance (Rds(on)) @ Vgs = 10V 5 Ω
Power Dissipation (Pd) 830 mW
Package Types TO-236-3, SC-59, SOT-23-3
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Pins 3

Key Features

  • High Efficiency: The 2N7002,215 offers low on-state resistance, which helps in reducing power losses and improving overall system efficiency.
  • Compact Packaging: Available in TO-236-3, SC-59, and SOT-23-3 packages, making it suitable for space-constrained designs.
  • Environmental Compliance: Compliant with RoHS, REACH, and ELV directives, ensuring it meets environmental and safety standards.
  • Reliability: Part of the TrenchMOS family, known for its high reliability and performance in various applications.
  • Low Power Consumption: Designed for low power applications with a continuous drain current of 300mA and a power dissipation of 830mW.

Applications

  • General Purpose Switching: Suitable for general-purpose switching applications due to its high efficiency and low power consumption.
  • Power Management: Used in power management circuits where low on-state resistance and high reliability are crucial.
  • Automotive Systems: Can be used in automotive systems due to its compliance with automotive standards and robust performance.
  • Consumer Electronics: Ideal for use in consumer electronics such as smartphones, tablets, and other portable devices.
  • Industrial Control Systems: Suitable for industrial control systems requiring reliable and efficient switching solutions.

Q & A

  1. What is the drain-source voltage (Vdss) of the 2N7002,215?

    The drain-source voltage (Vdss) of the 2N7002,215 is 60V.

  2. What is the continuous drain current (ID) of the 2N7002,215?

    The continuous drain current (ID) of the 2N7002,215 is 300mA.

  3. What are the available package types for the 2N7002,215?

    The 2N7002,215 is available in TO-236-3, SC-59, and SOT-23-3 packages.

  4. Is the 2N7002,215 RoHS compliant?

    Yes, the 2N7002,215 is RoHS compliant.

  5. What is the on-state resistance (Rds(on)) of the 2N7002,215 at Vgs = 10V?

    The on-state resistance (Rds(on)) of the 2N7002,215 at Vgs = 10V is 5Ω.

  6. What is the power dissipation (Pd) of the 2N7002,215?

    The power dissipation (Pd) of the 2N7002,215 is 830mW.

  7. What is the moisture sensitivity level (MSL) of the 2N7002,215?

    The moisture sensitivity level (MSL) of the 2N7002,215 is 1 (Unlimited).

  8. In which applications is the 2N7002,215 commonly used?

    The 2N7002,215 is commonly used in general-purpose switching, power management, automotive systems, consumer electronics, and industrial control systems.

  9. Is the 2N7002,215 suitable for high-frequency applications?

    The 2N7002,215 is primarily designed for low-frequency and general-purpose switching applications rather than high-frequency applications.

  10. What are the environmental compliance standards met by the 2N7002,215?

    The 2N7002,215 is compliant with RoHS, REACH, and ELV directives.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):830mW (Ta)
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.31
2,650

Please send RFQ , we will respond immediately.

Same Series
2N7002,215
2N7002,215
MOSFET N-CH 60V 300MA TO236AB

Similar Products

Part Number 2N7002,215 2N7002P,215 2N7002,235 2N7002E,215 2N7002F,215 2N7002K,215 2N7002T,215
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Active Active Active Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V 60 V 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 300mA (Ta) 360mA (Ta) 300mA (Tc) 385mA (Ta) 475mA (Ta) 340mA (Ta) 300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 5V, 10V
Rds On (Max) @ Id, Vgs 5Ohm @ 500mA, 10V 1.6Ohm @ 500mA, 10V 5Ohm @ 500mA, 10V 3Ohm @ 500mA, 10V 2Ohm @ 500mA, 10V 3.9Ohm @ 500mA, 10V 5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.4V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2V @ 1mA 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - 0.8 nC @ 4.5 V - 0.69 nC @ 10 V 0.69 nC @ 10 V - -
Vgs (Max) ±30V ±20V ±30V ±30V ±30V ±15V ±20V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 10 V 50 pF @ 10 V 50 pF @ 10 V 50 pF @ 10 V 50 pF @ 10 V 40 pF @ 10 V 40 pF @ 10 V
FET Feature - - - - - - -
Power Dissipation (Max) 830mW (Ta) 350mW (Ta) 830mW (Tc) 830mW (Ta) 830mW (Ta) 830mW (Ta) 830mW (Ta)
Operating Temperature -65°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package TO-236AB TO-236AB TO-236AB TO-236AB TO-236AB SOT-23 (TO-236AB) SOT-23 (TO-236AB)
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

