Overview
The 2N7002,235 from Nexperia USA Inc. is a 60V, 300mA N-channel Trench MOSFET. This Field-Effect Transistor (FET) is designed using Trench MOSFET technology and is encapsulated in a compact SOT23 plastic surface-mount package. The 2N7002,235 is optimized for high-speed switching applications and offers enhanced performance, reliability, and durability. It is particularly suited for logic-level gate drive, making it compatible with low voltage levels commonly found in digital circuits.
The use of Trench MOSFET technology reduces on-state resistance and improves switching speed, making this component ideal for applications requiring fast switching and low power loss. The compact SOT23 package facilitates efficient use of space in PCB designs, making it a versatile choice for a wide range of electronic designs.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Type Number | 2N7002 | - |
| Orderable Part Number | 2N7002,235 | - |
| Package | SOT23 (TO-236AB) | - |
| Voltage (Vds) | 60 | V |
| Current (Id) | 300 | mA |
| Power Dissipation (Ptot) | 0.83 | W |
| Switching Speed | Rapid | - |
| Gate Drive | Logic Level | - |
| Compliance | RoHS, REACH, CN RoHS compliant | - |
Key Features
- Trench MOSFET Technology: Enhances performance by reducing on-state resistance and improving switching speed.
- Logic Level Gate Drive: Compatible with low voltage levels found in digital circuits, making it suitable for interfacing with microcontrollers and other digital logic circuits.
- Compact SOT23 Package: Facilitates efficient use of space in PCB designs.
- High-Speed Switching: Ideal for applications requiring fast switching and low power loss.
- Reliability and Durability: Designed to offer high reliability and durability over time.
Applications
- High-Speed Switching Circuits: Suitable for applications that require rapid switching, such as power management, motor control, and high-frequency switching circuits.
- Digital Logic Circuits: Compatible with microcontrollers and other digital logic circuits due to its logic-level gate drive capability.
- Amplifiers and Oscillators: Can be used in various amplifier and oscillator circuits where fast switching and low power loss are critical.
- Compact Electronic Devices: The compact SOT23 package makes it ideal for use in space-constrained electronic devices.
Q & A
- What is the voltage rating of the 2N7002,235 MOSFET?
The voltage rating (Vds) of the 2N7002,235 MOSFET is 60V.
- What is the current rating of the 2N7002,235 MOSFET?
The current rating (Id) of the 2N7002,235 MOSFET is 300mA.
- What type of package does the 2N7002,235 come in?
The 2N7002,235 comes in a SOT23 (TO-236AB) package.
- Is the 2N7002,235 compatible with logic-level gate drive?
Yes, the 2N7002,235 is compatible with logic-level gate drive, making it suitable for interfacing with microcontrollers and other digital logic circuits.
- What technology is used in the 2N7002,235 MOSFET?
The 2N7002,235 uses Trench MOSFET technology.
- What are the compliance standards for the 2N7002,235?
The 2N7002,235 is compliant with RoHS, REACH, and CN RoHS standards.
- What are some typical applications for the 2N7002,235?
Typical applications include high-speed switching circuits, digital logic circuits, amplifiers, oscillators, and compact electronic devices.
- How does the Trench MOSFET technology benefit the 2N7002,235?
The Trench MOSFET technology reduces on-state resistance and improves switching speed, enhancing the overall performance of the device.
- What is the power dissipation rating of the 2N7002,235?
The power dissipation rating (Ptot) of the 2N7002,235 is 0.83W.
- Is the 2N7002,235 suitable for high-frequency applications?
Yes, the 2N7002,235 is suitable for high-frequency applications due to its rapid switching capabilities.
