STP30NF20
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STMicroelectronics STP30NF20

Manufacturer No:
STP30NF20
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 200V 30A TO220AB
Delivery:
Payment:
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Product Introduction

Overview

The STP30NF20 is a high-performance N-channel Power MOSFET developed by STMicroelectronics. This device is part of the STripFET™ series, which is designed to minimize input capacitance and gate charge, making it highly suitable for advanced high-efficiency isolated DC-DC converters and other switching applications. The STP30NF20 is available in TO-220, TO-247, and D²PAK packages, offering flexibility in design and implementation.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDS) 200 V
Gate-Source Voltage (VGS) ±20 V
Continuous Drain Current (ID) at TC = 25°C 30 A
Continuous Drain Current (ID) at TC = 100°C 19 A
Pulsed Drain Current (IDM) 120 A
Total Dissipation at TC = 25°C (PTOT) 125 W
Static Drain-Source On Resistance (RDS(on)) 0.075
Gate Threshold Voltage (VGS(th)) 2 - 4 V
Total Gate Charge (Qg) 38 nC
Thermal Resistance Junction-Case (RthJC) 1 °C/W
Thermal Resistance Junction-Ambient (RthJA) 62.5 (TO-220/D²PAK), 50 (TO-247) °C/W

Key Features

  • Minimized input capacitance and gate charge through STMicroelectronics' unique STripFET process.
  • Excellent figure of merit (RDS*Qg) for high efficiency.
  • 100% avalanche tested for reliability.
  • Very low intrinsic capacitances.
  • Good manufacturing repeatability.
  • Available in TO-220, TO-247, and D²PAK packages for various design needs.

Applications

  • Primary switch in advanced high-efficiency isolated DC-DC converters.
  • Switching applications requiring low input capacitance and gate charge.
  • Power management systems in industrial, automotive, and consumer electronics.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STP30NF20?

    The maximum drain-source voltage (VDS) is 200 V.

  2. What are the continuous drain current ratings at 25°C and 100°C?

    The continuous drain current ratings are 30 A at 25°C and 19 A at 100°C.

  3. What is the typical static drain-source on resistance (RDS(on))?

    The typical static drain-source on resistance (RDS(on)) is 0.075 Ω.

  4. What is the gate threshold voltage range?

    The gate threshold voltage range is 2 to 4 V.

  5. What are the thermal resistance values for junction-case and junction-ambient?

    The thermal resistance junction-case (RthJC) is 1 °C/W, and the thermal resistance junction-ambient (RthJA) is 62.5 °C/W for TO-220/D²PAK and 50 °C/W for TO-247.

  6. What is the total gate charge (Qg) of the STP30NF20?

    The total gate charge (Qg) is 38 nC.

  7. In what packages is the STP30NF20 available?

    The STP30NF20 is available in TO-220, TO-247, and D²PAK packages.

  8. What are some typical applications of the STP30NF20?

    Typical applications include primary switches in high-efficiency isolated DC-DC converters and other switching applications requiring low input capacitance and gate charge.

  9. Is the STP30NF20 100% avalanche tested?
  10. What is the maximum lead temperature for soldering purposes?

    The maximum lead temperature for soldering purposes is 300 °C.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:30A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:75mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:38 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1597 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):125W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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Same Series
STB30NF20
STB30NF20
MOSFET N-CH 200V 30A D2PAK
STW30NF20
STW30NF20
MOSFET N-CH 200V 30A TO247-3

Similar Products

Part Number STP30NF20 STP40NF20 STP20NF20 STP30N20 STP30NF10
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 200 V 200 V 200 V 100 V
Current - Continuous Drain (Id) @ 25°C 30A (Tc) 40A (Tc) 18A (Tc) 30A (Tc) 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V - 10V
Rds On (Max) @ Id, Vgs 75mOhm @ 15A, 10V 45mOhm @ 20A, 10V 125mOhm @ 10A, 10V 75mOhm @ 15A, 10V 45mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 38 nC @ 10 V 75 nC @ 10 V 39 nC @ 10 V 38 nC @ 10 V 55 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V - ±20V
Input Capacitance (Ciss) (Max) @ Vds 1597 pF @ 25 V 2500 pF @ 25 V 940 pF @ 25 V 1597 pF @ 25 V 1180 pF @ 25 V
FET Feature - - - - -
Power Dissipation (Max) 125W (Tc) 160W (Tc) 110W (Tc) 125W (Tc) 115W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220 TO-220 TO-220 TO-220 TO-220
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

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