STP5NK60Z
STP5NK60Z
STMicroelectronics
MOSFET N-CH 600V 5A TO220AB
NTHD3101FT1G
NTHD3101FT1G
onsemi
MOSFET P-CH 20V 3.2A CHIPFET
FDMC2523P
FDMC2523P
onsemi
MOSFET P-CH 150V 3A 8MLP
FQT7N10LTF
FQT7N10LTF
onsemi
MOSFET N-CH 100V 1.7A SOT223-4
NTR3C21NZT1G
NTR3C21NZT1G
onsemi
MOSFET N-CH 20V 3.6A SOT23-3
STP8N120K5
STP8N120K5
STMicroelectronics
MOSFET N-CH 1200V 6A TO220
FCD3400N80Z
FCD3400N80Z
onsemi
MOSFET N-CH 800V 2A DPAK
NTMFS5C468NLT1G
NTMFS5C468NLT1G
onsemi
MOSFET N-CH 40V 5DFN
NTMFS4C03NT1G
NTMFS4C03NT1G
onsemi
MOSFET N-CH 30V 30A/136A 5DFN
NTMFS002P03P8ZT1G
NTMFS002P03P8ZT1G
onsemi
MOSFET, POWER -30V P-CHANNEL, SO
NTMFS5C612NLT1G
NTMFS5C612NLT1G
onsemi
MOSFET N-CH 60V 36A/235A 5DFN
STW15NB50
STW15NB50
STMicroelectronics
MOSFET N-CH 500V 14.6A TO247-3

Related Product By Brand

BAV70,235
BAV70,235
Nexperia USA Inc.
DIODE ARRAY GP 100V 215MA SOT23
BC807-25QCZ
BC807-25QCZ
Nexperia USA Inc.
TRANS 45V 0.5A DFN1412D-3
BC846BM,315
BC846BM,315
Nexperia USA Inc.
TRANS NPN 65V 0.1A DFN1006B-3
BCP52-10TF
BCP52-10TF
Nexperia USA Inc.
BCP52-10T/SOT223/SC-73
BCP56-QF
BCP56-QF
Nexperia USA Inc.
TRANS NPN 80V 1A SOT223
PDTC144WU,115
PDTC144WU,115
Nexperia USA Inc.
TRANS PREBIAS NPN 50V SOT323
PMZ600UNEZ
PMZ600UNEZ
Nexperia USA Inc.
MOSFET N-CH 20V 600MA DFN1006-3
74HC4050D,652
74HC4050D,652
Nexperia USA Inc.
IC BUFFER NON-INVERT 6V 16SO
74LVC1G125GV-Q100,
74LVC1G125GV-Q100,
Nexperia USA Inc.
IC BUFFER NON-INVERT 5.5V SC74A
74HC4050DB,118
74HC4050DB,118
Nexperia USA Inc.
IC BUFFER NON-INVERT 6V 16SSOP
74LVCH8T245BQ118
74LVCH8T245BQ118
Nexperia USA Inc.
IC TRANSLATR TXRX 5.5V 24DHVQFN
74HCT14D-Q100,118
74HCT14D-Q100,118
Nexperia USA Inc.
IC INVERT SCHMITT 6CH 1-INP 14SO