Overview
The STB30NF10T4 is a high-performance N-channel Power MOSFET developed by STMicroelectronics. This device is part of the StripFET™ II series, which utilizes STMicroelectronics' unique 'Single Feature Size™' strip-based process. This technology enhances the transistor's packing density, resulting in low on-resistance, rugged avalanche characteristics, and improved manufacturing reproducibility.
The STB30NF10T4 is available in a D2PAK package and is designed for high-power switching applications. It features exceptional dv/dt capability, 100% avalanche testing, and application-oriented characterization, making it suitable for a variety of power management and switching roles.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 100 | V |
| Drain Current (continuous) at TC = 25°C | 35 | A |
| Drain Current (continuous) at TC = 100°C | 25 | A |
| Pulsed Drain Current (IDM) | 140 | A |
| Gate-Source Voltage (VGS) | ±20 | V |
| Static Drain-Source On Resistance (RDS(on)) | < 0.045 | Ω |
| Thermal Resistance Junction-Case (Rthj-case) | 1.30 | °C/W |
| Maximum Junction Temperature (Tj) | 175 | °C |
| Storage Temperature (Tstg) | -55 to 175 | °C |
Key Features
- Exceptional dv/dt capability, ensuring robust performance in high-frequency switching applications.
- 100% avalanche tested, providing reliability and durability under extreme conditions.
- Low on-resistance (RDS(on) < 0.045 Ω), minimizing power losses and enhancing efficiency.
- High packing density due to the 'Single Feature Size™' strip-based process, leading to improved thermal and electrical performance.
- Rugged avalanche characteristics, making the device suitable for applications requiring high reliability and fault tolerance.
- Low gate charge, facilitating faster switching times and reduced power consumption.
Applications
- Switching power supplies and DC-DC converters.
- Motor control and drive systems.
- Power factor correction (PFC) circuits.
- High-frequency inverters and converters.
- General-purpose power switching in industrial and consumer electronics.
Q & A
- What is the maximum drain-source voltage (VDS) of the STB30NF10T4?
The maximum drain-source voltage (VDS) is 100 V.
- What is the continuous drain current at 25°C and 100°C?
The continuous drain current is 35 A at 25°C and 25 A at 100°C.
- What is the typical on-resistance (RDS(on)) of the STB30NF10T4?
The typical on-resistance (RDS(on)) is less than 0.045 Ω.
- What is the maximum junction temperature (Tj) for the STB30NF10T4?
The maximum junction temperature (Tj) is 175°C.
- What are the key features of the 'Single Feature Size™' strip-based process used in the STB30NF10T4?
The 'Single Feature Size™' strip-based process enhances packing density, reduces on-resistance, and improves avalanche characteristics and manufacturing reproducibility.
- What types of applications is the STB30NF10T4 suitable for?
The STB30NF10T4 is suitable for switching power supplies, motor control, power factor correction, high-frequency inverters, and general-purpose power switching.
- What is the thermal resistance junction-case (Rthj-case) of the STB30NF10T4 in a D2PAK package?
The thermal resistance junction-case (Rthj-case) is 1.30 °C/W.
- What is the gate-source voltage (VGS) range for the STB30NF10T4?
The gate-source voltage (VGS) range is ±20 V.
- What is the maximum pulsed drain current (IDM) for the STB30NF10T4?
The maximum pulsed drain current (IDM) is 140 A.
- Is the STB30NF10T4 available in lead-free packaging?
Yes, the STB30NF10T4 is available in ECOPACK® lead-free packages.
